THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US20160351725A1

    公开(公告)日:2016-12-01

    申请号:US15098385

    申请日:2016-04-14

    Abstract: Embodiments of the present disclosure provide a thin film transistor (TFT) and a method of manufacturing the same, which enables to decrease the vertical resistance from the source and the drain to the polarity inversion region, so that the current from the source and the drain to the polarity inversion region may be increased, thereby improving the performances of the TFT. An active layer of the TFT is provided with a first groove and a second groove which neither pass through the active layer. A source and a drain of the TFT are formed at least partially in the first groove and the second groove, respectively. The source and the drain contact the active layer through the first groove and the second groove, respectively.

    Abstract translation: 本公开的实施例提供一种薄膜晶体管(TFT)及其制造方法,其能够降低从源极和漏极到极性反转区域的垂直电阻,使得来自源极和漏极的电流 可以增加极性反转区域,从而提高TFT的性能。 TFT的有源层设置有不穿过有源层的第一沟槽和第二沟槽。 TFT的源极和漏极分别至少部分地形成在第一沟槽和第二沟槽中。 源极和漏极分别通过第一凹槽和第二凹槽接触有源层。

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