公开(公告)号：US20100151681A1

公开(公告)日：2010-06-17

申请号：US12333161

申请日：2008-12-11

Applicant: Martin A. Knapp ,  Guido Probst

Inventor： Martin A. Knapp ,  Guido Probst

IPC: H01L21/44

CPC classification number: C23C16/45531 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76841 ,  H01L21/76856 ,  H01L21/76862

Abstract: Titanium silicon nitride (TiSiN) films are formed in a cyclic chemical vapor deposition process. In some embodiments, the TiSiN films are formed in a batch reactor using TiCl4, NH3 and SiH4 as precursors. Substrates are provided in a deposition chamber of the batch reactor. In each deposition cycle, a TiN layer is formed on the substrates by flowing TiCl4 into the deposition chamber simultaneously with NH3. The deposition chamber is subsequently flushed with NH3. to prepare the TiN layer for silicon incorporation. SiH4 is subsequently flowed into the deposition chamber. Silicon from the SiH4 is incorporated into the TiN layers to form TiSiN. Exposing the TiN layers to NH3 before the silicon precursor has been found to facilitate efficient silicon incorporation into the TiN layers to form TiSiN.

Abstract translation: 在环状化学气相沉积工艺中形成氮化钛（TiSiN）膜。 在一些实施方案中，TiSiN膜是使用TiCl 4，NH 3和SiH 4作为前体在间歇式反应器中形成的。 衬底设置在间歇式反应器的沉积室中。 在每个沉积循环中，通过将TiCl 4与NH 3同时流入沉积室，在衬底上形成TiN层。 沉积室随后用NH 3冲洗。 以制备用于硅掺入的TiN层。 SiH4随后流入沉积室。 将SiH 4的硅掺入到TiN层中以形成TiSiN。 在发现硅前体之前，将TiN层暴露于NH 3以促进有效的硅掺入到TiN层中以形成TiSiN。

公开(公告)号：US07833906B2

公开(公告)日：2010-11-16

申请号：US12333161

申请日：2008-12-11

Applicant: Martin A. Knapp ,  Guido Probst

Inventor： Martin A. Knapp ,  Guido Probst

IPC: H01L21/44

CPC classification number: C23C16/45531 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76841 ,  H01L21/76856 ,  H01L21/76862

Abstract: Titanium silicon nitride (TiSiN) films are formed in a cyclic chemical vapor deposition process. In some embodiments, the TiSiN films are formed in a batch reactor using TiCl4, NH3 and SiH4 as precursors. Substrates are provided in a deposition chamber of the batch reactor. In each deposition cycle, a TiN layer is formed on the substrates by flowing TiCl4 into the deposition chamber simultaneously with NH3. The deposition chamber is subsequently flushed with NH3. to prepare the TiN layer for silicon incorporation. SiH4 is subsequently flowed into the deposition chamber. Silicon from the SiH4 is incorporated into the TiN layers to form TiSiN. Exposing the TiN layers to NH3 before the silicon precursor has been found to facilitate efficient silicon incorporation into the TiN layers to form TiSiN.

Abstract translation: 在环状化学气相沉积工艺中形成氮化钛（TiSiN）膜。 在一些实施方案中，TiSiN膜是使用TiCl 4，NH 3和SiH 4作为前体在间歇式反应器中形成的。 衬底设置在间歇式反应器的沉积室中。 在每个沉积循环中，通过将TiCl 4与NH 3同时流入沉积室，在衬底上形成TiN层。 沉积室随后用NH 3冲洗。 以制备用于硅掺入的TiN层。 SiH4随后流入沉积室。 将SiH 4的硅掺入到TiN层中以形成TiSiN。 在发现硅前体之前，将TiN层暴露于NH 3以促进有效的硅掺入到TiN层中以形成TiSiN。