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    Image sensor and image processing device including the same
    1.
    发明授权
    Image sensor and image processing device including the same 有权
    图像传感器和包括其的图像处理装置

    公开(公告)号：US09099367B2

    公开(公告)日：2015-08-04

    申请号：US13541996

    申请日：2012-07-05

    Applicant: Hirosige Goto ,  Yi Tae Kim

    Inventor： Hirosige Goto ,  Yi Tae Kim

    IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/376 ,  H04N5/355 ,  H04N5/365 ,  H04N17/00

    CPC classification number: H01L27/1461 ,  H01L27/14616 ,  H04N5/355 ,  H04N5/365 ,  H04N5/3745 ,  H04N5/376 ,  H04N17/002

    Abstract: An image sensor includes a pixel array and a calibration circuit. The pixel array includes a plurality of pixels each of which includes a photoelectric conversion device configured to absorb incident light and generate a photocharge, a transfer transistor configured to transfer the photocharge from the photoelectric conversion device to a floating diffusion node, and a reset transistor configured to reset the floating diffusion node. The calibration circuit is connected to the reset transistor of each pixel, and is configured to apply a different voltage to each pixel and adjust an amount of photocharge generated by the photoelectric conversion device in each pixel.

    Abstract translation: 图像传感器包括像素阵列和校准电路。 像素阵列包括多个像素，每个像素包括被配置为吸收入射光并产生光电荷的光电转换装置，被配置为将光电荷从光电转换装置转移到浮动扩散节点的转移晶体管，以及复位晶体管， 以重置浮动扩散节点。 校准电路连接到每个像素的复位晶体管，并且被配置为向每个像素施加不同的电压并且调整由每个像素中的光电转换器件产生的光电荷的量。

    IMAGE SENSOR AND IMAGE PROCESSING DEVICE INCLUDING THE SAME
    2.
    发明申请
    IMAGE SENSOR AND IMAGE PROCESSING DEVICE INCLUDING THE SAME 有权
    图像传感器和图像处理装置，包括它们

    公开(公告)号：US20130012263A1

    公开(公告)日：2013-01-10

    申请号：US13541996

    申请日：2012-07-05

    Applicant: HIROSIGE GOTO ,  YI TAE KIM

    Inventor： HIROSIGE GOTO ,  YI TAE KIM

    IPC: H01L27/146 ,  H04W88/02 ,  H04N5/335

    CPC classification number: H01L27/1461 ,  H01L27/14616 ,  H04N5/355 ,  H04N5/365 ,  H04N5/3745 ,  H04N5/376 ,  H04N17/002

    Abstract: An image sensor includes a pixel array and a calibration circuit. The pixel array includes a plurality of pixels each of which includes a photoelectric conversion device configured to absorb incident light and generate a photocharge, a transfer transistor configured to transfer the photocharge from the photoelectric conversion device to a floating diffusion node, and a reset transistor configured to reset the floating diffusion node. The calibration circuit is connected to the reset transistor of each pixel, and is configured to apply a different voltage to each pixel and adjust an amount of photocharge generated by the photoelectric conversion device in each pixel.

    Abstract translation: 图像传感器包括像素阵列和校准电路。 像素阵列包括多个像素，每个像素包括被配置为吸收入射光并产生光电荷的光电转换装置，被配置为将光电荷从光电转换装置转移到浮动扩散节点的转移晶体管，以及复位晶体管， 以重置浮动扩散节点。 校准电路连接到每个像素的复位晶体管，并且被配置为向每个像素施加不同的电压并且调整由每个像素中的光电转换器件产生的光电荷的量。

    Image sensor configured to regulate a quantity of light absorbed thereby, electronic device including the same, and image sensing method
    5.
    发明授权
    Image sensor configured to regulate a quantity of light absorbed thereby, electronic device including the same, and image sensing method 有权
    图像传感器被配置为调节由此吸收的光量，包括其的电子设备和图像感测方法

    公开(公告)号：US08953073B2

    公开(公告)日：2015-02-10

    申请号：US13618076

    申请日：2012-09-14

    Applicant: Sang Chul Sul ,  Hirosige Goto ,  Kyung Ho Lee

    Inventor： Sang Chul Sul ,  Hirosige Goto ,  Kyung Ho Lee

    IPC: H04N3/14 ,  H04N5/335 ,  H04N5/359 ,  H01L27/30 ,  H04N5/3745

    CPC classification number: H04N5/3745 ,  H01L27/307 ,  H04N5/3591 ,  H04N5/378

    Abstract: An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit.

