公开(公告)号：US08748865B2

公开(公告)日：2014-06-10

申请号：US13585481

申请日：2012-08-14

申请人： Jong Hak Won ,  Jong Ho Na ,  Jae In Yoon ,  Hoon ki Hong ,  Se Hwan Sim

发明人： Jong Hak Won ,  Jong Ho Na ,  Jae In Yoon ,  Hoon ki Hong ,  Se Hwan Sim

IPC分类号： H01L21/00 ,  H01L21/66

CPC分类号： H01L33/06 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer includes a first quantum well adjacent to the second conductive semiconductor layer, a second quantum well adjacent to the first quantum well, and a first quantum barrier between the first quantum well and the second quantum well. A recombination rate of electron-hole in the second quantum well is higher than the recombination rate of the electron-hole in the first quantum well, and the first quantum well has an energy level higher than the energy level of the second quantum well.

摘要翻译： 公开了发光器件，制造发光器件的方法，发光器件封装和照明系统。 发光器件包括第一导电半导体层; 包括量子阱和量子势垒的有源层，并设置在第一导电半导体层上; 以及在所述有源层上的第二导电半导体层。 有源层包括与第二导电半导体层相邻的第一量子阱，与第一量子阱相邻的第二量子阱以及第一量子阱和第二量子阱之间的第一量子势垒。 第二量子阱中电子空穴的复合速率高于第一量子阱中电子空穴的复合速率，第一量子阱的能级高于第二量子阱的能级。

公开(公告)号：US20130048944A1

公开(公告)日：2013-02-28

申请号：US13585481

申请日：2012-08-14

申请人： Jong Hak WON ,  Jong Ho Na ,  Jae In Yoon ,  Hoon Ki Hong ,  Se Hwan Sim

发明人： Jong Hak WON ,  Jong Ho Na ,  Jae In Yoon ,  Hoon Ki Hong ,  Se Hwan Sim

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer includes a first quantum well adjacent to the second conductive semiconductor layer, a second quantum well adjacent to the first quantum well, and a first quantum barrier between the first quantum well and the second quantum well. A recombination rate of electron-hole in the second quantum well is higher than the recombination rate of the electron-hole in the first quantum well, and the first quantum well has an energy level higher than the energy level of the second quantum well.

摘要翻译： 公开了发光器件，制造发光器件的方法，发光器件封装和照明系统。 发光器件包括第一导电半导体层; 包括量子阱和量子势垒的有源层，并设置在第一导电半导体层上; 以及在所述有源层上的第二导电半导体层。 有源层包括与第二导电半导体层相邻的第一量子阱，与第一量子阱相邻的第二量子阱以及第一量子阱和第二量子阱之间的第一量子势垒。 第二量子阱中电子空穴的复合速率高于第一量子阱中电子空穴的复合速率，第一量子阱的能级高于第二量子阱的能级。