公开(公告)号：US20080308874A1

公开(公告)日：2008-12-18

申请号：US11910613

申请日：2006-03-30

Applicant: Theodore Letavic ,  Herman Effing ,  Robert Cook

Inventor： Theodore Letavic ,  Herman Effing ,  Robert Cook

IPC: H01L29/00 ,  H01L21/8238

CPC classification number: H01L29/0878 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/7838

Abstract: An asymmetric semiconductor device (10) and method of forming the same in which 25V devices can be fabricated in processes with gate oxide thicknesses designed for 2.75 or 5.5V maximum operation. The device includes: a shallow trench isolation (STI) region (12) that forms a dielectric between a drain region (18) and a gate region (20) of a unit cell to allow for high voltage operation; and an n-type well (14) and a p-type well (24) patterned within the unit cell.

Abstract translation: 一种非对称半导体器件（10）及其形成方法，其中可以在最大操作为2.75或5.5V的栅极氧化物厚度的工艺中制造25V器件。 该器件包括：浅沟槽隔离（STI）区域（12），其在单元电池的漏极区域（18）和栅极区域（20）之间形成电介质，以允许高电压操作; 以及在单元电池内图案化的n型阱（14）和p型阱（24）。