    Abstract translation: 提供了图像传感器和图像感测方法。 图像传感器包括半导体衬底; 光电转换器包括偏置单元，其包括第一电极和第二电极，以及有机光电转换层，其选择性地吸收光并将光转换成电子; 与所述第二电极接触以将所述光电转换器与所述半导体衬底连接的通孔; 被配置为存储电子的存储节点; 读出单元，用于将从存储节点传送的电荷转换为图像信号; 包括多个像素的像素阵列，每个像素包括中间绝缘层; 以及输出电路，被配置为从像素阵列读出图像信号。 由有机光电转换层接收的光量由偏置单元的偏置变化来调节。

    IMAGE SENSOR, ELECTRONIC DEVICE INCLUDING THE SAME, AND IMAGE SENSING METHOD
    6.
    发明申请
    IMAGE SENSOR, ELECTRONIC DEVICE INCLUDING THE SAME, AND IMAGE SENSING METHOD 有权
    图像传感器，包括其的电子设备和图像感测方法

    公开(公告)号：US20130093911A1

    公开(公告)日：2013-04-18

    申请号：US13618076

    申请日：2012-09-14

    Applicant: Sang Chul SUL ,  Hirosige GOTO ,  Kyung Ho LEE

    Inventor： Sang Chul SUL ,  Hirosige GOTO ,  Kyung Ho LEE

    IPC: H01L27/146 ,  H04N5/225

    CPC classification number: H04N5/3745 ,  H01L27/307 ,  H04N5/3591 ,  H04N5/378

    Abstract: An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit.

    Abstract translation: 提供了图像传感器和图像感测方法。 图像传感器包括半导体衬底; 光电转换器包括偏置单元，其包括第一电极和第二电极，以及有机光电转换层，其选择性地吸收光并将光转换成电子; 与所述第二电极接触以将所述光电转换器与所述半导体衬底连接的通孔; 被配置为存储电子的存储节点; 读出单元，用于将从存储节点传送的电荷转换为图像信号; 包括多个像素的像素阵列，每个像素包括中间绝缘层; 以及输出电路，被配置为从像素阵列读出图像信号。 由有机光电转换层接收的光量由偏置单元的偏置变化来调节。

    ORGANIC PIXELS INCLUDING ORGANIC PHOTODIODE, MANUFACTURING METHODS THEREOF, AND APPARATUSES INCLUDING THE SAME
    7.
    发明申请
    ORGANIC PIXELS INCLUDING ORGANIC PHOTODIODE, MANUFACTURING METHODS THEREOF, AND APPARATUSES INCLUDING THE SAME 审中-公开
    包含有机光电子体的有机像素及其制造方法及包括其的装置

    公开(公告)号：US20150054995A1

    公开(公告)日：2015-02-26

    申请号：US14466395

    申请日：2014-08-22

    Applicant: Kyo Jin CHOO ,  Hirosige GOTO ,  Kyu Sik KIM ,  Yun Kyung KIM ,  Kyung Bae PARK ,  Jin Ho SEO ,  Sang Chul SUL ,  Kyung Ho LEE ,  Kwang-hee LEE

    Inventor： Kyo Jin CHOO ,  Hirosige GOTO ,  Kyu Sik KIM ,  Yun Kyung KIM ,  Kyung Bae PARK ,  Jin Ho SEO ,  Sang Chul SUL ,  Kyung Ho LEE ,  Kwang-hee LEE

    IPC: H01L27/30 ,  H04N5/378 ,  H04N5/369 ,  H01L51/42

    CPC classification number: H01L27/307 ,  H01L51/424 ,  H04N5/3698 ,  H04N5/37452 ,  H04N5/378

    Abstract: Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.

    Abstract translation: 提供了一种有机像素，其包括具有像素电路的半导体衬底，具有第一接触的互连层和形成在半导体衬底上的第一电极以及形成在互连层上的有机光电二极管。 例如，有机光电二极管包括形成在第一电极上的绝缘层，形成在第一接触件，绝缘层和第二电极之间的第二电极和光电转换区域。 光电转换区域包括给电子有机材料和受电子有机材料。 有机光电二极管还可以包括电连接到第一触点的第二触点。 第二触点和绝缘层之间的水平距离可以小于或等于几微米，例如10微米。

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