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公开(公告)号:US08228131B2
公开(公告)日:2012-07-24
申请号:US13005176
申请日:2011-01-12
申请人: Kei Nagatomo , Hisato Takeuchi , Shuuji Shibuya
发明人: Kei Nagatomo , Hisato Takeuchi , Shuuji Shibuya
IPC分类号: H03B5/32
摘要: In a crystal-oscillator circuit having a quartz crystal unit, further stabilization of output frequency change at a time of startup of the power supply is achieved. A crystal-oscillator circuit having a quartz crystal unit includes a first variable-capacitance element, which forms an oscillation loop with the quartz crystal unit, and a temperature compensation circuit which provides a first control signal for the first variable-capacitance element to compensate for a temperature characteristic of the quartz crystal unit. In addition, the crystal-oscillator circuit includes a second variable-capacitance element group, and a time constant circuit which provides a time constant signal, which changes with a predetermined time constant, for the second variable-capacitance element group as a second control signal.
摘要翻译: 在具有石英晶体单元的晶体振荡器电路中,实现了在电源启动时输出频率变化的进一步稳定。 具有石英晶体单元的晶体振荡器电路包括与石英晶体单元形成振荡环路的第一可变电容元件和温度补偿电路,该电路为第一可变电容元件提供第一控制信号以补偿 石英晶体单元的温度特性。 此外,晶体振荡器电路包括第二可变电容元件组和时间常数电路,其将作为第二控制信号的第二可变电容元件组提供以预定时间常数变化的时间常数信号 。
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公开(公告)号:US08063207B2
公开(公告)日:2011-11-22
申请号:US12237795
申请日:2008-09-25
CPC分类号: C07F15/0066
摘要: A molecular assembly comprising a host metal complex with a space formed therein, and compounds having substituents enclosed in the metal complex within the space and molecular chains bonded to the substituents and extending to the exterior of the metal complex, wherein two or more substituents are enclosed in the same space of the metal complex.
摘要翻译: 包含其中形成有空间的主体金属络合物的分子组合物,以及封闭在空间内的金属络合物中的取代基和与取代基键合并延伸至金属络合物外部的分子链的化合物,其中封闭了两个或多个取代基 在同一个空间的金属复合体。
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公开(公告)号:US07847645B2
公开(公告)日:2010-12-07
申请号:US12261544
申请日:2008-10-30
申请人: Hisato Takeuchi
发明人: Hisato Takeuchi
IPC分类号: H03L7/099
摘要: An oscillation control apparatus is provided with: an oscillating unit for oscillating an oscillating element; an output amplifying circuit having two pieces of same types of transistors series-connected to each other, for outputting a signal from a junction point between the two transistors in response to an oscillation signal outputted from the oscillating unit; a bias unit for generating two DC bias voltages having different levels from each other, which are applied to either respective gates or respective bases of the two transistors; a constant voltage power supply unit for applying a constant voltage to the oscillating unit; and an inverter unit provided between the oscillating unit and any one of either the gates or the bases of the two transistors, for inverting a phase of the oscillation signal outputted from the oscillating unit. Both the oscillation signal outputted from the oscillating unit and one of the two bias voltages are applied to either the gate or the base of one of the two transistors; and both an oscillation signal outputted from the oscillating unit and whose phase has been inverted by the inverting unit and the other bias voltage of the two bias voltages are applied to either the gate or the base of the other transistor of the two transistors.
