公开(公告)号：US6101047A

公开(公告)日：2000-08-08

申请号：US132303

申请日：1998-08-11

申请人： Hai Bin Chung ,  Jong Soo Kim ,  Kag Hyeon Lee ,  Doh Hoon Kim ,  Sang Soo Choi ,  Hyung Joun Yoo

发明人： Hai Bin Chung ,  Jong Soo Kim ,  Kag Hyeon Lee ,  Doh Hoon Kim ,  Sang Soo Choi ,  Hyung Joun Yoo

IPC分类号： G02B17/08 ,  G03F7/20 ,  G02B17/00

CPC分类号： G02B17/0892 ,  G02B17/08 ,  G03F7/70225

摘要： Provided with an optical system which is applicable to an exposure apparatus used in the manufacture of semiconductors and includes a combination of a spherical mirror having a function of refraction and lenses for astigmation control, using a CaF.sub.2 lens as the last lens, thereby making it possible to use a light source operating at a short wavelength and a wide bandwidth, enhance the life of the optical system, and transfer the enlarge pattern of a mask onto the wafer for realizing fine line width.

摘要翻译： 提供了适用于半导体制造中使用的曝光装置的光学系统，并且包括具有折射功能的球面镜和用于散光控制的透镜的组合，使用CaF2透镜作为最后的透镜，从而使其成为可能 使用在短波长和宽带宽下工作的光源，增加光学系统的寿命，并且将掩模的放大图案转移到晶片上以实现细线宽度。

公开(公告)号：US5939833A

公开(公告)日：1999-08-17

申请号：US951177

申请日：1997-10-15

申请人： Yoon-Ho Song ,  Jin-Ho Lee ,  Kyoung-Ik Cho ,  Hyung-Joun Yoo

发明人： Yoon-Ho Song ,  Jin-Ho Lee ,  Kyoung-Ik Cho ,  Hyung-Joun Yoo

IPC分类号： H01J29/96 ,  G09F9/30 ,  G09G3/20 ,  G09G3/22 ,  H01J1/30 ,  H01J29/04 ,  H01J31/12 ,  H04N9/12 ,  G09G3/10

CPC分类号： G09G3/22 ,  H01J31/127 ,  G09G2300/08 ,  G09G3/2014 ,  H01J2201/30426 ,  H01J2201/319

摘要： The present invention relates to a field emission display which applies a field emission device (or field emitter) to a flat panel display. The field emission display in accordance with the present invention has the lower plate in which the pixel array and the scan and data driving circuits are integrated one insulating substrate, therefore, it is possible to implement a field emission display capable of providing a high quality picture in a low price. The voltage is applied to the scan and data driving circuits may considerably decrease through the tin film transistor attached to each pixel. The field emission characteristics are stabilized by the resistor attached to the field emission device so that reliable field emission display may be fabricated. Further, since all the processes are carried out at a low temperature, a glass, which is low in price and has a large area, may be used as an insulating substrate.

摘要翻译： 本发明涉及将场致发射器件（或场发射极）施加到平板显示器上的场发射显示器。 根据本发明的场发射显示器具有其中像素阵列和扫描和数据驱动电路集成在一个绝缘基板上的下板，因此，可以实现能够提供高质量图像的场致发射显示 价格低廉。 电压被施加到扫描，并且数据驱动电路可以通过连接到每个像素的锡膜晶体管显着地减小。 场发射特性通过附着在场发射器件上的电阻来稳定，从而可以制造可靠的场发射显示。 此外，由于所有的工艺都是在低温下进行的，所以价格低廉且面积大的玻璃可以用作绝缘基板。

