公开(公告)号：US11978608B2

公开(公告)日：2024-05-07

申请号：US17201436

申请日：2021-03-15

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Yuuji Ishida

IPC: H01J37/08 ,  H01J37/18 ,  H01J37/317 ,  H01J37/32

CPC classification number: H01J37/08 ,  H01J37/18 ,  H01J37/3171 ,  H01J37/32064 ,  H01J37/32614 ,  H01J37/32954

Abstract: There is provided an ion generation device including a plasma generation chamber that generates a plasma for extracting an ion, and a heating device configured to heat the plasma generation chamber by irradiating a member that defines the plasma generation chamber or a member that is to be exposed to the plasma generated inside the plasma generation chamber with a laser beam.

公开(公告)号：US09930766B2

公开(公告)日：2018-03-27

申请号：US14912035

申请日：2014-07-30

Applicant: NANYANG TECHNOLOGICAL UNIVERSITY

Inventor： Chia Sern Chan ,  Shuyan Xu ,  Pavlo Rutkevych ,  Luxiang Xu

IPC: H05H1/00 ,  H01J37/32 ,  G01N27/62

CPC classification number: H05H1/0037 ,  G01N27/62 ,  H01J37/32954 ,  H01J37/32972 ,  H05H1/0081

Abstract: An apparatus for diagnostics of neutral radicals in plasma, the apparatus comprising: a portable probe configured to be attached to and extend into a plasma chamber to obtain information from plasma contained in the plasma chamber, the probe comprising a metallic rod configured to be biased with an alternating current voltage applied to the probe to obtain current measurements; a transparent dielectric sleeve having a large bandgap configured to allow light transmission to obtain optical emission spectra from the plasma; and an insulated thermocouple junction provided in the metallic rod, the thermocouple junction configured to measure equilibrium temperature of the probe.

公开(公告)号：US20160181112A1

公开(公告)日：2016-06-23

申请号：US14581332

申请日：2014-12-23

Applicant: Applied Materials, Inc.

Inventor： Jun Xue ,  Ching-Mei Hsu ,  Zihui Li ,  Ludovic Godet ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3065 ,  H01L21/265

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32954 ,  H01L21/2236 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/311 ,  H01L21/31116 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/32137 ,  H01L21/32155 ,  H01L21/3223

Abstract: A method of anisotropically dry-etching exposed substrate material on a patterned substrate is described. The patterned substrate has a gap formed in a single material made from, for example, a silicon-containing material or a metal-containing material. The method includes directionally ion-implanting the patterned structure to implant the bottom of the gap without implanting substantially the walls of the gap. Subsequently, a remote plasma is formed using a fluorine-containing precursor to etch the patterned substrate such that either (1) the walls are selectively etched relative to the floor of the gap, or (2) the floor is selectively etched relative to the walls of the gap. Without ion implantation, the etch operation would be isotropic owing to the remote nature of the plasma excitation during the etch process.

Abstract translation: 描述了在图案化衬底上各向异性地干蚀刻暴露的衬底材料的方法。 图案化衬底具有由例如含硅材料或含金属材料制成的单一材料形成的间隙。 该方法包括定向离子注入图案化结构以植入间隙的底部，而基本上不插入间隙的壁。 随后，使用含氟前体形成远程等离子体以蚀刻图案化衬底，使得（1）相对于间隙的底板选择性地蚀刻壁，或者（2）相对于壁选择性地蚀刻地板 的差距。 在没有离子注入的情况下，蚀刻操作将是各向同性的，这是由于在蚀刻过程期间等离子体激发的远程特性。

公开(公告)号：US20140253092A1

公开(公告)日：2014-09-11

申请号：US14200318

申请日：2014-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Yub JEON ,  Jeong-Yun LEE ,  Chin-Wook CHUNG

IPC: G01N27/00

CPC classification number: H01J37/32954 ,  H01J37/32935

Abstract: To diagnose plasma in a plasma space, a plurality of floating probes are installed at a plurality of points, respectively, in a plasma space. An electron density ratio at each of the points is calculated by measuring a first probe current of each of the floating probes, the probe current including a DC component. A point ion density and a point electron temperature at each of the points are calculated by measuring a second probe current of each of the floating probes before the electron density ratio is calculated, the second probe current excluding the DC component.

