公开(公告)号：US09330910B2

公开(公告)日：2016-05-03

申请号：US13882631

申请日：2011-10-31

申请人： Yi Chen ,  G. Logan Liu

发明人： Yi Chen ,  G. Logan Liu

IPC分类号： H01L21/02 ,  H01L29/06 ,  B82Y30/00 ,  B82Y40/00 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/18 ,  B82Y20/00

CPC分类号： H01L21/02612 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/0665 ,  H01L31/02363 ,  H01L31/035209 ,  H01L31/035227 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of forming an array of nanostructures includes forming a plurality of seed points on a surface of a substrate, and growing masks from the seed points to create masked regions of the substrate underlying the masks. A remainder of the substrate comprises an unmasked region. Each mask and masked region increase in size with growth time while the unmasked region of the substrate decreases in size. During the growing, the unmasked region is etched to remove material from the substrate in a depth direction, and, simultaneously, unetched structures are formed from the masked regions of the substrate underlying the masks. Each of the unetched structures has a lateral size that increases with depth.

摘要翻译： 形成纳米结构阵列的方法包括在衬底的表面上形成多个种子点，以及从种子点生长掩模以产生掩模下面的衬底的掩蔽区域。 衬底的其余部分包括未掩模区域。 每个掩模和掩模区域随着生长时间而增大，而衬底的未掩模区域的尺寸减小。 在生长期间，蚀刻未掩模区域以在深度方向上从衬底去除材料，并且同时从掩模下面的衬底的掩蔽区域形成未蚀刻的结构。 每个未蚀刻的结构具有随深度增加的横向尺寸。

公开(公告)号：US20130298977A1

公开(公告)日：2013-11-14

申请号：US13882631

申请日：2011-10-31

申请人： Yi Chen ,  G. Logan Liu

发明人： Yi Chen ,  G. Logan Liu

IPC分类号： H01L21/02 ,  H01L31/0352 ,  H01L29/06

CPC分类号： H01L21/02612 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/0665 ,  H01L31/02363 ,  H01L31/035209 ,  H01L31/035227 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of forming an array of nanostructures includes forming a plurality of seed points on a surface of a substrate, and growing masks from the seed points to create masked regions of the substrate underlying the masks. A remainder of the substrate comprises an unmasked region. Each mask and masked region increase in size with growth time while the unmasked region of the substrate decreases in size. During the growing, the unmasked region is etched to remove material from the substrate in a depth direction, and, simultaneously, unetched structures are formed from the masked regions of the substrate underlying the masks. Each of the unetched structures has a lateral size that increases with depth.

摘要翻译： 形成纳米结构阵列的方法包括在衬底的表面上形成多个种子点，以及从种子点生长掩模以产生掩模下面的衬底的掩蔽区域。 衬底的其余部分包括未掩模区域。 每个掩模和掩模区域随着生长时间而增大，而衬底的未掩模区域的尺寸减小。 在生长期间，蚀刻未掩模区域以在深度方向上从衬底去除材料，并且同时从掩模下面的衬底的掩蔽区域形成未蚀刻的结构。 每个未蚀刻的结构具有随深度增加的横向尺寸。