公开(公告)号：US20060135046A1

公开(公告)日：2006-06-22

申请号：US11014889

申请日：2004-12-17

申请人： Matthew Prince ,  Mansour Moinpour ,  Francis Tambwe ,  Gary Ding

发明人： Matthew Prince ,  Mansour Moinpour ,  Francis Tambwe ,  Gary Ding

IPC分类号： B24B7/30

CPC分类号： H01L21/31053 ,  B24B27/0076 ,  B24B37/042

摘要： A multi-platen, multi-slurry chemical mechanical polishing method comprises providing a substrate having a surface that includes at least one nitride structure and an oxide layer atop the nitride structure, performing a first CMP process on the substrate using a first platen with a silica based slurry to remove a bulk portion of the oxide layer without exposing the nitride structure, performing a second CMP process on the substrate using a second platen with a ceria based slurry to remove a residual portion of the oxide layer and to expose at least a portion of the nitride structure, and performing a third CMP process on the substrate using the first platen with a silica based slurry to remove at least one defect caused by the ceria based slurry.

公开(公告)号：US07125321B2

公开(公告)日：2006-10-24

申请号：US11014889

申请日：2004-12-17

申请人： Matthew J Prince ,  Mansour Moinpour ,  Francis M Tambwe ,  Gary Ding

发明人： Matthew J Prince ,  Mansour Moinpour ,  Francis M Tambwe ,  Gary Ding

IPC分类号： B24B1/00

CPC分类号： H01L21/31053 ,  B24B27/0076 ,  B24B37/042

摘要： A multi-platen, multi-slurry chemical mechanical polishing method comprises providing a substrate having a surface that includes at least one nitride structure and an oxide layer atop the nitride structure, performing a first CMP process on the substrate using a first platen with a silica based slurry to remove a bulk portion of the oxide layer without exposing the nitride structure, performing a second CMP process on the substrate using a second platen with a ceria based slurry to remove a residual portion of the oxide layer and to expose at least a portion of the nitride structure, and performing a third CMP process on the substrate using the first platen with a silica based slurry to remove at least one defect caused by the ceria based slurry.

摘要翻译： 多压板多浆化学机械抛光方法包括提供具有包括至少一个氮化物结构和氮化物结构顶部的氧化物层的表面的衬底，使用具有二氧化硅的第一压板在衬底上进行第一CMP工艺 在不暴露氮化物结构的情况下去除氧化物层的主体部分，使用具有二氧化铈基浆料的第二压板在衬底上执行第二CMP工艺以除去氧化物层的残余部分并暴露至少一部分 的氮化物结构，并且使用具有二氧化硅基浆料的第一压板在衬底上进行第三CMP处理以除去由二氧化铈基浆料引起的至少一个缺陷。