摘要翻译: 振荡控制装置具有:振荡单元,用于振荡振荡元件; 一个输出放大电路,具有两个串联连接的相同类型的晶体管,用于响应于从振荡单元输出的振荡信号,从两个晶体管之间的连接点输出信号; 用于产生彼此具有不同电平的两个DC偏置电压的偏置单元,其被施加到两个晶体管的相应栅极或相应的基极; 用于向振荡单元施加恒定电压的恒压电源单元; 以及逆变器单元,设置在振荡单元与两个晶体管的栅极或基极中的任一个之间,用于反转从振荡单元输出的振荡信号的相位。 从振荡单元输出的振荡信号和两个偏置电压之一都施加到两个晶体管之一的栅极或基极上; 并且从振荡单元输出的相位已被反相单元反相的振荡信号和两个偏置电压的另一个偏置电压都施加到两个晶体管的另一晶体管的栅极或基极。
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公开(公告)号:US20090108950A1
公开(公告)日:2009-04-30
申请号:US12261544
申请日:2008-10-30
申请人: Hisato Takeuchi
发明人: Hisato Takeuchi
IPC分类号: H03L7/099
摘要: An oscillation control apparatus is provided with: an oscillating unit for oscillating an oscillating element; an output amplifying circuit having two pieces of same types of transistors series-connected to each other, for outputting a signal from a junction point between the two transistors in response to an oscillation signal outputted from the oscillating unit; a bias unit for generating two DC bias voltages having different levels from each other, which are applied to either respective gates or respective bases of the two transistors; a constant voltage power supply unit for applying a constant voltage to the oscillating unit; and an inverter unit provided between the oscillating unit and any one of either the gates or the bases of the two transistors, for inverting a phase of the oscillation signal outputted from the oscillating unit. Both the oscillation signal outputted from the oscillating unit and one of the two bias voltages are applied to either the gate or the base of one of the two transistors; and both an oscillation signal outputted from the oscillating unit and whose phase has been inverted by the inverting unit and the other bias voltage of the two bias voltages are applied to either the gate or the base of the other transistor of the two transistors.
摘要翻译: 振荡控制装置具有:振荡单元,用于振荡振荡元件; 一个输出放大电路,具有两个串联连接的相同类型的晶体管,用于响应于从振荡单元输出的振荡信号,从两个晶体管之间的连接点输出信号; 用于产生彼此具有不同电平的两个DC偏置电压的偏置单元,其被施加到两个晶体管的相应栅极或相应的基极; 用于向振荡单元施加恒定电压的恒压电源单元; 以及逆变器单元,设置在振荡单元与两个晶体管的栅极或基极中的任一个之间,用于反转从振荡单元输出的振荡信号的相位。 从振荡单元输出的振荡信号和两个偏置电压之一都施加到两个晶体管之一的栅极或基极上; 并且从振荡单元输出的相位已被反相单元反相的振荡信号和两个偏置电压的另一个偏置电压都施加到两个晶体管的另一晶体管的栅极或基极。
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公开(公告)号:US20090082563A1
公开(公告)日:2009-03-26
申请号:US12237795
申请日:2008-09-25
IPC分类号: C07F17/02
CPC分类号: C07F15/0066
摘要: A molecular assembly comprising a host metal complex with a space formed therein, and compounds having substituents enclosed in the metal complex within the space and molecular chains bonded to the substituents and extending to the exterior of the metal complex, wherein two or more substituents are enclosed in the same space of the metal complex.
摘要翻译: 包含其中形成有空间的主体金属络合物的分子组合物,以及封闭在空间内的金属络合物中的取代基和与取代基键合并延伸至金属络合物外部的分子链的化合物,其中封闭了两个或多个取代基 在同一个空间的金属复合体。
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公开(公告)号:US20080238561A1
公开(公告)日:2008-10-02
申请号:US12058231
申请日:2008-03-28
申请人: Takashi Otsuka , Hisato Takeuchi
发明人: Takashi Otsuka , Hisato Takeuchi
CPC分类号: H03B5/364
摘要: For a piezoelectric oscillator according to the present invention, an oscillator circuit includes: a piezoelectric vibrator; an NMOS transistor and a PMOS transistor that constitute an amplifier connected in parallel to the piezoelectric vibrator; and load capacitors connected in parallel to the piezoelectric vibrator. The gate terminals of the NMOS transistor and the PMOS transistor, which are constituents of the amplifier, are connected by a DC cut capacitor, and the gate terminal of the NMOS transistor and the output terminal of the amplifier are connected by a feedback resistor. An arbitrary bias voltage, to be applied to the gate terminal of the PMOS transistor via a high-frequency elimination resistor, is generated by a circuit provided by a diode-connected, second PMOS transistor.
