公开(公告)号：US4093704A

公开(公告)日：1978-06-06

申请号：US732735

申请日：1976-10-15

申请人： Guy Michel Jacob

发明人： Guy Michel Jacob

IPC分类号： C01B25/06 ,  C22C1/00 ,  C30B11/00 ,  C30B11/06 ,  C01B25/00 ,  C22C28/00 ,  C22C30/00

CPC分类号： C30B11/00 ,  C01B25/06 ,  C22C1/007 ,  C30B11/003 ,  C30B11/06 ,  C30B29/40 ,  Y10S148/056 ,  Y10S148/065 ,  Y10S148/107 ,  Y10S148/119 ,  Y10S148/13 ,  Y10S420/903

摘要： The invention relates to a method for the synthesis of a semiconductor compound comprising at least one element of column III of the periodic table of Mendeleev, and an element of column V having a vapor pressure higher than that of element(s) III at the synthesis temperature of the said compound, and according to which, in a closed space, a liquid mass of element(s) III, placed in a first zone of said space which is heated at relatively high temperatures and is contacted with vapors obtained by evaporation of element V, said element V being placed in a second zone of the said space in a non-gaseous form, the evaporation temperature of element V being higher than that of the coldest point provided in a third zone of the said space, and the said first zone being situated between the second and the third zone.

摘要翻译： 本发明涉及一种用于合成半导体化合物的方法，该半导体化合物包含Mendeleev周期表第三列的至少一个元素，以及在合成时具有高于元素III的蒸气压的第V列元素 所述化合物的温度，并且在封闭空间中，放置在所述空间的第一区域中的元素III的液体块，其在相对高的温度下被加热并与通过蒸发获得的蒸气接触 元件V，所述元件V以非气态形式被放置在所述空间的第二区域中，元件V的蒸发温度高于设置在所述空间的第三区域中的最冷点的蒸发温度，并且所述 第一区位于第二和第三区之间。