公开(公告)号：US3961190A

公开(公告)日：1976-06-01

申请号：US556044

申请日：1975-03-06

申请人： George V. Lukianoff ,  Theodore R. Touw

发明人： George V. Lukianoff ,  Theodore R. Touw

IPC分类号： G01N23/225 ,  G01T1/29 ,  H01J37/244 ,  H01J37/28

CPC分类号： G01T1/29 ,  H01J37/244 ,  H01J2237/2443 ,  H01J2237/2448 ,  H01J2237/2449 ,  H01J2237/24507

摘要： A directionally sensitive, high contrast secondary electron detector having a novel geometrical configuration for use in scanning electron microscopes and other electron beam instruments. The aperture of the detector which is placed near the specimen is in non-parallel arrangement with the aperture which admits the primary beam. The geometry of the detector provides for tilting of the specimen with respect to the incident primary electron beam to improve sensitivity and signal-to-noise ratio in comparison with prior detectors. In the preferred embodiment, the shape of the upper grid of the detector is substantially that of a conic section, thereby preventing space-charge build-up during operation.

摘要翻译： 具有用于扫描电子显微镜和其它电子束仪器的新型几何结构的定向敏感的高对比度二次电子检测器。 放置在样本附近的检测器的孔径与允许主梁的孔不平行布置。 检测器的几何形状提供了样品相对于入射的一次电子束的倾斜，以提高与现有检测器相比的灵敏度和信噪比。 在优选实施例中，检测器的上格栅的形状基本上是锥形截面的形状，从而防止在操作期间积聚空间电荷。

公开(公告)号：US4575630A

公开(公告)日：1986-03-11

申请号：US575353

申请日：1984-01-30

申请人： George V. Lukianoff

发明人： George V. Lukianoff

IPC分类号： H01L21/66 ,  G01R31/302 ,  G01R31/305 ,  G01N23/00

CPC分类号： G01R31/305

摘要： A method for examining non-metallized semiconductor wafers without the use of any electrical or mechanical contact therewith is provided by the scanning of the wafer with an electron beam. The bombardment of the wafer with the electrons generates charges which are retained in the semiconductor material for a period of time depending on the structure and properties thereof. Defects in the structure, particularly in the structure of junctions, result in a diffusion of the charges with a consequent alteration in the energy of secondary emission which is also produced by the electron bombardment. The secondary emission is measured as the beam is scanned from point to point along the wafer to provide an image of the wafer. Differences in the intensity of points on the image show the desired junction characteristics and also indicate the locations of the defects in the wafer.

摘要翻译： 通过用电子束扫描晶片来提供用于检查非金属化半导体晶片而不使用任何电或机械接触的方法。 用电子轰击晶片会根据其结构和性能产生保留在半导体材料中的电荷一段时间。 结构中的缺陷，特别是结的结构导致电荷的扩散，从而导致二次发射的能量的改变，这也是由电子轰击产生的。 当沿着晶片从点到点扫描光束时，测量二次发射以提供晶片的图像。 图像上的点强度的差异显示出期望的结特征，并且还指示晶片中缺陷的位置。