摘要翻译: 对于根据本发明的压电振荡器,振荡器电路包括:压电振动器; 构成与压电振子并联连接的放大器的NMOS晶体管和PMOS晶体管; 并将负载电容并联连接到压电振动器。 作为放大器的组成部分的NMOS晶体管和PMOS晶体管的栅极端子由直流切断电容器连接,NMOS晶体管的栅极端子和放大器的输出端子通过反馈电阻器连接。 通过由二极管连接的第二PMOS晶体管提供的电路产生经由高频消除电阻施加到PMOS晶体管的栅极端子的任意偏置电压。
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公开(公告)号:US07230062B2
公开(公告)日:2007-06-12
申请号:US11054410
申请日:2005-02-10
申请人: Makoto Mouri , Hisato Takeuchi
发明人: Makoto Mouri , Hisato Takeuchi
IPC分类号: C08F220/10
CPC分类号: C08F220/26
摘要: An acrylic copolymer consisting of a first acrylic monomer represented by the following general formula (1): [where each of R1 and R2 represents an aliphatic hydrocarbon group whose main chain is composed of 3 or less carbon atoms, and each of R3 and R4 represents a hydrocarbon atom], and a second acrylic monomer represented by the following general formula (2): [where at least one of R5 and R6 represents an aliphatic hydrocarbon group whose main chain is composed of 4 to 60 carbon atoms, in the case where one of the R5 and R6 does not represent the aliphatic hydrocarbon group, it represents an aliphatic hydrocarbon group whose main chain is composed of 3 or less carbon atoms, and each of R7 and R8 represents a hydrogen atom], wherein the first acrylic monomer makes up 50 to 99 % of total monomer units in the copolymer.
摘要翻译: 由以下通式(1)表示的第一丙烯酸单体组成的丙烯酸共聚物:[其中R 1和R 2各自表示脂族烃基,其主链 由3个以下的碳原子构成,R 3和R 4中的每一个表示烃原子]和由以下通式(2)表示的第二丙烯酸类单体 ):[其中R 5和R 6中的至少一个表示主链由4至60个碳原子组成的脂族烃基,在以下情况之一的情况下: R 5和R 6不表示脂族烃基,它代表主链由3个或更少碳原子构成的脂族烃基,R < 7>和< 8< 8>表示氢原子],其中第一丙烯酸类单体占共聚物中总单体单元的50〜99%。
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公开(公告)号:US5942616A
公开(公告)日:1999-08-24
申请号:US633021
申请日:1996-04-16
申请人: Hisato Takeuchi , Azusa Tsukigase , Arimitsu Usuki
发明人: Hisato Takeuchi , Azusa Tsukigase , Arimitsu Usuki
IPC分类号: G02F1/19 , C07D471/04 , C07D471/14 , C07F1/00 , C07F15/02 , C07F15/04 , C09K3/00 , G02F1/00 , G02F1/17 , C07F1/08
CPC分类号: C07F15/025 , C07F1/005 , C07F15/045 , G02F1/0009 , G02F1/172
摘要: A metal ion coordinated complex crystal is composed of cation of a nitrogen-containing heterocyclic aromatic compound, anion of triiodine and metal ion. The complex crystal can be used as light-polarizing particles having a stable and strong polarizability which is resistant to ultra violet, an excellent heat resistance, excellent moisture resistance and excellent insolubility.
摘要翻译: 金属离子配位络合物结晶由含氮杂环芳香族化合物的阳离子,三碘系阴离子和金属离子构成。 复合晶体可以用作耐紫外线,耐热性,优异的耐湿性和优异的不溶性的稳定且强极化性的光偏振性粒子。
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公开(公告)号:US20080258830A1
公开(公告)日:2008-10-23
申请号:US12105879
申请日:2008-04-18
申请人: Hisato Takeuchi , Keigo Shingu , Kei Nagatomo
发明人: Hisato Takeuchi , Keigo Shingu , Kei Nagatomo
摘要: A temperature-compensated crystal oscillator includes a mode selector circuit 100, a control logic serial•interface 200, a PROM circuit 300, an oscillation control circuit 400 and an oscillation circuit 500, and has, as terminals, a power terminal (VCC/CLK) 11, an input terminal (VC/DATA/PE) 12, an output terminal (OUT) 13 and a ground terminal (GND) 14. The mode selector circuit 100 switches the crystal oscillator to an emulation mode when a first signal in which a power voltage and a clock signal supplied through the power terminal 11 are superimposed, is inputted from the power terminal and a second signal having a predetermined pattern is inputted from the input terminal 12.
