公开(公告)号：US20090181520A1

公开(公告)日：2009-07-16

申请号：US12174863

申请日：2008-07-17

申请人： Minhua Li ,  Qi Wang ,  Gordon Sim ,  Matthew Reynolds ,  Suku Kim ,  James J. Murphy ,  Hamza Yilmaz

发明人： Minhua Li ,  Qi Wang ,  Gordon Sim ,  Matthew Reynolds ,  Suku Kim ,  James J. Murphy ,  Hamza Yilmaz

IPC分类号： H01L21/78

CPC分类号： H01L21/78

摘要： A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.

摘要翻译： 公开了一种从半导体结构获得单个管芯的方法。 半导体结构包括器件层，器件层又包括由预定间隔隔开的有源区。 在器件层的背侧选择性地形成厚金属，使得在有源区的背面形成厚金属，而不在预定间隔的背面形成厚金属。 然后沿着预定的间隔切割半导体结构，以将其背面的厚金属的活性区域分离成单独的管芯。

公开(公告)号：US20070176231A1

公开(公告)日：2007-08-02

申请号：US11482676

申请日：2006-07-07

申请人： Qi Wang ,  Gordon Sim

发明人： Qi Wang ,  Gordon Sim

IPC分类号： H01L29/94 ,  H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/4236 ,  H01L29/42372 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7808

摘要： Circuits, methods, and apparatus for power MOSFETs having a high cell density for a high current carrying capability while maintaining a low pinched-base resistance. One device employs a number of transistor cells having varying mesa (regions between trench gates) sizes. A heavy body etch is utilized in larger cells to reduce the pinched-base resistance. This etch removes silicon in the mesa region, which is then replaced with lower-impedance aluminum. A number of smaller cells that do not receive this etch are used to increase device current capacity. Avalanche current is directed to the larger, lower pinched base cells by ensuring these cells have a lower BVDSS breakdown voltage. The large cell BVDSS can be varied by adjusting the critical dimension or width of the trench gates on either side of the wider mesas, or by adjusting the depth of the heavy body etch.

摘要翻译： 具有高电流承载能力的高电池密度的功率MOSFET的电路，方法和装置，同时保持低的基极电阻。 一个器件采用具有变化的台面（沟槽栅极之间的区域）尺寸的多个晶体管单元。 在较大的电池中使用重体蚀刻以减少夹持电阻。 该蚀刻去除台面区域中的硅，然后用较低阻抗的铝替代。 使用不接收该蚀刻的多个较小的电池来增加器件电流容量。 通过确保这些电池具有较低的BVDSS击穿电压，雪崩电流被引导到较大的较低压缩的基极电池。 可以通过调节较宽台面两侧的沟槽栅极的临界尺寸或宽度，或通过调整重体蚀刻深度来改变大电池BVDSS。

公开(公告)号：US20110201179A1

公开(公告)日：2011-08-18

申请号：US13095584

申请日：2011-04-27

申请人： Minhua Li ,  Qi Wang ,  Gordon Sim ,  Matthew Reynolds ,  Suku Kim ,  James J. Murphy ,  Hamza Yilmaz

发明人： Minhua Li ,  Qi Wang ,  Gordon Sim ,  Matthew Reynolds ,  Suku Kim ,  James J. Murphy ,  Hamza Yilmaz

IPC分类号： H01L21/78

CPC分类号： H01L21/78

摘要： A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.

摘要翻译： 公开了一种从半导体结构获得单个管芯的方法。 半导体结构包括器件层，器件层又包括由预定间隔隔开的有源区。 在器件层的背侧选择性地形成厚金属，使得在有源区的背面形成厚金属，而不在预定间隔的背面形成厚金属。 然后沿着预定的间隔切割半导体结构，以将其背面的厚金属的活性区域分离成单独的管芯。

公开(公告)号：US20050033582A1

公开(公告)日：2005-02-10

申请号：US10649336

申请日：2003-08-27

申请人： Michael Gadd ,  Keiron Trott ,  Heung Tsui ,  Mark Stairmand ,  Mark Lascelles ,  David Horowitz ,  Peter Lovatt ,  Peter Phelan ,  Kerry Robinson ,  Gordon Sim

发明人： Michael Gadd ,  Keiron Trott ,  Heung Tsui ,  Mark Stairmand ,  Mark Lascelles ,  David Horowitz ,  Peter Lovatt ,  Peter Phelan ,  Kerry Robinson ,  Gordon Sim

IPC分类号： G06Q30/00 ,  G10L13/04 ,  G10L15/18 ,  G10L15/22 ,  G10L15/26 ,  G10L11/00

CPC分类号： G06Q30/02 ,  G10L13/00 ,  G10L15/1822 ,  G10L15/22 ,  G10L15/26 ,  G10L2015/226

摘要： A spoken language interface comprises an automatic speech recognition system and a text to speech system controlled by a voice controller. The ASR and TTS are connected to a telephony system which receives user speech via a communications link. A dialogue manager is connected to the voice controller and provides control of dialogue generated in response to user speech. The dialogue manager is connected to application managers each of which provide an interface to an application with which the user can converse. Dialogue and grammars are stored in a database as data and are retrieved under the control of the dialogue manager and a personalisation and adaptive learning module. A session and notification manager records session details and enables re-connection of a broken conversation at the point at which the conversation was broken.

