Method of stress-free development of irradiated polymethylmetacrylate
    1.
    发明授权
    Method of stress-free development of irradiated polymethylmetacrylate 失效
    辐射聚甲基丙烯酸甲酯的无应力发展方法

    公开(公告)号:US4393129A

    公开(公告)日:1983-07-12

    申请号:US303094

    申请日:1981-09-17

    摘要: Stress and crack-free development of resist layers or films, for example composed of PMMA, used in production of galvanically generated flat precision parts is achieved. Resist layers having a thickness of at least 100 .mu.m are exposed via electron lithography or x-ray lithography techniques whereby very fine structure patterns having dimensions in the micron and sub-micron range are attained and developed with a developer comprised of a mixture of a material selected from the glycol ether group, a material selected from the primary amine group, a material selected from the aqueous group and a material selected from the azine group. Aspect ratios of 30:1 are achieved without dark errosion. Residual PMMA components remaining after development, as well as the developer itself, are fully removed with a post-development rinsing with water so that no disruptive layer residues remain on the surface which has been uncovered through development.

    摘要翻译: 实现了用于生产电流产生的平板精密零件的抗蚀剂层或膜的抗应力和无裂纹显影,例如由PMMA组成的膜。 通过电子光刻或X射线光刻技术曝光具有至少100μm的厚度的抗蚀剂层,由此获得具有微米和亚微米范围尺寸的非常精细的结构图案,并用由 选自二醇醚基的材料,选自伯胺基的材料,选自水基的材料和选自吖嗪基的材料。 长宽比为30:1,无黑暗侵蚀。 在开发后残留的PMMA组分以及显影剂本身被完全除去,用水进行后期漂洗,使得在已经通过显影发现的表面上没有残留的破坏性层残留物。