Method and system for photolithographic fabrication with resolution far below the diffraction limit
    1.
    发明授权
    Method and system for photolithographic fabrication with resolution far below the diffraction limit 有权
    分辨率远低于衍射极限的光刻制造方法和系统

    公开(公告)号:US08432533B2

    公开(公告)日:2013-04-30

    申请号:US12652410

    申请日:2010-01-05

    IPC分类号: G03B27/72 G03F7/00

    摘要: A method and system for photolithography is provided. The system includes a photoresist comprising a photoinitiator and a prepolymer resin. The system further includes a first light source operable to generate at least a first beam of light which is focused on a first area of the photoresist. The first beam of light is configured to excite the photoinitiator. The system further includes a second light source operable to generate at least a second beam of light which is focused on a second area of the photoresist, the second beam of light configured to deactivate at least temporarily the photoinitiator excited by the first beam of light. The first area and second area overlap at least partially. A time difference of at least 10 ns exists between the photoinitiator being excited by the first beam of light and the photoinitiator initiating polymerization.

    摘要翻译: 提供了一种用于光刻的方法和系统。 该系统包括包含光引发剂和预聚物树脂的光致抗蚀剂。 该系统还包括第一光源,其可操作以产生聚焦在光致抗蚀剂的第一区域上的至少第一光束。 第一光束被配置为激发光引发剂。 该系统还包括第二光源,其可操作以产生聚焦在光致抗蚀剂的第二区域上的至少第二光束,第二光束被配置为至少暂时停用由第一光束激发的光引发剂。 第一区域和第二区域至少部分重叠。 在由第一光束激发的光引发剂和光引发剂引发聚合之间存在至少10ns的时间差。

    METHOD AND SYSTEM FOR PHOTOLITHOGRAPHIC FABRICATION WITH RESOLUTION FAR BELOW THE DIFFRACTION LIMIT
    3.
    发明申请
    METHOD AND SYSTEM FOR PHOTOLITHOGRAPHIC FABRICATION WITH RESOLUTION FAR BELOW THE DIFFRACTION LIMIT 有权
    用于分辨率下的分辨率制图的方法和系统

    公开(公告)号:US20110039213A1

    公开(公告)日:2011-02-17

    申请号:US12652410

    申请日:2010-01-05

    IPC分类号: G03F7/20 G03B27/72

    摘要: A method and system for photolithography is provided. The system includes a photoresist comprising a photoinitiator and a prepolymer resin. The system further includes a first light source operable to generate at least a first beam of light which is focused on a first area of the photoresist. The first beam of light is configured to excite the photoinitiator. The system further includes a second light source operable to generate at least a second beam of light which is focused on a second area of the photoresist, the second beam of light configured to deactivate at least temporarily the photoinitiator excited by the first beam of light. The first area and second area overlap at least partially. A time difference of at least 10 ns exists between the photoinitiator being excited by the first beam of light and the photoinitiator initiating polymerization.

    摘要翻译: 提供了一种用于光刻的方法和系统。 该系统包括包含光引发剂和预聚物树脂的光致抗蚀剂。 该系统还包括第一光源,其可操作以产生聚焦在光致抗蚀剂的第一区域上的至少第一光束。 第一光束被配置为激发光引发剂。 该系统还包括第二光源,其可操作以产生聚焦在光致抗蚀剂的第二区域上的至少第二光束,第二光束被配置为至少暂时停用由第一光束激发的光引发剂。 第一区域和第二区域至少部分重叠。 在由第一光束激发的光引发剂和光引发剂引发聚合之间存在至少10ns的时间差。