公开(公告)号：US5677089A

公开(公告)日：1997-10-14

申请号：US548302

申请日：1995-11-01

申请人： Byung-Sun Park ,  Yong-Ho Oh ,  Sang-Soo Choi ,  Hyung-Joun Yoo

发明人： Byung-Sun Park ,  Yong-Ho Oh ,  Sang-Soo Choi ,  Hyung-Joun Yoo

IPC分类号： G03F1/00 ,  G03F1/29 ,  G03F1/38 ,  G03F9/00

CPC分类号： G03F1/29 ,  G03F1/50

摘要： A photomask according to the present invention for forming a T-gate electrode for Metal Semiconductor Field Effect Transistor and High Electron Mobility Transistor by performing each of the exposing process and the developing process once is disclosed. The photomask is composed of a primary mask positioned at the top surface of the transparent substrate made of Silica glass and a secondary mask positioned at the top surface of the transparent substrate for enhancing the resolution of the primary mask. The primary mask includes an opaque layer in which a material for mask pattern of, for example, Cr or Fe.sub.2 O.sub.3, or other opaque materials is deposited at the bottom surface of the transparent substrate, thereby preventing the light radiated from being transmitted, and a first and second patterns for forming the leg portion and the head portion of the T-gate electrode by simultaneously radiating the light into the exposed portion of the transparent substrate. The secondary mask includes a phase shifting part for shifting the phase of the light so radiated to effect the diffraction and interference phenomenon of the light transmitted through the predetermined portion of the top surface of the transparent substrate, which is etched to a predetermined extent, and an optical transmissive part for transmitting the light as it is, without shifting the phase of the light. According to the present invention, a simplified photoresist pattern for forming a T-gate electrode of the semiconductor device can be obtained by applying the exposing process and the developing process once onto a single layer of the resist, using the photolithography. The superior resolution ability can also be achieved by controlling the diffraction and interference phenomenon of the light transmitted through the phase shifting part and the transmissive part of the secondary.

摘要翻译： 公开了根据本发明的用于通过执行曝光处理和显影处理一次来形成金属半导体场效应晶体管和高电子迁移率晶体管的T栅电极的光掩模。 光掩模由位于由硅玻璃制成的透明基板的顶表面处的主掩模和位于透明基板的顶表面处的二次掩模组成，以增强初级掩模的分辨率。 初级掩模包括不透明层，其中用于例如Cr或Fe 2 O 3的掩模图案的材料或其它不透明材料沉积在透明基板的底表面处，从而防止辐射的光被透射，并且第一 以及用于通过同时将光辐射到透明基板的暴露部分中来形成T形栅电极的腿部和头部的第二图案。 辅助掩模包括用于移动如此辐射的光的相位的相移部分，以实现透射通过预定范围的透明基板的顶表面的预定部分的光的衍射和干涉现象，以及 用于传输光的光透射部分，而不移动光的相位。 根据本发明，通过使用光刻法将曝光工艺和显影处理一次施加到抗蚀剂的单层上，可以获得用于形成半导体器件的T形栅电极的简化光致抗蚀剂图案。 还可以通过控制透过相移部分和次级透射部分的光的衍射和干涉现象来实现优异的分辨能力。

公开(公告)号：US06292084B1

公开(公告)日：2001-09-18

申请号：US09136613

申请日：1998-08-20

申请人： Chang Auck Choi ,  Jong Hyun Lee ,  Won Ick Jang ,  Yong Il Lee ,  Jong Tae Baek ,  Hyung Joun Yoo

发明人： Chang Auck Choi ,  Jong Hyun Lee ,  Won Ick Jang ,  Yong Il Lee ,  Jong Tae Baek ,  Hyung Joun Yoo

IPC分类号： H01F500

CPC分类号： H01F5/003 ,  H01F17/0033

摘要： A fine inductor having a 3-dimensional coil structure is disclosed. The inductor includes an insulating layer having a groove, a plurality of first conductive patterns wherein the respective first conductive patterns cover bottom and both walls of the groove formed in the insulating layer, both ends of the respective first conductive patterns are extended over upper surface of both sides of the groove, and each of the first conductive patterns is disposed at a predetermined space between adjacent first conductive patterns, and a plurality of second conductive patterns wherein one ends of the respective second conductive patterns are connected to the one ends of the first conductive patterns extended over upper surface and the other ends of the respective second conductive patterns are connected to the other ends of the adjacent first conductive patterns extended over upper surface, thereby forming a coil structure together with the first conductive patterns.

