公开(公告)号：US6008509A

公开(公告)日：1999-12-28

申请号：US998248

申请日：1997-12-24

申请人： Makoto Inai ,  Hiroyuki Seto ,  Fujio Okui ,  Susumu Fukuda ,  Hisashi Ariyoshi

发明人： Makoto Inai ,  Hiroyuki Seto ,  Fujio Okui ,  Susumu Fukuda ,  Hisashi Ariyoshi

IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/778 ,  H01L29/80 ,  H01L29/772

CPC分类号： H01L29/802

摘要： A heterostructure insulated-gate field effect transistor comprises a channel layer, barrier layer and a contact layer. The barrier layer is made of a material having an electron affinity smaller than that of the channel layer and equal to that of the contact layer. Due to the single heterostructure, the series resistance between the channel layer and the source (drain) electrode can be decreased without employing complicated selective ion implanting or selective epitaxial growing method.

摘要翻译： 异质结构绝缘栅场效应晶体管包括沟道层，势垒层和接触层。 阻挡层由电子亲和力小于沟道层的电子亲和力的材料制成，并且等于接触层的电子亲和力。 由于单异质结构，可以减少沟道层和源极（漏极）之间的串联电阻，而不需要采用复杂的选择性离子注入或选择性外延生长法。