公开(公告)号：US20130292718A1

公开(公告)日：2013-11-07

申请号：US13584512

申请日：2012-08-13

申请人： Chang Hsin Chu ,  Hsueh Lin Lee ,  Chih Kuei Hsu ,  Yuan Tze Chen

发明人： Chang Hsin Chu ,  Hsueh Lin Lee ,  Chih Kuei Hsu ,  Yuan Tze Chen

IPC分类号： H01L27/15 ,  H01L33/36

CPC分类号： H01L27/153 ,  H01L33/20 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting diode (LED) structure and a method for manufacturing the same. The LED structure comprises an insulating substrate, a plurality of LED chips and a plurality of interconnection layers. Each LED chip comprises a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer stacked in sequence on a surface of the insulating substrate. Each LED chip includes a mesa structure, an exposed portion of the first conductivity type semiconductor layer adjacent to the mesa structure, and a first isolation trench. The first isolation trench is disposed in the mesa structure. The interconnection layers respectively connect neighboring two of the LED chips.

摘要翻译： 发光二极管（LED）结构及其制造方法。 LED结构包括绝缘基板，多个LED芯片和多个互连层。 每个LED芯片包括依次堆叠在绝缘基板的表面上的第一导电类型半导体层，有源层和第二导电类型半导体层。 每个LED芯片包括台面结构，与台面结构相邻的第一导电类型半导体层的暴露部分和第一隔离沟槽。 第一隔离槽设置在台面结构中。 互连层分别连接相邻的两个LED芯片。