摘要翻译： 公开了具有3维线圈结构的精细电感器。 电感器包括具有凹槽的绝缘层，多个第一导电图案，其中相应的第一导电图案覆盖形成在绝缘层中的凹槽的底部和两个壁，各个第一导电图案的两个端部延伸到 沟槽的两侧，并且每个第一导电图案设置在相邻的第一导电图案之间的预定空间处，以及多个第二导电图案，其中各个第二导电图案的一端连接到第一导电图案的一端 在上表面延伸的导电图案和相应的第二导电图案的另一端连接到在上表面上延伸的相邻的第一导电图案的另一端，从而与第一导电图案一起形成线圈结构。

公开(公告)号：US5953580A

公开(公告)日：1999-09-14

申请号：US925197

申请日：1997-09-08

申请人： Sung Weon Kang ,  Jin Ho Lee ,  Kyoung Ik Cho ,  Hyung Joun Yoo

发明人： Sung Weon Kang ,  Jin Ho Lee ,  Kyoung Ik Cho ,  Hyung Joun Yoo

IPC分类号： H01L21/205 ,  H01J9/02 ,  H01L20/100

CPC分类号： H01J9/025

摘要： A method of manufacturing a vacuum device utilizing a sputtering process is disclosed. According to the present invention, the vacuum device includes a silicon substrate. An emission electrode having a sharp ended tip is formed by etching the silicon substrate. An insulating layer is formed on the silicon substrate so as to make the entire structure of the emission electrode to be exposed, with the emission electrode being surrounded by the insulating layer. A gate electrode is then formed adjacent to the sharp ended tip of the emission electrode. According to the present invention, it has advantages that the emission electrode is manufactured by forming the silicon pillar using the isotropic etching and anisotropic etching and the gate electrode can be easily formed adjacent to the emission electrode by using the sputtering method after the gate insulating layer is formed. Further, the distance between the emission electrode and the gate electrode may be easily adjusted, and the vacuum device may be operated with the desired voltage by controlling the distance between the emission electrode and the gate electrode of the vacuum device.

摘要翻译： 公开了一种使用溅射工艺制造真空装置的方法。 根据本发明，真空装置包括硅基板。 通过蚀刻硅衬底形成具有尖端的尖端的发射电极。 在硅衬底上形成绝缘层，以使发射电极的整个结构被暴露，发射电极被绝缘层包围。 然后在发射电极的尖端处形成栅电极。 根据本发明，具有通过使用各向同性蚀刻和各向异性蚀刻形成硅柱来制造发射电极的优点，并且通过在栅绝缘层之后使用溅射法容易地在栅极电极附近形成栅电极 形成了。 此外，可以容易地调节发射电极和栅电极之间的距离，并且可以通过控制发射电极和真空装置的栅电极之间的距离，以期望的电压来操作真空装置。

公开(公告)号：US6137219A

公开(公告)日：2000-10-24

申请号：US122823

申请日：1998-07-27

申请人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho ,  Hyung Joun Yoo

发明人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho ,  Hyung Joun Yoo

IPC分类号： H01J1/30 ,  G09G3/22 ,  H01J31/12

CPC分类号： G09G3/22 ,  H01J31/127 ,  G09G2300/08 ,  H01J2201/304 ,  H01J2201/319

摘要： A field emission display having an n-channel high voltage thin film transistor is disclosed. According to the present invention, a signal for driving pixels controls by the nHVTFT attached with each pixel, therefore, the signal voltage of row and column drivers is exceedingly decreased. As a result, it is possible to implement a field emission display capable of providing a high quality picture in a low consumption power, a low driving voltage and inexpensive to manufacture, and preventing a line cross talk using the nHVTFT. By using a cylindrical resistive body underlying a cone-shaped emitter tip, the present invention is to provide a field emission display having an excellent contollability and stability of the emission current, and a dynamic driving capability.