Abstract translation: 为了在等离子体空间中诊断等离子体，分别在等离子体空间中的多个点处安装多个浮动探针。 通过测量每个浮动探针的第一探针电流，包括DC分量的探针电流来计算每个点处的电子密度比。 通过在计算电子密度比之前测量每个浮动探针的第二探针电流，除了直流分量之外的第二探针电流，计算每个点处的点离子密度和点电子温度。

公开(公告)号：US20080236748A1

公开(公告)日：2008-10-02

申请号：US11835449

申请日：2007-08-08

Applicant: HIROYUKI KOBAYASHI ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa

Inventor： HIROYUKI KOBAYASHI ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa

IPC: H01L21/306

CPC classification number: H01J37/32935 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32954 ,  H01J37/32972

Abstract: In a plasma processing apparatus including a processing chamber, a high-frequency power supply needed for plasma production, a unit that feeds a gas to the processing chamber, a shower plate, an exhausting unit that depressurizes the processing chamber, a stage on which a sample to be processed is placed, and a focus ring, the temperature of the focus ring can be regulated. A unit that measures a gas temperature distribution in the processing chamber is included. Based on the result of measurement of the gas temperature distribution, the temperature of the focus ring is controlled so that the gas temperature in the surface of the sample to be processed will be uniform.

Abstract translation: 在包括处理室，等离子体生产所需的高频电源，向处理室供给气体的单元，喷淋板，对处理室进行减压的排气单元的等离子体处理装置中， 放置待处理的样品和聚焦环，可以调节聚焦环的温度。 包括测量处理室中的气体温度分布的单元。 基于气体温度分布的测量结果，控制聚焦环的温度，使待处理样品的表面中的气体温度均匀。

公开(公告)号：US20060255260A1

公开(公告)日：2006-11-16

申请号：US10501558

申请日：2003-01-28

Applicant: Audunn Ludviksson

Inventor： Audunn Ludviksson

IPC: H01J49/00

CPC classification number: H01J37/32844 ,  C23C14/54 ,  C23C14/548 ,  C23C16/52 ,  H01J37/32623 ,  H01J37/32935 ,  H01J37/32954 ,  H01J37/32963 ,  H01J37/32972 ,  Y02C20/30

Abstract: A method and apparatus for real-time monitoring of a gaseous environment during a semiconductor process. The method utilizes metastable electronic energy transfer to excite and ionize the chamber gaseous effluent and correlates the fluorescence signals from the excited species and mass spectroscopy analysis of the ions generated with the process status. In addition to the ability to produce excited species that fluoresce, the method has the ability to generate molecular ions from labile compounds, reduce fragmentation and operate at higher pressures than conventional ionization methods.

Abstract translation: 一种在半导体工艺期间实时监测气体环境的方法和装置。 该方法利用亚稳态电子能量转移来激发和离子化室气态流出物，并将来自激发物质的荧光信号和与过程状态产生的离子的质谱分析相关联。 除了产生荧光物质的激发物质的能力外，该方法还具有从不稳定化合物产生分子离子的能力，减少碎片化并在比常规电离方法更高的压力下操作。

公开(公告)号：US5928532A

公开(公告)日：1999-07-27

申请号：US962736

申请日：1997-11-03

Applicant: Chishio Koshimizu ,  Susumu Saito

Inventor： Chishio Koshimizu ,  Susumu Saito

IPC: G01N21/68 ,  H01J37/32 ,  B23K10/00 ,  B44C1/22 ,  G01N21/00

CPC classification number: H01J37/32935 ,  G01N21/68 ,  H01J37/32954 ,  H01J37/32963

Abstract: When processing using a plasma is performed for an object to be processed, a photodetecting unit sequentially detects emission of two active species having specific wavelengths in a designated period during the processing. On the basis of the emission detection information of the two active species, two approximate expressions of linear functions are obtained in the relationship between the emission intensity and time. The ratio of the two approximate expressions of linear functions and the derivative of the ratio are obtained to form a graph in which the ratio is plotted on the abscissa, the derivative of the ratio is plotted on the ordinate, and the intersection between the average value of the ratio and the average value of the derivative of the ratio is the origin. The ratio and the derivative of the ratio are obtained by using the emission detection information of the two active species during the processing after the designated period. The end point of the plasma processing is determined when the position of the ratio and the derivative of the ratio thus obtained deviates from a predetermined region in the graph.

