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58 条记录 (耗时 0.012 秒)

    [R(Cl)GaAs(SiR'.sub.3).sub.2 ].sub.n
    2.
    发明授权
    [R(Cl)GaAs(SiR'.sub.3).sub.2 ].sub.n 失效
    [R（Cl）GaAs（SiR'3）2] n

    公开(公告)号：US4980490A

    公开(公告)日：1990-12-25

    申请号：US445035

    申请日：1989-12-04

    申请人： Klaus H. Theopold ,  Erin K. Byrne

    发明人： Klaus H. Theopold ,  Erin K. Byrne

    IPC分类号： C07F9/70 ,  C22C1/00

    CPC分类号： C07F9/703 ,  C22C1/007

    摘要： A novel gallium arsenide precursor has the formula R.sub.2 GaAs(SiR').sub.2 wherein R is selected from the group consisting of alkyl substituted cycloaliphatic group and alkyl substituted aromatic group and R' is alkyl. Preferably, R is pentamethylcyclopentadienyl and R' is methyl. The precursor is reacted with an alcohol, preferably ethanol or t-butanol at a temperature ranging from -20.degree. C. to 60.degree. C., preferably at room temperature, under water free conditions to form solid gallium arsenide and by-products which are liquid under the reaction conditions. The gallium arsenide forming reaction may be aided by a catalyst providing amount of a substance which is considered to react with excess alcohol reactant to generate a catalytic amount of HCl, e.g., (CH.sub.3).sub.3 SiCl or [R(Cl)GaAs(SiR'.sub.3).sub.2 ].sub.n wherein R is pentamethylcyclopentadienyl and R' is methyl and in solution in benzene n is 1 and 3.

    摘要翻译： 一种新型的砷化镓前体具有式R2GaAs（SiR'）2，其中R选自烷基取代的脂环族基团和烷基取代的芳族基团，R'是烷基。 优选地，R是五甲基环戊二烯基，R'是甲基。 在无水条件下，将前体与醇，优选乙醇或叔丁醇在-20℃至60℃的温度下反应，优选在室温下反应，形成固体砷化镓和副产物， 液体在反应条件下。 可以通过提供量的被认为与过量醇反应物反应以产生催化量的HCl，例如（CH 3）3 SiCl或[R（Cl）GaAs（SiR'3）]的物质来辅助形成砷化镓的反应 ）2] n其中R是五甲基环戊二烯基，R'是甲基，在苯n的溶液中是1和3。

    High-temperature Hg anneal for HgCdTe
    3.
    发明授权
    High-temperature Hg anneal for HgCdTe 失效
    HgCdTe的高温Hg退火

    公开(公告)号：US4481044A

    公开(公告)日：1984-11-06

    申请号：US591903

    申请日：1984-03-21

    申请人： Herbert F. Schaake ,  John H. Tregilgas

    发明人： Herbert F. Schaake ,  John H. Tregilgas

    IPC分类号： C22C1/00 ,  H01L21/477 ,  C21D1/74

    CPC分类号： C22C1/007 ,  H01L21/477 ,  Y10S438/971

    摘要： The dislocation density near the surface of Hg.sub.1-x Cd.sub.x Te alloys is substantially reduced by annealing the material at around 600.degree. C. in a mercury saturated ambient for periods of four hours or more, prior to post annealing at lower temperatures to control the metal vacancy concentration. This procedure allows dislocation reduction by climb, reduces the concentration of metal vacancies which can collapse to form dislocation loops or contribute to dislocation multiplication, and reduces tellurium precipitates which contribute to dislocation multiplication during subsequent post annealing.

