Device for reactive sputtering
    1.
    发明申请
    Device for reactive sputtering 审中-公开
    反应溅射装置

    公开(公告)号:US20050211550A1

    公开(公告)日:2005-09-29

    申请号:US10918749

    申请日:2004-08-12

    CPC分类号: C23C14/0042

    摘要: A device for reactive sputtering, wherein a cathode is applied a discharge voltage for a plasma, and a working gas and a reactive gas are introduced into a sputter chamber. The total gas flow in the sputter chamber is controlled with the aid of a valve, while the ratio of the partial pressures of both gases is kept constant.

    摘要翻译: 一种用于反应溅射的装置,其中向等离子体施加阴极,并且将工作气体和反应性气体引入溅射室。 借助于阀门控制溅射室中的总气体流量,而两种气体的分压比保持恒定。