公开(公告)号：US20240283220A1

公开(公告)日：2024-08-22

申请号：US18444796

申请日：2024-02-19

申请人： SEIKO EPSON CORPORATION

发明人： Yoshitomo KUMAI ,  Toru NIMURA

IPC分类号： H01S5/18 ,  C30B25/02 ,  C30B29/40 ,  C30B29/42 ,  C30B29/68 ,  H01S5/343

CPC分类号： H01S5/18 ,  C30B25/02 ,  C30B29/40 ,  C30B29/42 ,  C30B29/68 ,  H01S5/34313

摘要： A method for manufacturing a photonic crystal including forming a first layer, forming a first hole and a second hole, crystal-growing a second layer, to form, at the first hole, a first low refractive index portion, and form, at the second hole, a second low refractive index portion, wherein during formation of the first hole and the second hole, the first hole and the second hole are formed such that a diameter of the first hole is greater than a diameter of the second hole, and during formation of the first low refractive index portion and the second low refractive index portion, the second layer is crystal-grown such that a difference between the diameter of the first hole and a diameter of the first low refractive index portion is greater than a difference between the diameter of the second hole and a diameter of the second low refractive index portion.

公开(公告)号：US20240274746A1

公开(公告)日：2024-08-15

申请号：US18566764

申请日：2022-06-06

申请人： Alliance for Sustainable Energy, LLC

发明人： Kevin Louis SCHULTE ,  Wondwosen Tilahun METAFERIA ,  Aaron Joseph PTAK ,  John David SIMON

IPC分类号： H01L31/18 ,  C30B25/18 ,  C30B25/20 ,  C30B29/40 ,  C30B29/42 ,  H01L31/0735

CPC分类号： H01L31/1844 ,  C30B25/18 ,  C30B25/20 ,  C30B29/40 ,  C30B29/42 ,  H01L31/0735

摘要： Disclosed herein are methods for the growth of (110) GaAs solar cells by hydride vapor phase epitaxy (HVPE) as an advance towards a (110)-oriented device platform with substrate reuse via spalling. Controlled spalling offers a fracture-based path to substrate amortization, allowing device removal and substrate reuse, but the faceted surface generated in spalling of (100)-GaAs presents hurdles to direct regrowth of subsequent devices. Spalling of (110)-oriented substrates takes advantage of the natural (110) cleavage plane in zinc-blende III-V materials, eliminating this faceting.

公开(公告)号：US12054851B2

公开(公告)日：2024-08-06

申请号：US18117669

申请日：2023-03-06

申请人： AXT, Inc.

发明人： Morris Young ,  Weiguo Liu ,  Wen Wan Zhou ,  Sungnee George Chu ,  Wei Zhang

IPC分类号： C30B29/40 ,  C30B11/00 ,  C30B11/14 ,  C30B29/64 ,  C30B33/10 ,  H01L29/20 ,  H01L29/34

CPC分类号： C30B29/64 ,  C30B11/002 ,  C30B11/003 ,  C30B11/006 ,  C30B11/14 ,  C30B29/40 ,  C30B33/10 ,  H01L29/20

摘要： Methods and wafers for low etch pit density, low slip line density, and low strain indium phosphide are disclosed and may include an indium phosphide single crystal wafer having a diameter of 4 inches or greater, having a measured etch pit density of less than 500 cm−2, and having fewer than 5 dislocations or slip lines as measured by x-ray diffraction imaging. The wafer may have a measured etch pit density of 200 cm−2 or less, or 100 cm−2 or less, or 10 cm−2 or less. The wafer may have a diameter of 6 inches or greater. An area of the wafer with a measured etch pit density of zero may at least 80% of the total area of the surface. An area of the wafer with a measured etch pit density of zero may be at least 90% of the total area of the surface.

公开(公告)号：US20240209546A1

公开(公告)日：2024-06-27

申请号：US18293137

申请日：2021-12-08

申请人： THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION

发明人： Shujie WANG ,  Niefeng SUN ,  Senfeng XU ,  Tongnian SUN ,  Huisheng LIU

IPC分类号： C30B33/02 ,  C30B29/40

CPC分类号： C30B33/02 ,  C30B29/40

摘要： A preparation device and method of semi-insulated indium phosphide belong to the field of crystal preparation. The preparation device includes a furnace body, and a crucible, an injector and an in-situ annealing device within the furnace body. The method includes: A, heating indium to form an indium melt; B, filling the furnace body with hydrogen of 0.02-0.3 MPa and holding the pressure for 1-5 hours, and covering the surface of the melt with liquid boron oxide; C, filling the furnace body with an inert gas of 6-15 MPa; D, injecting a phosphorus gas into the indium melt by the injector; E, growing a crystal; and F, annealing the crystal within the in-situ annealing device. Using the present invention can complete the growth of the crystal and implement the in-situ annealing of the crystal in a suitable space, and especially when annealing under a phosphorus atmosphere is required, it ensures that the phosphorus gas does not condense to maintain the pressure in the annealing space and establish a good annealing environment, and the quality of the semi-insulated indium phosphide crystal is ensured.

