公开(公告)号：US5796804A

公开(公告)日：1998-08-18

申请号：US794906

申请日：1997-02-04

Applicant: Young Jin Jeon ,  Sang Soo Choi ,  Hai Bin Chung ,  Jong Hyun Lee ,  Hyung Joun Yoo

Inventor： Young Jin Jeon ,  Sang Soo Choi ,  Hai Bin Chung ,  Jong Hyun Lee ,  Hyung Joun Yoo

IPC: G03F1/14 ,  G03F7/20 ,  G21K1/10 ,  G21K5/08

CPC classification number: G03F7/70691 ,  G21K1/10

Abstract: A X-ray mask structure which reduces the distortion of the membrane, the X-ray mask structure including, a mask substrate having an opening in the central part thereof, a membrane formed on the mask substrate, the membrane having the chip site on which absorbers are arranged according to a desired pattern of a semiconductor device, and a support ring for supporting the mask substrate, which is defined by a plurality of fragments.

Abstract translation: 一种减少膜变形的X射线掩模结构，所述X射线掩模结构包括在其中心部分具有开口的掩模基板，形成在掩模基板上的膜，其上具有芯片位置的膜 吸收体根据半导体器件的期望图案和用于支撑由多个片段限定的掩模衬底的支撑环布置。

公开(公告)号：US6101047A

公开(公告)日：2000-08-08

申请号：US132303

申请日：1998-08-11

Applicant: Hai Bin Chung ,  Jong Soo Kim ,  Kag Hyeon Lee ,  Doh Hoon Kim ,  Sang Soo Choi ,  Hyung Joun Yoo

Inventor： Hai Bin Chung ,  Jong Soo Kim ,  Kag Hyeon Lee ,  Doh Hoon Kim ,  Sang Soo Choi ,  Hyung Joun Yoo

IPC: G02B17/08 ,  G03F7/20 ,  G02B17/00

CPC classification number: G02B17/0892 ,  G02B17/08 ,  G03F7/70225

Abstract: Provided with an optical system which is applicable to an exposure apparatus used in the manufacture of semiconductors and includes a combination of a spherical mirror having a function of refraction and lenses for astigmation control, using a CaF.sub.2 lens as the last lens, thereby making it possible to use a light source operating at a short wavelength and a wide bandwidth, enhance the life of the optical system, and transfer the enlarge pattern of a mask onto the wafer for realizing fine line width.

Abstract translation: 提供了适用于半导体制造中使用的曝光装置的光学系统，并且包括具有折射功能的球面镜和用于散光控制的透镜的组合，使用CaF2透镜作为最后的透镜，从而使其成为可能 使用在短波长和宽带宽下工作的光源，增加光学系统的寿命，并且将掩模的放大图案转移到晶片上以实现细线宽度。

公开(公告)号：US6057970A

公开(公告)日：2000-05-02

申请号：US161426

申请日：1998-09-24

Applicant: Doh Hoon Kim ,  Kag Hyeon Lee ,  Sang Soo Choi ,  Hai Bin Chung ,  Bo Woo Kim

Inventor： Doh Hoon Kim ,  Kag Hyeon Lee ,  Sang Soo Choi ,  Hai Bin Chung ,  Bo Woo Kim

IPC: H01L21/027 ,  G02B5/30 ,  G03F7/20 ,  G02B3/10 ,  G03F9/00 ,  G21K5/10

CPC classification number: G02B27/0075 ,  G02B5/3083 ,  G03F7/70216

Abstract: The present invention relates to an apparatus for forming fine patterns in semiconductor devices, display devices and micro-electro-mechanical systems and more particularly to an image projecting system using an optical component, which is made of birefringent material, in the lithography techniques. The lithography apparatus according to the present invention comprises an optical lens system in which an image of a photomask is transferred to an object by a light source, wherein said optical lens system comprises a plurality of isotropic optical unit and at least one birefringent optical unit, said birefringent optical unit including at least one of said birefringent optical components.