摘要翻译: 温度补偿晶体振荡器包括模式选择器电路100,控制逻辑串行接口200,PROM电路300,振荡控制电路400和振荡电路500,并且具有作为终端的电源端子(VCC / CLK )11,输入端子(VC / DATA / PE)12,输出端子(OUT)13和接地端子(GND)14。 当从电源端子输入通过电源端子11提供的电源电压和提供的电源电压和时钟信号的第一信号时,模式选择器电路100将晶体振荡器切换到仿真模式,并且具有预定模式的第二信号是 从输入端子12输入。
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公开(公告)号:US20060225814A1
公开(公告)日:2006-10-12
申请号:US11401450
申请日:2006-04-11
申请人: Koki Mizuno , Hideki Matsuda , Seiji Kobayashi , Hisato Takeuchi , Katsunori Takada , Yutaka Kurebayashi
发明人: Koki Mizuno , Hideki Matsuda , Seiji Kobayashi , Hisato Takeuchi , Katsunori Takada , Yutaka Kurebayashi
IPC分类号: C23C8/32
摘要: A surface of a steel, as a material for a crankshaft, is nitrocarburized. The steel contains, as alloy elements C having a content 0.10 mass % or more 0.30 mass % or less, Si having a content 0.5 mass % or more and 0.3 mass % or less, Mn having a content 0.3 mass % or more and 1.5 mass % or less, Mo having a content 0.8 mass % or more and 2.0 mass % or less, Cr having a content 0.1 mass % or more and 1.0 mass % or less, and V having a content 0.1 mass % or more and 0.5 mass % or less, with a remainder consisting of Fe and inevitable impurities. The contents of the alloy elements fall within ranges: 2.0 mass %≦Mn+Cr+Mo≦3.0 mass %, 2.3 mass %≦C+Mo+5V ≦3.7 mass %, and 2.7 mass %≦2.16 Cr+Mo+2.54V≦4.0 mass %. If a steel sample extracted from a central portion of the nitrocarburized steel free from an influence of the nitrocarburizing treatment is austenitized at 1200° C. for one hour, and cooled to a room temperature so that a cooling rate at which the steel sample passes through a temperature range between 900° C. and 300° C. is 0.5° C./second, then an area percentage of a bainite structure in steel structures is 80% or more and a Vickers hardness measured at a cross section is 260 Hv or more and 330 Hv or less. A surface hardness of a nitrocarburized layer is 650 Hv or more, a formation depth of the nitrocarburized layer is 0.3 mm or more, and a hardness of the central portion is 340 Hv or more. Thereby a crankshaft which is excellent both in the machinability and in fatigue strength, even after nitrocarburizing treatment on the surface, is provided.
摘要翻译: 作为曲轴的材料的钢的表面被氮碳共渗。 钢含有含量为0.10质量%以上且0.30质量%以下的合金成分C,含有0.5质量%以上且0.3质量%以下的Si,含有0.3质量%以上且1.5质量%的Mn %以下,含量为0.8质量%以上且2.0质量%以下的Mo为0.1质量%以上且1.0质量%以下的Cr,含量为0.1质量%以上至0.5质量%的V以下, 或更少,余量由Fe和不可避免的杂质组成。 合金元素含量在2.0质量%<= Mn + Cr + Mo <= 3.0质量%,2.3质量%<= C + Mo + 5V≤3.3质量%,2.7质量%<= 2.16Cr的范围内 + Mo + 2.54V <= 4.0质量%。 如果不受氮碳共渗处理的影响,从氮碳共渗钢的中央部提取的钢样品在1200℃下奥氏体化1小时,冷却至室温,钢样品通过的冷却速度 在900℃至300℃之间的温度范围为0.5℃/秒,则钢结构中贝氏体组织的面积百分比为80%以上,横截面测得的维氏硬度为260Hv或 多达330 Hv以下。 氮碳共渗层的表面硬度为650Hv以上,氮覆层的形成深度为0.3mm以上,中央部的硬度为340Hv以上。 因此,即使在表面进行氮碳共渗处理之后,也提供了在机械加工性和疲劳强度方面优异的曲轴。
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