摘要翻译： 公开了具有n沟道高电压薄膜晶体管的场致发射显示器。 根据本发明，通过每个像素附着的nHVTFT控制用于驱动像素的信号，因此，行和列驱动器的信号电压被极大地降低。 结果，可以实现能够以低功耗，低驱动电压提供高质量图像并且制造成本低廉的场致发射显示器，并且防止使用nHVTFT的线路串扰。 通过使用锥形发射极尖端下方的圆柱形电阻体，本发明提供了具有优异的发射电流的可配置性和稳定性以及动态驱动能力的场致发射显示器。

公开(公告)号：US5783749A

公开(公告)日：1998-07-21

申请号：US675970

申请日：1996-07-05

申请人： Jong-Hyun Lee ,  Boo-Yeon Choi ,  Kyung-Ho Park ,  Hyung-Joun Yoo

发明人： Jong-Hyun Lee ,  Boo-Yeon Choi ,  Kyung-Ho Park ,  Hyung-Joun Yoo

IPC分类号： G01C19/00 ,  G01C19/56 ,  G01P15/08 ,  G01P9/04

CPC分类号： G01C19/56 ,  G01P15/0802

摘要： A vibrating disk type micro-gyroscope and a method of manufacture thereof are disclosed. The micro-gyroscope includes a support platform for supporting a vibrating disk, the vibrating disk converting a resonance frequency into two beat frequencies, a bottom detection electrode for detecting the angular velocity of the gyroscope from a detection of the electrostatic capacitance changes between the bottom detection electrode and the vibrating disk, and an upper drive electrode for exciting the vibrating disk. The method includes the steps of: depositing an insulator layer, a polycrystalline silicon layer, the bottom detection layer, and the bottom sacrificial layer; dry etching the bottom sacrificial layer; depositing polycrystalline silicon doped with dopants; dry etching every area except the support platform and the vibrating disk; depositing an oxide upper sacrificial layer; and forming a pattern and then wet etching the upper sacrificial layer and the bottom sacrificial layer.

摘要翻译： 公开了一种振动盘式微陀螺仪及其制造方法。 微陀螺仪包括用于支撑振动盘的支撑平台，振动盘将共振频率转换成两个拍频;底部检测电极，用于检测陀螺仪的角速度，从检测到底部检测之间的静电电容变化 电极和振动盘，以及用于激励振动盘的上驱动电极。 该方法包括以下步骤：沉积绝缘体层，多晶硅层，底部检测层和底部牺牲层; 干蚀刻底部牺牲层; 沉积掺杂有掺杂剂的多晶硅; 干燥蚀刻除支撑平台和振动盘之外的每个区域; 沉积氧化物上牺牲层; 并形成图案，然后湿蚀刻上牺牲层和底牺牲层。

公开(公告)号：US5543253A

公开(公告)日：1996-08-06

申请号：US357017

申请日：1994-12-16

申请人： Byung-Sun Park ,  Yong-Ho Oh ,  Sang-Soo Choi ,  Hyung-Joun Yoo

发明人： Byung-Sun Park ,  Yong-Ho Oh ,  Sang-Soo Choi ,  Hyung-Joun Yoo

IPC分类号： G03F1/70 ,  G03F1/80 ,  H01L21/027 ,  H01L21/338 ,  H01L29/812 ,  G03F9/00

CPC分类号： G03F1/50

摘要： The present invention relates to a photomask for forming a T-shaped gate structure on a high speed FET through a photolithography, comprising opaque layer patterns 2 and 2a for defining a head portion of the T-shaped gate structure and half-tone layer patterns 3 and 3a for defining a foot portion thereof.The half-tone film patterns composed of a chrome layer are deposited to a thickness thinner than that of the opaque layer patterns so that the half-tone layer patterns show a relatively lower transmittance to an incident beam.The application of the photomask of the invention to the process for forming a T-shaped gate structure improves process reproducibility and leads to great cost savings.