    摘要翻译： 在Hg1-xCdxTe合金表面附近的位错密度通过在大约600℃下在汞饱和环境中退火4小时或更长的时间，在较低温度下退火之后大大降低材料，以控制金属空位浓度 。 该步骤允许通过爬升减少位错，减少可能塌陷以形成位错环或有助于位错倍增的金属空位的浓度，并且减少在随后的后退火期间有助于位错倍增的碲沉淀物。

    Method for manufacturing thin and flexible ribbon wafer of _semiconductor material and ribbon wafer
    4.
    发明授权
    Method for manufacturing thin and flexible ribbon wafer of _semiconductor material and ribbon wafer 失效
    用于制造半导体材料和带状晶片的薄而柔性的带状晶片的方法

    公开(公告)号：US4363769A

    公开(公告)日：1982-12-14

    申请号：US225242

    申请日：1981-01-15

    申请人： Noboru Tsuya ,  Kenichi Arai

    发明人： Noboru Tsuya ,  Kenichi Arai

    IPC分类号： B22D11/06 ,  C22C1/00 ,  C30B11/00 ,  C30B11/14 ,  C30B15/06 ,  C30B29/64 ,  H01L21/208 ,  H01L31/04 ,  H01L31/18 ,  B29D7/02

    CPC分类号： C30B11/001 ,  B22D11/0611 ,  C22C1/007 ,  C30B11/14 ,  H01L31/18

    摘要： A method for manufacturing a thin and flexible ribbon wafer of semiconductor material such as germanium, silicon, selenium, tellurium, PbS, InSb, ZnTe, PbSe, InAs, InP, GaSb, PbTe, ZnS, Bi.sub.2 Te.sub.3, and mixtures thereof comprises melting the semiconductor material at a temperature within the range from a melting point thereof to 300.degree. C. above the melting point to form a uniform melt; ejecting under a pressure the melt through a nozzle against a cooling surface of a moving substrate to cool very rapidly a jet flow of the melt at a cooling rate of 1,000.degree. C. to 1,000,000.degree. C./sec to form the ribbon type thin and flexible wafer of fine and compact microscopic structure having a large mechanical strength and an excellent electrical property. It is possible to add to the melt various additives as fluxes or impurities such as B, P, BP, Sb Sn, As, B, P, Sb, In, Al and alloys intermetallic compounds, and conjugates thereof. The thin ribbon wafer as grown is preferably heated at a temperature from within the range 500.degree. C. to the melting point for a time within the range from 0.1 second to one week. The invention also provides a thin and flexible ribbon wafer of semiconductor material manufactured by the above mentioned process.

    摘要翻译： 用于制造诸如锗，硅，硒，碲，PbS，InSb，ZnTe，PbSe，InAs，InP，GaSb，PbTe，ZnS，Bi2Te3及其混合物的半导体材料的薄而柔性的带状晶片的方法包括将半导体 材料在熔点以上的熔点至300℃的范围内，形成均匀的熔体; 在压力下通过喷嘴将熔体喷射抵靠移动的基板的冷却表面，以1000℃至1,000,000℃/秒的冷却速度非常快速地冷却熔体的喷射流，以形成薄带型和 具有大的机械强度和优异的电性能的精细且紧凑的微观结构的柔性晶片。 可以将诸如B，P，BP，SbSn，As，B，P，Sb，In，Al和合金金属间化合物及其共轭物的助熔剂或杂质作为助熔剂或杂质添加到熔体中。 生长的薄带晶片优选在从500℃到550℃的温度范围内加热0.1秒至1周的时间。 本发明还提供了通过上述方法制造的薄而柔性的半导体材料带状晶片。

    Method for synthesizing compound semiconductor polycrystals and apparatus therefor
    8.
    发明授权
    Method for synthesizing compound semiconductor polycrystals and apparatus therefor 失效
    化合物半导体多晶体的合成方法及其设备

    公开(公告)号：US5524571A

    公开(公告)日：1996-06-11

    申请号：US478016

    申请日：1990-02-09

    申请人： Akihisa Kawasaki ,  Toshihiro Kotani

    发明人： Akihisa Kawasaki ,  Toshihiro Kotani

    IPC分类号： B01J3/04 ,  C01B19/00 ,  C01B25/08 ,  C01G9/08 ,  C22C1/00 ,  C30B15/02

    CPC分类号： C22C1/007 ,  B01J3/04 ,  C01B19/007 ,  C01B25/087 ,  C01G9/08 ,  Y10T117/1052

    摘要： Herein disclosed are apparatuses for manufacturing compound semiconductor polycrystals comprising a pressure vessel, an upper shaft, a container for a first component fixed to the upper shaft, a heater around the container, a lower shaft, a susceptor and a crucible for charging a second component, a heater for the crucible and a communicating pipe for spatially connecting the container and the crucible optionally provided with a porous member at the lower extremity and/or a cylindrical member for confining a space over a part of the melt surface contained in the crucible from the remaining inner space of the vessel, the apparatuses permitting the substantial reduction of the reaction time and an improvement of the yield of the polycrystals due to the presence of the porous member and/or the cylindrical member separating the inner space of the vessel into two portions.

