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公开(公告)号：US08609303B2
公开(公告)日：2013-12-17
申请号：US13237651
申请日：2011-09-20
摘要： According to a mask pattern generating method of the embodiments, an undesired pattern, which is transferred onto a substrate due to an auxiliary pattern when an on-substrate pattern is formed on the substrate by using a mask pattern in which the auxiliary pattern is placed, is extracted as an undesired transfer pattern. Then, the mask pattern is corrected by changing a size of the auxiliary pattern according to a size and a position of the undesired transfer pattern.
摘要翻译： 根据实施例的掩模图案生成方法，当通过使用其中放置辅助图案的掩模图案在衬底上形成衬底上图案时，由于辅助图案而转移到衬底上的不需要的图案， 被提取为不期望的转移模式。 然后，通过根据不希望的转印图案的尺寸和位置改变辅助图案的尺寸来校正掩模图案。
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2.发明申请MASK PATTERN GENERATING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND COMPUTER PROGRAM PRODUCT 有权掩模图形生成方法，半导体器件的制造方法和计算机程序产品公开(公告)号：US20120183906A1
公开(公告)日：2012-07-19
申请号：US13237651
申请日：2011-09-20
摘要： According to a mask pattern generating method of the embodiments, an undesired pattern, which is transferred onto a substrate due to an auxiliary pattern when an on-substrate pattern is formed on the substrate by using a mask pattern in which the auxiliary pattern is placed, is extracted as an undesired transfer pattern. Then, the mask pattern is corrected by changing a size of the auxiliary pattern according to a size and a position of the undesired transfer pattern.
摘要翻译： 根据实施例的掩模图案生成方法，当通过使用其中放置辅助图案的掩模图案在衬底上形成衬底上图案时，由于辅助图案而转移到衬底上的不需要的图案， 被提取为不期望的转移模式。 然后，通过根据不希望的转印图案的尺寸和位置改变辅助图案的尺寸来校正掩模图案。
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