Abstract translation: 本发明涉及一种用于在半导体器件，显示器件和微电子机械系统中形成精细图案的装置，更具体地涉及在光刻技术中使用由双折射材料制成的光学部件的图像投影系统。 根据本发明的光刻设备包括其中通过光源将光掩模的图像转印到物体的光学透镜系统，其中所述光学透镜系统包括多个各向同性光学单元和至少一个双折射光学单元， 所述双折射光学单元包括所述双折射光学部件中的至少一个。

公开(公告)号：US06635404B1

公开(公告)日：2003-10-21

申请号：US09498322

申请日：2000-02-04

Applicant: Sang Soo Choi ,  Jim Hee Lee ,  Doh Hoon Kim ,  Kag Hyeon Lee ,  Hai Bin Chung ,  Dae Yong Kim

Inventor： Sang Soo Choi ,  Jim Hee Lee ,  Doh Hoon Kim ,  Kag Hyeon Lee ,  Hai Bin Chung ,  Dae Yong Kim

IPC: G03F700

CPC classification number: H01L29/66462 ,  H01L21/28593 ,  H01L29/42316

Abstract: A method of fabricating a resist pattern for a gamma gate of high electron mobility transistors of gallium arsenide (GaAs) elements for high-speed data communication with low noise is disclosed. The method of fabricating the gamma gate according to the present invention includes the steps of forming a first resist pattern by coating a first resist on a GaAs substrate, and exposing, developing and baking the coated first resist, sequentially; and forming a second resist pattern by coating a second resist on the GaAs substrate and the first resist pattern. and exposing, developing and baking the coated second resist, sequentially. A portion of the GaAs substrate covered by the first and the second resist patterns defines a region that a footprint of the gamma gate is formed, and a portion of the GaAs substrate which is covered by the first resist pattern, but not covered by the second resist pattern defines a region that a head of the gamma gate is formed.

Abstract translation: 公开了一种制造用于低噪声高速数据通信的砷化镓（GaAs）元件的高电子迁移率晶体管的γ栅极的抗蚀剂图案的方法。 根据本发明的制造伽马栅的方法包括以下步骤：通过在GaAs衬底上涂覆第一抗蚀剂并依次曝光，显影和烘烤涂覆的第一抗蚀剂来形成第一抗蚀剂图案; 以及通过在所述GaAs衬底和所述第一抗蚀剂图案上涂覆第二抗蚀剂来形成第二抗蚀剂图案。 并依次曝光，显影和烘烤涂覆的第二抗蚀剂。 由第一和第二抗蚀剂图案覆盖的GaAs衬底的一部分限定了形成伽马栅极的覆盖区域的区域和由第一抗蚀剂图案覆盖但不被第二抗蚀剂图案覆盖的GaAs衬底的一部分 抗蚀图案限定了形成伽马栅的头部的区域。

公开(公告)号：US06542317B2

公开(公告)日：2003-04-01

申请号：US09746639

申请日：2000-12-21

Applicant: Kag Hyeon Lee ,  Doh Hoon Kim ,  Sang Soo Choi ,  Hai Bin Chung ,  Dae Yong Kim

Inventor： Kag Hyeon Lee ,  Doh Hoon Kim ,  Sang Soo Choi ,  Hai Bin Chung ,  Dae Yong Kim

IPC: G02B900

CPC classification number: H01L21/02686 ,  G02B5/3083 ,  G02B7/04 ,  G02B13/143 ,  G02B26/0891 ,  G02B27/28 ,  H01L21/2026

Abstract: The present invention provides an optical system for crystallization tool for producing an crystallized silicon thin film by using an excimer laser as a light source to crystallize an amorphous silicon thin film through a fine stripped pattern, including 1st to 10th lenses sequentially arranged along an optical axis from said excimer laser, wherein the 1st lens having both side made convex; the 2nd lens having one side made convex toward the light source and the other side concave; the 3rd lens having one side made convex toward the light source and the other side concave; the 4th lens having both side concave; the 5th lens having both side made convex; the 6th lens having one side concave toward the light source and the other side made convex; the 7th lens having one side made convex toward the light source and the other side concave; the 8th lens having both side made convex; the 9th lens having one side made convex toward the light source and the other side concave; and the 10th lens having both side made convex.

Abstract translation: 本发明提供一种用于通过使用准分子激光器作为光源来生产结晶硅薄膜的光学系统，以通过精细剥离图案使非晶硅薄膜结晶，包括沿着光轴顺序排列的第1至第10透镜 从所述准分子激光器，其中所述第一透镜具有两个侧面凸起; 第二透镜，其一侧朝向光源凸出，另一侧为凹面; 第三透镜的一侧朝向光源凸出，另一侧凹入; 第四透镜具有两侧凹面; 第五透镜具有两侧凸起; 第六透镜的一侧朝向光源凹入，另一侧为凸面; 第七透镜的一侧朝向光源凸出，另一侧为凹面; 第八透镜具有两侧凸起; 第九透镜的一侧朝向光源凸出，另一侧为凹面; 并且具有两个侧面凸起的第十个透镜。