    摘要翻译： 本文公开了用于制造化合物半导体多晶体的装置，包括压力容器，上轴，用于固定到上轴的第一部件的容器，容器周围的加热器，下轴，基座和用于对第二部件充电的坩埚 ，用于坩埚的加热器和用于空间连接容器和坩埚的连通管，所述坩埚在下端和/或圆柱形构件上任选地设置有多孔构件，用于限制坩埚中包含的熔体表面的一部分上的空间， 容器的剩余内部空间，允许显着减少反应时间的装置以及由于多孔构件和/或将容器的内部空间分离成两个的圆柱形构件的存在而导致的多晶体的产量的提高 部分。

    Oxide-free CdTe synthesis
    9.
    发明授权
    Oxide-free CdTe synthesis 失效
    无氧化物CdTe合成

    公开(公告)号：US4447393A

    公开(公告)日：1984-05-08

    申请号：US465129

    申请日：1983-02-09

    申请人： Donald F. Weirauch

    发明人： Donald F. Weirauch

    IPC分类号： C22C1/00 ,  C22C1/02 ,  C22C20/00

    CPC分类号： C22C1/007 ,  Y10S420/903

    摘要： The problem of CdTe sticking to quartz boats is avoided by preventing any presence of cadmium oxides in the as-compounded CdTe. This is accomplished by distilling the cadmium under a high vacuum immediately prior to the CdTe compounding step.

    摘要翻译： 通过防止在复合CdTe中存在镉氧化物，可以避免CdTe粘附在石英舟上的问题。 这是通过在CdTe配混步骤之前立即在高真空下蒸馏镉来实现的。

    Method for synthesis of III-V compounds
    10.
    发明授权
    Method for synthesis of III-V compounds 失效
    III-V化合物的合成方法

    公开(公告)号：US4093704A

    公开(公告)日：1978-06-06

    申请号：US732735

    申请日：1976-10-15

    申请人： Guy Michel Jacob

    发明人： Guy Michel Jacob

    IPC分类号： C01B25/06 ,  C22C1/00 ,  C30B11/00 ,  C30B11/06 ,  C01B25/00 ,  C22C28/00 ,  C22C30/00

    CPC分类号： C30B11/00 ,  C01B25/06 ,  C22C1/007 ,  C30B11/003 ,  C30B11/06 ,  C30B29/40 ,  Y10S148/056 ,  Y10S148/065 ,  Y10S148/107 ,  Y10S148/119 ,  Y10S148/13 ,  Y10S420/903

    摘要： The invention relates to a method for the synthesis of a semiconductor compound comprising at least one element of column III of the periodic table of Mendeleev, and an element of column V having a vapor pressure higher than that of element(s) III at the synthesis temperature of the said compound, and according to which, in a closed space, a liquid mass of element(s) III, placed in a first zone of said space which is heated at relatively high temperatures and is contacted with vapors obtained by evaporation of element V, said element V being placed in a second zone of the said space in a non-gaseous form, the evaporation temperature of element V being higher than that of the coldest point provided in a third zone of the said space, and the said first zone being situated between the second and the third zone.

    摘要翻译： 本发明涉及一种用于合成半导体化合物的方法，该半导体化合物包含Mendeleev周期表第三列的至少一个元素，以及在合成时具有高于元素III的蒸气压的第V列元素 所述化合物的温度，并且在封闭空间中，放置在所述空间的第一区域中的元素III的液体块，其在相对高的温度下被加热并与通过蒸发获得的蒸气接触 元件V，所述元件V以非气态形式被放置在所述空间的第二区域中，元件V的蒸发温度高于设置在所述空间的第三区域中的最冷点的蒸发温度，并且所述 第一区位于第二和第三区之间。