公开(公告)号：US11837437B2

公开(公告)日：2023-12-05

申请号：US17832001

申请日：2022-06-03

Applicant: JEOL Ltd.

Inventor： Tatsuhito Kimura ,  Munehiro Kozuka ,  Tsutomu Negishi ,  Hisashi Kawahara

IPC: H01J37/304 ,  H01J37/08 ,  H01J37/20 ,  H01J37/22

CPC classification number: H01J37/304 ,  H01J37/08 ,  H01J37/20 ,  H01J37/222 ,  H01J2237/002 ,  H01J2237/026 ,  H01J2237/20207 ,  H01J2237/30405 ,  H01J2237/30472

Abstract: A specimen machining device for machining a specimen by irradiating the specimen with an ion beam includes an ion source for irradiating the specimen with the ion beam, a specimen stage for holding the specimen, a camera for photographing the specimen, an information provision unit for providing information indicating an expected machining completion time, and a storage unit for storing past machining information. The information provision unit performs processing for calculating the expected machining completion time based on the past machining information, processing for acquiring an image photographed by the camera, processing for calculating a machining speed based on the acquired image, and processing for updating the expected machining completion time based on the machining speed.

公开(公告)号：US20180308660A1

公开(公告)日：2018-10-25

申请号：US15768486

申请日：2016-10-13

Applicant: ALD Vacuum Technologies GmbH

Inventor： Georg REITER ,  Matthias WAELZLEIN

IPC: H01J37/305 ,  H01J37/30

CPC classification number: H01J37/3053 ,  H01J37/3005 ,  H01J2237/2482 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/3132

Abstract: In order to evaporate material, an electronic beam is guided over a melt surface in a periodic pattern by a detecting unit. Whether or not the actual pattern matches the target pattern specified by the deflecting unit is detected in principle on an image of the melt surface. In order to allow a better analysis of the image, the periodicity of the deflection pattern during the analysis of temporally successive images is taken into consideration.

公开(公告)号：US20180211808A1

公开(公告)日：2018-07-26

申请号：US15936966

申请日：2018-03-27

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Bon-Woong Koo ,  Jun Lu ,  Frank Sinclair ,  Eric D. Hermanson ,  Joseph E. Pierro ,  Michael D. Johnson ,  Michael S. DeLucia ,  Antonella Cucchetti

IPC: H01J27/20 ,  H01J37/317 ,  H01J27/02 ,  H01J1/50 ,  H01J27/08

CPC classification number: H01J37/3171 ,  H01J1/50 ,  H01J27/08 ,  H01J37/08 ,  H01J2237/24542 ,  H01J2237/30472

Abstract: An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

公开(公告)号：US20180090299A1

公开(公告)日：2018-03-29

申请号：US15717139

申请日：2017-09-27

Applicant: NuFlare Technology, Inc.

Inventor： Noriaki Nakayamada

IPC: H01J37/317 ,  H01J37/302

CPC classification number: H01J37/3174 ,  H01J37/3026 ,  H01J2237/3045 ,  H01J2237/30461 ,  H01J2237/30472 ,  H01J2237/31774 ,  H01J2237/31776

Abstract: According to one aspect of the present invention, a charged particle beam apparatus includes fogging charged particle amount distribution operation processing circuitry that operates a fogging charged particle amount distribution by performing convolution integration of a distribution function in which a design distribution center of fogging charged particles is shifted and a exposure intensity distribution in which a design irradiation center of a charged particle beam is not shifted; positional displacement operation processing circuitry that operates a positional displacement based on the fogging charged particle amount distribution; correction processing circuitry that corrects an irradiation position using the positional displacement; and a charged particle beam column including an emission source that emits the charged particle beam and a deflector that deflects the charged particle beam to irradiate a corrected irradiation position with the charged particle beam.

公开(公告)号：US09734982B1

公开(公告)日：2017-08-15

申请号：US15162929

申请日：2016-05-24

Applicant: Nissin Ion Equipment Co., Ltd.

