公开(公告)号：US20150295091A1

公开(公告)日：2015-10-15

申请号：US14354215

申请日：2013-04-24

Applicant: Hefei BOE Optoeletronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Binbin CAO ,  Chengshao YANG ,  Bozhu ZHOU

IPC: H01L29/786 ,  H01L29/423 ,  H01L27/12 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  G02F1/136286 ,  G02F1/1368 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3288 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66969

Abstract: An oxide thin film transistor array substrate, a manufacturing method thereof and a display panel are provided. The oxide TFT array substrate includes a base substrate and an oxide TFT, a gate line, a data line and a pixel electrode provided on the base substrate, the drain electrode of the oxide TFT being connected with the pixel electrode, wherein a connection structure is provided between the source electrode of the oxide TFT and the data line, by which the source electrode of the oxide TFT and the data line are electrically connected, and the resistivity of the connection structure is larger than the resistivity of the source electrode.

Abstract translation: 提供氧化物薄膜晶体管阵列基板，其制造方法和显示面板。 氧化物TFT阵列基板包括基底和氧化物TFT，栅极线，数据线和设置在基底基板上的像素电极，氧化物TFT的漏极与像素电极连接，其中连接结构为 设置在氧化物TFT的源电极和数据线之间，氧化物TFT的源电极和数据线电连接，并且连接结构的电阻率大于源电极的电阻率。