公开(公告)号：US20080179287A1

公开(公告)日：2008-07-31

申请号：US11685766

申请日：2007-03-14

申请人： Kenneth S. Collins ,  Hirojii Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： Kenneth S. Collins ,  Hirojii Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： C23F1/00

CPC分类号： H01L21/0209 ,  H01L21/02063 ,  H01L21/31138

摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. Gas flow is confined at the edge of the workpiece within a gap at the edge of the workpiece, the gap configured to be on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. The process further includes evacuating the lower process zone, generating a plasma in an external chamber from a polymer etch precursor gas, and introducing a by-product from the plasma into the lower process zone. The process further includes pumping a purge gas into the upper process zone to remove polymer etch species from the upper process zone.

摘要翻译： 提供了从工件的背面除去聚合物的方法。 该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。 气体流动被限制在工件的边缘处的工件边缘的间隙内，该间隙构造成约为室直径的约1％，间隙限定了含有 前侧和一个含有背面的下部工艺区。 该方法进一步包括排空下部工艺区域，从聚合物蚀刻前体气体在外部室中产生等离子体，以及将副产物从等离子体引入下部工艺区域。 该方法还包括将净化气体泵入上部工艺区域以从上部工艺区域去除聚合物蚀刻物质。