Memory Cell Arrangement and Method for Reading State Information From a Memory Cell Bypassing an Error Detection Circuit
    3.
    发明申请
    Memory Cell Arrangement and Method for Reading State Information From a Memory Cell Bypassing an Error Detection Circuit 审中-公开
    用于从旁路故障检测电路的存储单元中读取状态信息的存储单元布置和方法

    公开(公告)号:US20090282308A1

    公开(公告)日:2009-11-12

    申请号:US12118560

    申请日:2008-05-09

    CPC classification number: G06F11/1052 G06F11/1048

    Abstract: In an embodiment, an integrated circuit having a memory cell arrangement is provided. The memory cell arrangement may include at least one memory cell, at least one error detection circuit, and a controller configured to control a read operation to read state information from the at least one memory cell by reading a memory cell state information bypassing the at least one error correction circuit, or by reading the memory cell state information and supplying it to the at least one error correction circuit.

    Abstract translation: 在一个实施例中,提供了具有存储单元布置的集成电路。 存储单元布置可以包括至少一个存储单元,至少一个错误检测电路和被配置为通过读取至少绕过至少一个存储单元的存储单元状态信息来控制读取操作以从至少一个存储单元读取状态信息的控制器 一个错误校正电路,或通过读取存储单元状态信息并将其提供给至少一个纠错电路。

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