Inventor： Sami K. Hahto ,  Tetsuro Yamamoto

IPC: H01J37/302 ,  C23C14/48 ,  G21K5/00 ,  H01J37/147 ,  C23C14/54 ,  H01J37/317

CPC classification number: H01J37/1472 ,  C23C14/48 ,  C23C14/54 ,  G21K5/00 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/1504 ,  H01J2237/30472 ,  H01J2237/31701

Abstract: A beam current density distribution adjustment device is provided. The device includes member pairs in a long side direction of a ribbon beam, the member pairs adjusting a beam current density distribution in the long side direction of the ribbon beam by using an electric field or a magnetic field, members of each of the member pairs being disposed with the ribbon beam in-between the members. Opposing surfaces of the member pairs adjacent to each other in the long side direction of the ribbon beam are partially not parallel to a traveling direction of the ribbon beam.

公开(公告)号：US20170062181A1

公开(公告)日：2017-03-02

申请号：US15351882

申请日：2016-11-15

Applicant: Lam Research Corporation

Inventor： Ivan L. Berry, III ,  Thorsten Lill

IPC: H01J37/302 ,  H01L29/06 ,  H01L29/423 ,  H01J37/305 ,  H01L29/786 ,  H01L21/67 ,  H01J37/32 ,  H01L21/3065 ,  H01L29/66

CPC classification number: H01J37/3023 ,  H01J37/3056 ,  H01J37/32422 ,  H01J37/32752 ,  H01J2237/202 ,  H01J2237/30472 ,  H01J2237/3151 ,  H01J2237/3174 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3083 ,  H01L21/67069 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/775 ,  H01L29/786 ,  H01L29/78654 ,  H01L29/78696

Abstract: Various embodiments herein relate to methods and apparatus for performing anisotropic ion beam etching to form arrays of channels. The channels may be formed in semiconductor material, and may be used in a gate-all-around device. Generally speaking, a patterned mask layer is provided over a layer of semiconductor material. Ions are directed toward the substrate while the substrate is positioned in two particular orientations with respect to the ion trajectory. The substrate switches between these orientations such that ions impinge upon the substrate from two opposite angles. The patterned mask layer shadows/protects the underlying semiconductor material such that the channels are formed in intersecting shadowed regions.

Abstract translation: 本文的各种实施例涉及用于进行各向异性离子束蚀刻以形成通道阵列的方法和装置。 通道可以形成在半导体材料中，并且可以用在栅极全能器件中。 一般来说，在半导体材料层上提供图案化掩模层。 当衬底相对于离子轨迹定位在两个特定取向中时，离子指向衬底。 衬底在这些取向之间切换，使得离子从两个相反的角度冲击衬底。 图案化掩模层阴影/保护下面的半导体材料，使得沟道形成在相交的阴影区域中。

公开(公告)号：US20170002467A1

公开(公告)日：2017-01-05

申请号：US15201590

申请日：2016-07-04

Applicant: FEI Company

Inventor： Marcus Straw ,  Chad Rue ,  Steven Randolph ,  Aurelien Philippe Jean Maclou Botman ,  Clive D. Chandler ,  Mark W. Utlaut

IPC: C23C16/48 ,  C23C16/56 ,  C23C16/52

CPC classification number: C23C16/52 ,  C23C16/047 ,  C23C16/4418 ,  H01J37/3023 ,  H01J37/3026 ,  H01J37/304 ,  H01J37/317 ,  H01J37/3178 ,  H01J2237/30416 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31735 ,  H01J2237/31749

Abstract: An improved process control for a charged beam system is provided that allows the capability of accurately producing complex two and three dimensional structures from a computer generated model in a material deposition process. The process control actively monitors the material deposition process and makes corrective adjustments as necessary to produce a pattern or structure that is within an acceptable tolerance range with little or no user intervention. The process control includes a data base containing information directed to properties of a specific pattern or structure and uses an algorithm to instruct the beam system during the material deposition process. Feedback through various means such as image recognition, chamber pressure readings, and EDS signal can be used to instruct the system to make automatic system modifications, such as, beam and gas parameters, or other modifications to the pattern during a material deposition run.