Abstract translation: 当对待处理对象进行使用等离子体的处理时，光检测单元依次检测在处理期间的指定期间内具有特定波长的两种活性物质的发射。 基于两种活性物质的发射检测信息，在发射强度和时间的关系中获得两个线性函数的近似表达式。 获得线性函数的两个近似表达式和比率导数之间的比率，以形成其中横坐标绘制比率的曲线图，该比率的导数绘制在纵坐标上，平均值之间的交点 的比率和该比率的导数的平均值是起源。 通过在指定时间段之后的处理期间使用两种活性物质的发射检测信息来获得该比率的比率和导数。 当比例的位置和由此获得的比率的导数偏离图中的预定区域时，确定等离子体处理的终点。

公开(公告)号：US20160218018A1

公开(公告)日：2016-07-28

申请号：US14607883

申请日：2015-01-28

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Vinod R. Purayath ,  Xikun Wang ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3213 ,  H01L27/115 ,  H01L21/8234

CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32954 ,  H01L21/32135 ,  H01L21/823437 ,  H01L27/11582

Abstract: Methods of selectively etching tungsten from the surface of a patterned substrate are described. The methods electrically separate vertically arranged tungsten slabs from one another as needed. The vertically arranged tungsten slabs may form the walls of a trench during manufacture of a vertical flash memory cell. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a remote plasma region. Process parameters are provided which result in uniform tungsten recess within the trench. A low electron temperature is maintained in the substrate processing region to achieve high etch selectivity and uniform removal throughout the trench.

Abstract translation: 描述了从图案化衬底的表面选择性地蚀刻钨的方法。 所述方法根据需要将垂直排列的钨板彼此电分离。 在垂直闪存单元的制造期间，垂直布置的钨板可以形成沟槽的壁。 钨蚀刻可以相对于诸如硅，多晶硅，氧化硅，氧化铝，氮化钛和氮化硅的膜选择性地去除钨。 这些方法包括将电短路钨板暴露于在远程等离子体区域中形成的远程激发的氟。 提供了在沟槽内产生均匀的钨凹槽的工艺参数。 在基板处理区域中保持低电子温度，以实现高蚀刻选择性并且在整个沟槽中均匀地去除。

公开(公告)号：US07880392B2

公开(公告)日：2011-02-01

申请号：US11586583

申请日：2006-10-26

Applicant: Kenji Kato ,  Hiroshige Deguchi ,  Hitoshi Yoneda ,  Kiyoshi Kubota ,  Akinori Ebe ,  Yuichi Setsuhara

Inventor： Kenji Kato ,  Hiroshige Deguchi ,  Hitoshi Yoneda ,  Kiyoshi Kubota ,  Akinori Ebe ,  Yuichi Setsuhara

IPC: C23C16/00

CPC classification number: H01J37/32954 ,  H01J37/321 ,  H01J37/32174

Abstract: Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.

Abstract translation: 等离子体制造方法和装置，其中多个高频天线布置在等离子体产生室中，并且从高频电源装置（包括电源，相位控制器等）提供的高频电力是 从天线施加到腔室中的气体以产生电感耦合等离子体。 多个高频天线中的至少一些以这样的并行布置的方式布置，使得天线彼此相邻并且每个天线与相邻天线相对。 高频电源装置控制施加到每个天线的高频电压的相位，从而控制感应耦合等离子体的电子温度。

公开(公告)号：US07355171B2

公开(公告)日：2008-04-08

申请号：US10501558

申请日：2003-01-28

Applicant: Audunn Ludviksson

Inventor： Audunn Ludviksson

IPC: H01J49/00 ,  H01J49/14

CPC classification number: H01J37/32844 ,  C23C14/54 ,  C23C14/548 ,  C23C16/52 ,  H01J37/32623 ,  H01J37/32935 ,  H01J37/32954 ,  H01J37/32963 ,  H01J37/32972 ,  Y02C20/30

Abstract: A method and apparatus for real-time monitoring of a gaseous environment during a semiconductor process. The method utilizes metastable electronic energy transfer to excite and ionize the chamber gaseous effluent and correlates the fluorescence signals from the excited species and mass spectroscopy analysis of the ions generated with the process status. In addition to the ability to produce excited species that fluoresce, the method has the ability to generate molecular ions from labile compounds, reduce fragmentation and operate at higher pressures than conventional ionization methods.

Abstract translation: 一种在半导体工艺期间实时监测气体环境的方法和装置。 该方法利用亚稳态电子能量转移来激发和离子化室气态流出物，并将来自激发物质的荧光信号和与过程状态产生的离子的质谱分析相关联。 除了产生荧光物质的激发物质的能力外，该方法还具有从不稳定化合物产生分子离子的能力，减少碎片化并在比常规电离方法更高的压力下操作。