公开(公告)号：US11975979B2

公开(公告)日：2024-05-07

申请号：US17252360

申请日：2019-06-20

申请人： University of Houston System

发明人： Zhifeng Ren ,  Fei Tian ,  Gang Chen ,  Bai Song ,  Ke Chen ,  Li Shi ,  Xi Chen ,  Sean Sullivan ,  David Broido ,  Navaneetha Krishnan Ravichandran

IPC分类号： C30B29/40 ,  C01B35/04

CPC分类号： C01B35/04 ,  C30B29/40 ,  C01P2004/61 ,  C01P2006/32

摘要： A method for growing bulk boron arsenide (BA) crystals, the method comprising utilizing a seeded chemical vapor transport (CVT) growth mechanism to produce single BAs crystals which are used for further CVT growth, wherein a sparsity of nucleation centers is controlled during the further CVT growth. Also disclosed are bulk BAs crystals produced via the method.

公开(公告)号：US11948858B2

公开(公告)日：2024-04-02

申请号：US16967362

申请日：2019-02-01

申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

发明人： Yongjie Hu ,  Joon Sang Kang

IPC分类号： H01L23/373 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02 ,  H01L29/20

CPC分类号： H01L23/3738 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02546 ,  H01L21/02598 ,  H01L21/0262 ,  H01L29/20

摘要： A device includes: (1) a boron arsenide substrate; and (2) an integrated circuit disposed in or over the boron arsenide substrate.

公开(公告)号：US11894225B2

公开(公告)日：2024-02-06

申请号：US17289524

申请日：2020-06-04

申请人： JX METALS CORPORATION

发明人： Shunsuke Oka ,  Hideki Kurita ,  Kenji Suzuki

IPC分类号： H01L21/02 ,  B28D5/04 ,  C30B25/18 ,  C30B29/40 ,  C30B33/10 ,  H01L29/20

CPC分类号： H01L21/02019 ,  B28D5/042 ,  C30B25/186 ,  C30B29/40 ,  C30B33/10 ,  H01L29/20

摘要： Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a BOW value of −2.0 to 2.0 μm, as measured with the back surface of the indium phosphide substrate facing upward.

公开(公告)号：US11881391B1

公开(公告)日：2024-01-23

申请号：US17402171

申请日：2021-08-13

申请人： Radiation Monitoring Devices, Inc. ,  University of Chicago ,  Brookhaven Science Associates, LLC

发明人： Harish B. Bhandari ,  Vivek V. Nagarkar ,  Olena E. Ovechkina ,  Henry J. Frisch ,  Klaus Attenkofer ,  John M. Smedley

IPC分类号： H01J9/12 ,  H01J1/34 ,  H02S50/15 ,  C23C14/34 ,  C23C14/54 ,  C23C14/00 ,  C23C14/06 ,  C30B23/02 ,  C30B29/40 ,  C23C14/02 ,  C23C14/16 ,  G01N21/63

CPC分类号： H01J9/12 ,  C23C14/0036 ,  C23C14/025 ,  C23C14/06 ,  C23C14/165 ,  C23C14/3414 ,  C23C14/545 ,  C23C14/548 ,  C30B23/02 ,  C30B29/40 ,  G01N21/63 ,  H01J1/34 ,  H02S50/15

摘要： Methods and systems for fabricating a film, such as, for example, a photocathode, having a tailored band structure and thin-film components that can be tailored for specific applications, such as, for example photocathode having a high quantum efficiency, and simple components fabricated by those methods.

公开(公告)号：US20230374700A1

公开(公告)日：2023-11-23

申请号：US18031088

申请日：2021-10-07

申请人： JX NIPPON MINING & METALS CORPORATION

发明人： Shunsuke OKA ,  Keita KAWAHIRA ,  Akira NODA

IPC分类号： C30B29/40 ,  C30B15/20

CPC分类号： C30B29/40 ,  C30B15/206

摘要： Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, a method for producing an indium phosphide single-crystal ingot and a method for producing indium phosphide substrate capable of suppressing concave defects. An indium phosphide substrate has a diameter of 100 mm or less, and at least one of surfaces has zero concave defects detected in the topography channel, by irradiating a laser beam of 405 nm wavelength with S-polarized light on the surface.

公开(公告)号：US20190035625A1

公开(公告)日：2019-01-31

申请号：US16077023

申请日：2017-02-10

申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

发明人： Roman DIETZ ,  Thorsten GÖBEL ,  Björn GLOBISCH ,  William Ted MASSELINK ,  Mykhaylo Petrovych SEMTSIV

IPC分类号： H01L21/02 ,  C30B29/40

CPC分类号： H01L21/02546 ,  C30B23/063 ,  C30B29/40 ,  G01J3/42 ,  H01L21/02543 ,  H01L21/02581 ,  H01L21/02631

摘要： A terahertz antenna includes at least one photoconductive layer which generates charge carriers upon irradiation of light and two electroconductive antenna elements via which an electric field can be applied to at least one section of the photoconductive layer. The photoconductive layer being doped with a dopant in a concentration of at least 1×1018 cm−3, the dopant being a transition metal. The photoconductive layer is produced by molecular beam epitaxy at a growth temperature of at least 200° C. and not more than 500° C., the dopant being arranged in the photoconductive layer such that it produces a plurality of point defects.