Abstract translation: 提供了一种用于带电束系统的改进的过程控制，其允许在材料沉积过程中从计算机生成的模型精确地产生复杂的二维和三维结构的能力。 过程控制主动监测材料沉积过程，并根据需要进行校正调整，以产生在可接受的公差范围内，甚至无需用户干预的图案或结构。 过程控制包括包含针对特定模式或结构的属性的信息的数据库，并且使用算法在材料沉积过程期间指示束系统。 可以使用诸如图像识别，室压读数和EDS信号的各种手段的反馈来指示系统在材料沉积运行期间进行自动系统修改，例如光束和气体参数或对图案的其它修改。

公开(公告)号：US09466464B1

公开(公告)日：2016-10-11

申请号：US14694710

申请日：2015-04-23

Applicant: Multibeam Corporation

Inventor： David K. Lam ,  Kevin M. Monahan ,  Michael C. Smayling ,  Theodore A. Prescop

IPC: H01J37/30 ,  H01J37/305 ,  H01J37/22 ,  H01J37/05 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be removed from a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beams. Reducing the number of process steps, and eliminating lithography steps, in localized material removal has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material removal allows for controlled variation of removal rate and enables creation of 3D structures or profiles. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted substrate processing.

Abstract translation: 用于使用没有光掩模并且没有抗蚀剂层的带电粒子束来图案化衬底的方法，装置和系统。 材料可以从设计布局数据库指导的基板上移除，该设计布局数据库被定位到由多个匹配的带电粒子束瞄准的位置。 在局部材料去除中减少工艺步骤的数量和消除光刻步骤具有减少制造周期时间并通过降低缺陷引入概率来提高产量的双重优点。 此外，高度局部化的精密材料去除允许控制的去除速率的变化，并且能够创建3D结构或轮廓。 本地气体注入器和检测器以及本地光子注入器和检测器对应于相应的列是局部的，并且可以用于促进快速，准确的靶向基板处理。

公开(公告)号：US09453281B1

公开(公告)日：2016-09-27

申请号：US14745463

申请日：2015-06-21

Applicant: Multibeam Corporation

Inventor： Theodore A. Prescop ,  Kevin M. Monahan ,  David K. Lam ,  Michael C. Smayling

IPC: C23C16/48 ,  H01J37/08 ,  H01J37/30 ,  H01J37/244 ,  H01J37/06

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.

Abstract translation: 用于使用没有光掩模并且没有抗蚀剂层的带电粒子束来图案化衬底的方法，装置和系统。 材料可以沉积到衬底上，如设计布局数据库所指示的那样，被定位到由多个匹配的带电粒子束柱靶向的位置上。 减少工艺步骤的数量和消除光刻步骤在局部化材料添加中具有减少制造周期时间并通过降低缺陷引入概率来提高产量的双重优点。 此外，高度局部化的精密材料沉积允许沉积速率的受控变化并且能够创建3D结构。 局部气体注入器和检测器以及本地光子注入器和检测器对于相应的列是局部的，并且可以用于促进快速，准确，有针对性的高度可配置的衬底处理，有利地使用所述束柱的大阵列。

公开(公告)号：US09412559B2

公开(公告)日：2016-08-09

申请号：US14311614

申请日：2014-06-23

Applicant: FEI Company

Inventor： Ryan Tanner

IPC: H01J37/304 ,  H01J37/30 ,  H01J37/28 ,  H01J37/305 ,  H01J37/26 ,  G01N1/28

CPC classification number: H01J37/3005 ,  G01N1/286 ,  H01J37/26 ,  H01J37/265 ,  H01J37/28 ,  H01J37/30 ,  H01J37/3045 ,  H01J37/3056 ,  H01J2237/2611 ,  H01J2237/28 ,  H01J2237/2803 ,  H01J2237/2814 ,  H01J2237/30472 ,  H01J2237/3174 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: A method and apparatus for performing a slice and view technique with a dual beam system. The feature of interest in an image of a sample is located by machine vision, and the area to be milled and imaged in a subsequent slice and view iteration is determined through analysis of data gathered by the machine vision at least in part. A determined milling area may be represented as a bounding box around a feature, which dimensions can be changed in accordance with the analysis step. The FIB is then adjusted accordingly to slice and mill a new face in the subsequent slice and view iteration, and the SEM images the new face. Because the present invention accurately locates the feature and determines an appropriate size of area to mill and image, efficiency is increased by preventing the unnecessary milling of substrate that does not contain the feature of interest.