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公开(公告)号:US08748865B2
公开(公告)日:2014-06-10
申请号:US13585481
申请日:2012-08-14
申请人: Jong Hak Won , Jong Ho Na , Jae In Yoon , Hoon ki Hong , Se Hwan Sim
发明人: Jong Hak Won , Jong Ho Na , Jae In Yoon , Hoon ki Hong , Se Hwan Sim
CPC分类号: H01L33/06 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要: Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer includes a first quantum well adjacent to the second conductive semiconductor layer, a second quantum well adjacent to the first quantum well, and a first quantum barrier between the first quantum well and the second quantum well. A recombination rate of electron-hole in the second quantum well is higher than the recombination rate of the electron-hole in the first quantum well, and the first quantum well has an energy level higher than the energy level of the second quantum well.
摘要翻译: 公开了发光器件,制造发光器件的方法,发光器件封装和照明系统。 发光器件包括第一导电半导体层; 包括量子阱和量子势垒的有源层,并设置在第一导电半导体层上; 以及在所述有源层上的第二导电半导体层。 有源层包括与第二导电半导体层相邻的第一量子阱,与第一量子阱相邻的第二量子阱以及第一量子阱和第二量子阱之间的第一量子势垒。 第二量子阱中电子空穴的复合速率高于第一量子阱中电子空穴的复合速率,第一量子阱的能级高于第二量子阱的能级。
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公开(公告)号:US20130048944A1
公开(公告)日:2013-02-28
申请号:US13585481
申请日:2012-08-14
申请人: Jong Hak WON , Jong Ho Na , Jae In Yoon , Hoon Ki Hong , Se Hwan Sim
发明人: Jong Hak WON , Jong Ho Na , Jae In Yoon , Hoon Ki Hong , Se Hwan Sim
IPC分类号: H01L33/04
CPC分类号: H01L33/06 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要: Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer includes a first quantum well adjacent to the second conductive semiconductor layer, a second quantum well adjacent to the first quantum well, and a first quantum barrier between the first quantum well and the second quantum well. A recombination rate of electron-hole in the second quantum well is higher than the recombination rate of the electron-hole in the first quantum well, and the first quantum well has an energy level higher than the energy level of the second quantum well.
摘要翻译: 公开了发光器件,制造发光器件的方法,发光器件封装和照明系统。 发光器件包括第一导电半导体层; 包括量子阱和量子势垒的有源层,并设置在第一导电半导体层上; 以及在所述有源层上的第二导电半导体层。 有源层包括与第二导电半导体层相邻的第一量子阱,与第一量子阱相邻的第二量子阱以及第一量子阱和第二量子阱之间的第一量子势垒。 第二量子阱中电子空穴的复合速率高于第一量子阱中电子空穴的复合速率,第一量子阱的能级高于第二量子阱的能级。
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公开(公告)号:US09029875B2
公开(公告)日:2015-05-12
申请号:US13429623
申请日:2012-03-26
申请人: Jong Ho Na , Se Hwan Sim , Chong Cook Kim , Jae In Yoon , Jong Pil Jeong , Jung Hyun Hwang , Dong Han Yoo
发明人: Jong Ho Na , Se Hwan Sim , Chong Cook Kim , Jae In Yoon , Jong Pil Jeong , Jung Hyun Hwang , Dong Han Yoo
CPC分类号: H01L33/06 , H01L33/007 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2924/0002 , H01L2924/12032 , H01L2924/00 , H01L2924/00014
摘要: Disclosed are a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer comprising a well layer and a barrier layer on the first conductive layer, and a second conductive semiconductor layer on the active layer. The well layer includes a first well layer closest to the first conductive semiconductor layer and having a first energy bandgap, a third well layer closest to the second conductive semiconductor layer and having a third energy bandgap, and a second well layer interposed between the first and third well layers and having a second energy bandgap. The third energy bandgap of the third well layer is greater than the second energy bandgap of the second well layer.
