公开(公告)号：US20090146163A1

公开(公告)日：2009-06-11

申请号：US11951117

申请日：2007-12-05

Applicant: Hsiang-Ping CHENG ,  Chang-Yi Yang ,  Hou-Ren Wu

Inventor： Hsiang-Ping CHENG ,  Chang-Yi Yang ,  Hou-Ren Wu

IPC: H01L33/00

CPC classification number: H01L33/145 ,  H01L33/10 ,  H01L33/30

Abstract: The present invention discloses a high brightness LED structure, wherein a highly-doped n-type AlInP island structure is formed on a portion of the surface of an AlGaInP semiconductor stack structure and functions as a current barrier structure. The island structure is covered by a p-type window layer and positioned below a p-type ohmic electrode. The island structure can make more input current flow to the AlGaInP semiconductor stack structure not shielded by the light-emitting side electrode and thus can optimize the current distribution and promote the light-emitting efficiency.

Abstract translation: 本发明公开了一种高亮度LED结构，其中在AlGaInP半导体堆叠结构的一部分表面上形成高掺杂的n型AlInP岛结构，并用作电流势垒结构。 岛状结构由p型窗口层覆盖并位于p型欧姆电极之下。 岛结构可以使更多的输入电流流向不被发光侧电极屏蔽的AlGaInP半导体堆叠结构，从而可以优化电流分布并提高发光效率。

公开(公告)号：US20120043566A1

公开(公告)日：2012-02-23

申请号：US13213331

申请日：2011-08-19

Applicant: Hou-Jun Wu ,  Yu-Tsai Teng ,  Po-Hung Tsou ,  Hsiang-Ping Cheng ,  Jyh-Chiarng Wu

Inventor： Hou-Jun Wu ,  Yu-Tsai Teng ,  Po-Hung Tsou ,  Hsiang-Ping Cheng ,  Jyh-Chiarng Wu

IPC: H01L33/30 ,  H01L33/60

CPC classification number: H01L33/405 ,  H01L33/42

Abstract: A method for manufacturing the AlGaInP LED having a vertical structure is provided, including: growing, epitaxially, a buffer layer, an n-type contact layer, an n-type textured layer, a confined layer, an active layer, a p-type confined layer and a p-type window layer in that order on a temporary substrate, to form a texturable epitaxial layer; forming a transparent conducting film with periodicity on the p-type window layer of the epitaxial layer, forming a regulated through-hole on the transparent conducting film, and filling the through-hole with a conducting material; forming a total-reflection metal layer on the transparent conducting film; bonding a permanent substrate with the texturable epitaxial layer via a bonding layer, and bring the total-reflection metal layer into contact with the bonding layer; removing the temporary substrate and the buffer layer; forming an n-type extension electrode on the exposed n-type contact layer; removing the n-type contact layer, and forming a pad on the n-type textured layer; and forming a p-type electrode on a back of the permanent substrate. The transparent multilayered film with periodicity provides a greater reflectivity difference and hence brings better results than the conventional reflector consisting of single-layered, or, non-periodic, transparent films; and light-emitting efficiency is enhanced.

Abstract translation: 提供一种制造具有垂直结构的AlGaInP LED的方法，包括：生长外延，缓冲层，n型接触层，n型纹理层，约束层，有源层，p型 限制层和p型窗口层，以形成可纹理的外延层; 在外延层的p型窗口层上形成具有周期性的透明导电膜，在透明导电膜上形成调节通孔，并用导电材料填充通孔; 在透明导电膜上形成全反射金属层; 通过接合层将永久性基板与可纹理外延层接合，并使全反射金属层与接合层接触; 去除所述临时衬底和所述缓冲层; 在暴露的n型接触层上形成n型延伸电极; 去除n型接触层，以及在n型纹理层上形成衬垫; 以及在永久性基板的背面上形成p型电极。 具有周期性的透明多层膜提供更大的反射率差异，因此比由单层或非周期性透明膜构成的常规反射器带来更好的结果; 并且提高了发光效率。

公开(公告)号：US08552441B2

公开(公告)日：2013-10-08

申请号：US13213331

申请日：2011-08-19

Applicant: Hou-Jun Wu ,  Yu-Tsai Teng ,  Po-Hung Tsou ,  Hsiang-Ping Cheng ,  Jyh-Chiarng Wu

Inventor： Hou-Jun Wu ,  Yu-Tsai Teng ,  Po-Hung Tsou ,  Hsiang-Ping Cheng ,  Jyh-Chiarng Wu

IPC: H01L33/00

CPC classification number: H01L33/405 ,  H01L33/42

Abstract: A method for manufacturing the AlGaInP LED having a vertical structure is provided, including: growing, epitaxially, a buffer layer, an n-type contact layer, an n-type textured layer, a confined layer, an active layer, a p-type confined layer and a p-type window layer in that order on a temporary substrate, to form a texturable epitaxial layer; forming a transparent conducting film with periodicity on the p-type window layer of the epitaxial layer, forming a regulated through-hole on the transparent conducting film, and filling the through-hole with a conducting material; forming a total-reflection metal layer on the transparent conducting film; bonding a permanent substrate with the texturable epitaxial layer via a bonding layer, and bring the total-reflection metal layer into contact with the bonding layer; removing the temporary substrate and the buffer layer; forming an n-type extension electrode on the exposed n-type contact layer; removing the n-type contact layer, and forming a pad on the n-type textured layer; and forming a p-type electrode on a back of the permanent substrate. The transparent multilayered film with periodicity provides a greater reflectivity difference and hence brings better results than the conventional reflector consisting of single-layered, or, non-periodic, transparent films; and light-emitting efficiency is enhanced.

Abstract translation: 提供一种制造具有垂直结构的AlGaInP LED的方法，包括：生长外延，缓冲层，n型接触层，n型纹理层，约束层，有源层，p型 限制层和p型窗口层，以形成可纹理的外延层; 在外延层的p型窗口层上形成具有周期性的透明导电膜，在透明导电膜上形成调节通孔，并用导电材料填充通孔; 在透明导电膜上形成全反射金属层; 通过接合层将永久性基板与可纹理外延层接合，并使全反射金属层与接合层接触; 去除所述临时衬底和所述缓冲层; 在暴露的n型接触层上形成n型延伸电极; 去除n型接触层，以及在n型纹理层上形成衬垫; 以及在永久性基板的背面上形成p型电极。 具有周期性的透明多层膜提供更大的反射率差异，因此比由单层或非周期性透明膜构成的常规反射器带来更好的结果; 并且提高了发光效率。