公开(公告)号：US06361929B1

公开(公告)日：2002-03-26

申请号：US09373755

申请日：1999-08-13

Applicant: Hsein-Ta Chung ,  Yi-Yu Hsu ,  Tong-Yu Chen ,  Tri-Rung Yew

Inventor： Hsein-Ta Chung ,  Yi-Yu Hsu ,  Tong-Yu Chen ,  Tri-Rung Yew

IPC: G03F736

CPC classification number: G03F7/427 ,  G03F7/42

Abstract: The present invention relates to a method of removing a photo-resist layer from a semiconductor wafer. The semiconductor wafer comprises an inter-metal dielectric layer (IMD), and a photo-resist layer positioned on the IMD. The method comprises performing a dry cleaning process by injecting a nitrogen-containing gas into an oxygen-free environment and utilizing a plasma reaction to remove most of the photo-resist layer, and performing a wet cleaning process to completely remove the photo-resist layer.

Abstract translation: 本发明涉及从半导体晶片去除光致抗蚀剂层的方法。 半导体晶片包括金属间介电层（IMD）和位于IMD上的光致抗蚀剂层。 该方法包括通过将含氮气体注入无氧环境并利用等离子体反应去除大部分光致抗蚀剂层进行干洗处理，并进行湿式清洗处理以完全除去光致抗蚀剂层 。