Digital memory element
    1.
    发明授权
    Digital memory element 失效
    数字存储元件

    公开(公告)号:US5917747A

    公开(公告)日:1999-06-29

    申请号:US906620

    申请日:1997-08-07

    IPC分类号: G11C11/30 H03K19/06 G11C13/00

    CPC分类号: G11C11/30

    摘要: A digital memory element having three miniaturized electron tubes, which is faster and smaller by at least one further order of magnitude than known digital memory elements, can be produced through conventional and additive lithography. The digital memory element is a small memory capacitor linked to the anode of a write-in tube, to the cathode of an erase tube, and to a deflection element of a read-out tube which deflects an electron beam, in dependence upon the charge state, to one of two detectors.

    摘要翻译: 具有三个小型化电子管的数字存储元件可以通过常规和附加光刻技术制造,该电子管比已知数字存储元件更快更小一个数量级。 数字存储元件是连接到写入管的阳极到擦除管的阴极以及依赖于电荷而偏转电子束的读出管的偏转元件的小存储器电容器 状态,到两个检测器之一。