摘要翻译: 公开了一种发光器件,其制造方法,发光器件封装和照明系统。 发光器件包括第一导电半导体层,在第一导电层上包括阱层和阻挡层的有源层以及有源层上的第二导电半导体层。 阱层包括最靠近第一导电半导体层并且具有第一能带隙的第一阱层,最靠近第二导电半导体层的第三阱层并具有第三能带隙,以及插入在第一和第二阱层之间的第二阱层, 第三阱层并具有第二能带隙。 第三阱层的第三能带隙大于第二阱层的第二能带隙。
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公开(公告)号:US20120241770A1
公开(公告)日:2012-09-27
申请号:US13429623
申请日:2012-03-26
申请人: Jong Ho NA , Se Hwan Sim , Chong Cook Kim , Jae In Yoon , Jong Pil Jeong , Jung Hyun Hwang , Dong Han Yoo
发明人: Jong Ho NA , Se Hwan Sim , Chong Cook Kim , Jae In Yoon , Jong Pil Jeong , Jung Hyun Hwang , Dong Han Yoo
IPC分类号: H01L33/00
CPC分类号: H01L33/06 , H01L33/007 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2924/0002 , H01L2924/12032 , H01L2924/00 , H01L2924/00014
摘要: Disclosed are a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer comprising a well layer and a barrier layer on the first conductive layer, and a second conductive semiconductor layer on the active layer. The well layer includes a first well layer closest to the first conductive semiconductor layer and having a first energy bandgap, a third well layer closest to the second conductive semiconductor layer and having a third energy bandgap, and a second well layer interposed between the first and third well layers and having a second energy bandgap. The third energy bandgap of the third well layer is greater than the second energy bandgap of the second well layer.
摘要翻译: 公开了一种发光器件,其制造方法,发光器件封装和照明系统。 发光器件包括第一导电半导体层,在第一导电层上包括阱层和阻挡层的有源层以及有源层上的第二导电半导体层。 阱层包括最靠近第一导电半导体层并且具有第一能带隙的第一阱层,最靠近第二导电半导体层的第三阱层并具有第三能带隙,以及插入在第一和第二阱层之间的第二阱层, 第三阱层并具有第二能带隙。 第三阱层的第三能带隙大于第二阱层的第二能带隙。
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公开(公告)号:US20120187369A1
公开(公告)日:2012-07-26
申请号:US13359064
申请日:2012-01-26
申请人: Jong Pil Jeong , Jung Hyun Hwang , Sang Hyun Lee , Se Hwan Sim , Sung Yi Jung
发明人: Jong Pil Jeong , Jung Hyun Hwang , Sang Hyun Lee , Se Hwan Sim , Sung Yi Jung
IPC分类号: H01L33/04
CPC分类号: H01L33/12 , H01L33/04 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要: Provided are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a substrate, a first semiconductor layer containing indium (In) over the substrate, and a light emitting structure over the first semiconductor layer. A dislocation mode is disposed on a top surface of the first semiconductor layer.
摘要翻译: 提供了发光器件,制造发光器件的方法,发光器件封装和照明系统。 发光器件包括衬底,在衬底上包含铟(In)的第一半导体层和在第一半导体层上的发光结构。 位错模式设置在第一半导体层的顶表面上。
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公开(公告)号:US08748867B2
公开(公告)日:2014-06-10
申请号:US13359064
申请日:2012-01-26
申请人: Jong Pil Jeong , Jung Hyun Hwang , Sang Hyun Lee , Se Hwan Sim , Sung Yi Jung
发明人: Jong Pil Jeong , Jung Hyun Hwang , Sang Hyun Lee , Se Hwan Sim , Sung Yi Jung
IPC分类号: H01L29/06
CPC分类号: H01L33/12 , H01L33/04 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要: Provided are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a substrate, a first semiconductor layer containing indium (In) over the substrate, and a light emitting structure over the first semiconductor layer. A dislocation mode is disposed on a top surface of the first semiconductor layer.
摘要翻译: 提供了发光器件,制造发光器件的方法,发光器件封装和照明系统。 发光器件包括衬底,在衬底上包含铟(In)的第一半导体层和在第一半导体层上的发光结构。 位错模式设置在第一半导体层的顶表面上。
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