摘要翻译： 口语界面包括自动语音识别系统和由语音控制器控制的文本到语音系统。 ASR和TTS连接到通过通信链路接收用户语音的电话系统。 对话管理器连接到语音控制器，并提供响应于用户语音产生的对话的控制。 对话管理器连接到应用程序管理器，每个应用程序管理器提供与用户可以交谈的应用程序的接口。 对话和语法作为数据存储在数据库中，并在对话管理器和个性化和自适应学习模块的控制下被检索。 会话和通知管理器记录会话详细信息，并允许在会话断开点重新连接断开的会话。

公开(公告)号：US07951688B2

公开(公告)日：2011-05-31

申请号：US12174863

申请日：2008-07-17

申请人： Minhua Li ,  Qi Wang ,  Gordon Sim ,  Matthew Reynolds ,  Suku Kim ,  James J. Murphy ,  Hamza Yilmaz

发明人： Minhua Li ,  Qi Wang ,  Gordon Sim ,  Matthew Reynolds ,  Suku Kim ,  James J. Murphy ,  Hamza Yilmaz

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/78

摘要： A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.

摘要翻译： 公开了一种从半导体结构获得单个管芯的方法。 半导体结构包括器件层，器件层又包括由预定间隔隔开的有源区。 在器件层的背侧选择性地形成厚金属，使得在有源区的背面形成厚金属，而不在预定间隔的背面形成厚金属。 然后沿着预定的间隔切割半导体结构，以将其背面的厚金属的活性区域分离成单独的管芯。

公开(公告)号：US20070037115A1

公开(公告)日：2007-02-15

申请号：US11201059

申请日：2005-08-11

申请人： Gordon Sim

发明人： Gordon Sim

IPC分类号： A61C11/00

CPC分类号： A61C9/002 ,  A61C11/02 ,  A61C11/08

摘要： The articulators of the present invention provide relative manipulation of dental models for simulation of occlusal and masticatory movements of the mouth. The full arch articulator with a removable wall consists of four parts—a lower part, an upper part, a middle part, and a rear part. The lower part is comprised of a full arch box, a pair of female hinge assemblies, and an incisal guide plate. The full arch box has an open bottom and an insert at the top with a series of grooves. The upper part is comprised of a spherical inner surface, a spherically concaved area on the outer surface, a square box with an open top, a vertical support with sides of cylindrical halves, and an incisal pin hole. The middle part is snap-seated on top of the full arch box in the lower part. The rear part is comprised of a pair of extension arms to receive the upper part for connection and a male hinge bar which is connected to the lower part. The quadrant articulator with a detachable wall consists of two parts—an upper part and a lower part. The upper part is comprised of an elongated channeled surface, a deformable bracket, a snap-fit female hinge assembly, and a platform with a hole. The lower part is comprised of an elongated block with two rows of pin holes, two rows of struts, pin position indicators, a pair of model lifters, a tray positioning plate, a vertical stop pin holder, a snap-fit male hinge assembly, and a platform.

摘要翻译： 本发明的咬合器提供用于模拟口腔咬合和咀嚼运动的牙科模型的相对操作。 具有可拆卸墙壁的全拱式连接器由四部分组成，即下部，上部，中间部分和后部。 下部由完整的拱形盒，一对阴铰链组件和切眼导板组成。 完整的拱形盒子有一个开放的底部和一个插入在顶部与一系列的凹槽。 上部由球面内表面，外表面上的球面凹陷区域，具有开口顶部的方形盒，具有圆柱形半边的垂直支撑件和切眼针孔组成。 中间部分卡扣在下部的完整拱形箱的顶部。 后部由一对延伸臂构成，用于接纳用于连接的上部部分和连接到下部部分的阳铰链杆。 具有可拆卸壁的象限咬合器由两部分组成 - 上部和下部。 上部由细长的通道表面，可变形支架，卡扣式铰链组件和带有孔的平台组成。 下部包括具有两排销孔的细长块，两排支柱，销位置指示器，一对模型升降器，托盘定位板，垂直止动销保持器，卡扣配合阳铰链组件， 和一个平台。

公开(公告)号：US08343852B2

公开(公告)日：2013-01-01

申请号：US13095584

申请日：2011-04-27

申请人： Minhua Li ,  Qi Wang ,  Gordon Sim ,  Matthew Reynolds ,  Suku Kim ,  James J. Murphy ,  Hamza Yilmaz

发明人： Minhua Li ,  Qi Wang ,  Gordon Sim ,  Matthew Reynolds ,  Suku Kim ,  James J. Murphy ,  Hamza Yilmaz

IPC分类号： H01L21/00

CPC分类号： H01L21/78

摘要： A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.

摘要翻译： 公开了一种从半导体结构获得单个管芯的方法。 半导体结构包括器件层，器件层又包括由预定间隔隔开的有源区。 在器件层的背侧选择性地形成厚金属，使得在有源区的背面形成厚金属，而不在预定间隔的背面形成厚金属。 然后沿着预定的间隔切割半导体结构，以将其背面的厚金属的活性区域分离成单独的管芯。