摘要翻译： 本发明涉及一种用于通过光刻法在高速FET上形成T形栅极结构的光掩模，其包括用于限定T形栅极结构和半色调层图案3的头部的不透明层图案2和2a 和3a用于限定其脚部。 由铬层构成的半色调膜图案被沉积成比不透明层图案的厚度薄的厚度，使得半色调层图案对入射光束显示相对较低的透射率。 将本发明的光掩模应用于形成T形栅极结构的工艺提高了工艺的再现性并且导致了巨大的成本节约。

公开(公告)号：US5843837A

公开(公告)日：1998-12-01

申请号：US719878

申请日：1996-09-25

申请人： Jong-Tae Baek ,  Youn-Tae Kim ,  Hyung-Joun Yoo

发明人： Jong-Tae Baek ,  Youn-Tae Kim ,  Hyung-Joun Yoo

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76882 ,  H01L21/76838 ,  Y10S438/906

摘要： A contact hole burying method is provided including the steps of: coating an oxide layer on a substrate and removing the oxide layer except for a portion thereof to form a contact hole extending through the oxide layer in electrical contact with the oxide layer; sequentially forming a metal barrier layer and wet layer on the oxide layer and inside the contact hole to form an electrical connection to the substrate; forming a conductive metal layer on the wet layer; removing impurity ions and oxide material, which remain in the conductive metal layer which decrease mobility of metal atoms on a surface of said conductive layer due to absorption and oxidation, by a cleaning-etching process using a plasma; and reflowing the conductive metal layer at a relatively low temperature in a reactive furnace where the cleaning-etching process is performed to completely fill the contact hole.

摘要翻译： 提供一种接触孔掩埋方法，包括以下步骤：在基底上涂覆氧化物层，除去其一部分之外的氧化物层，以形成与氧化物层电接触延伸穿过氧化物层的接触孔; 在氧化物层和接触孔内依次形成金属阻挡层和湿层，以形成与衬底的电连接; 在湿层上形成导电金属层; 通过使用等离子体的清洗蚀刻工艺，去除残留在导电金属层中的杂质离子和氧化物材料，其通过吸收和氧化而降低所述导电层的表面上的金属原子的迁移率; 并且在执行清洁蚀刻处理的反应炉中以相对较低的温度回流导电金属层以完全填充接触孔。

公开(公告)号：US5810935A

公开(公告)日：1998-09-22

申请号：US564575

申请日：1995-11-29

申请人： Jong-Hyun Lee ,  Hyung-Joun Yoo ,  Boo-Yeon Choi ,  Won-Ick Jang ,  Ki-Ho Jang

发明人： Jong-Hyun Lee ,  Hyung-Joun Yoo ,  Boo-Yeon Choi ,  Won-Ick Jang ,  Ki-Ho Jang

IPC分类号： B65G49/07 ,  B25J15/08 ,  H01L21/677 ,  H01L21/68 ,  H01L21/687 ,  C23C16/00

CPC分类号： H01L21/68707 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/141

摘要： An apparatus for transferring a wafer in a semiconductor manufacturing process, and for carrying a wafer between a cassette and a wafer chuck without an additional tool such as a tripod. The apparatus includes: a holder capable of holding the side of the wafer; a wafer transfer assembly including an actuator of the holder and a detector that detects a malfunction of the holder; and a process reactor having a vacuum exhaust port installed under a wafer chuck so as to guide gas in an axially-symmetric flow pattern. The holder grasps the rounded side of a wafer. Removal of additional tools makes the structure of an overall system more simple and an exhaust port can be installed under the reactor so as to cause processing gas to be guided in an axially-symmetric flow, resulting in an enhancement of the process uniformity.

摘要翻译： 一种用于在半导体制造工艺中转移晶片的装置，并且用于在没有诸如三脚架的附加工具之间将晶片携带在盒和晶片卡盘之间。 该装置包括：能够保持晶片侧面的保持器; 晶片传送组件，其包括所述保持器的致动器和检测器，所述检测器检测所述保持器的故障; 以及具有安装在晶片卡盘下方的真空排气口以便引导轴向对称流动模式的气体的处理反应器。 保持器抓住晶片的圆形侧。 除去附加工具使得整个系统的结构更简单，并且排气口可以安装在反应器下方，以便使处理气体以轴向对称的流动被引导，导致工艺均匀性的提高。