公开(公告)号：US20140375826A1

公开(公告)日：2014-12-25

申请号：US14310305

申请日：2014-06-20

申请人： Myung Won Lee ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deck Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

发明人： Myung Won Lee ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deck Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

IPC分类号： H01L27/30 ,  H04N1/00

CPC分类号： H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

摘要： An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

摘要翻译： 一种图像传感器，包括：第一层，其具有形成在半导体衬底中的多组光电二极管，每个组表示2×2的光电二极管阵列，其中2个第一像素被配置为检测第一波长的光和2秒的像素， 检测第二波长的光，每个第一像素定位成与第二像素相邻; 以及与所述第一层重叠的第二层，所述第二层是有机的，具有被配置为检测第三波长的光的多个有机光电二极管，每个有机光电二极管定位成部分地重叠第一层的2个第一光电二极管和2个第二光电二极管。