公开(公告)号：US20100279512A1

公开(公告)日：2010-11-04

申请号：US12743047

申请日：2008-10-30

申请人： Hirokazu Udea ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Hirokazu Udea ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L21/465 ,  H01L21/46

CPC分类号： C23C16/511 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32954 ,  H05H1/46

摘要： A plasma processing apparatus includes an antenna unit for generating plasma by using microwaves as a plasma source in such a way that a first region having a relatively high electron temperature of plasma, and a second region having a lower electron temperature of plasma than the first region are formed in a chamber, a first arranging means for arranging a semiconductor substrate W in the first region, a second arranging means for arranging the semiconductor substrate in the second region, and a plasma generation stopping means for stopping the generation of plasma of a plasma generating means, while the semiconductor substrate is arranged in the second region.

摘要翻译： 等离子体处理装置包括：天线单元，用于通过使用微波作为等离子体源来产生等离子体，使得等离子体的电子温度相对较高的第一区域和具有比第一区域更低的等离子体电子温度的第二区域 形成在腔室中，第一布置装置，用于在第一区域中布置半导体衬底W;第二布置装置，用于将半导体衬底布置在第二区域;以及等离子体产生停止装置，用于停止产生等离子体的等离子体 同时半导体衬底被布置在第二区域中。