公开(公告)号：US20120137962A1

公开(公告)日：2012-06-07

申请号：US12960045

申请日：2010-12-03

申请人： Jyh-Chen Chen ,  Ying-Yang Teng ,  Chung-Wei Lu ,  Hsueh-I Chen

发明人： Jyh-Chen Chen ,  Ying-Yang Teng ,  Chung-Wei Lu ,  Hsueh-I Chen

IPC分类号： C30B11/00

CPC分类号： C30B28/06 ,  C30B11/006 ,  Y10T117/1024

摘要： The present invention relates to a gas supply device for use in a crystal-growing furnace. The gas supply device has an insulation layer enclosing a crucible, a gas inlet mounted in the insulation layer, and a gas exit formed in the insulation layer. A gas flow guide shield with an adjustable angle is disposed at the opening of the gas inlet, so that the free surface of the melt is blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality.

摘要翻译： 本发明涉及一种用于晶体生长炉中的气体供应装置。 气体供给装置具有封闭坩埚的绝缘层，安装在绝缘层中的气体入口和形成在绝缘层中的气体出口。 具有可调角度的气体流动导向屏蔽件设置在气体入口的开口处，使得熔体的自由表面被引导气流吹送，使得气流使杂质远离自由表面 有效率的。 结果，通过使熔体固化而获得的晶锭将显示出降低的杂质浓度和改善的晶体质量。

公开(公告)号：US08926751B2

公开(公告)日：2015-01-06

申请号：US12958469

申请日：2010-12-02

申请人： Jyh-Chen Chen ,  Ying-Yang Teng ,  Chung-Wei Lu ,  Hsueh-I Chen

发明人： Jyh-Chen Chen ,  Ying-Yang Teng ,  Chung-Wei Lu ,  Hsueh-I Chen

IPC分类号： C30B15/02 ,  C30B11/00 ,  C30B28/06

CPC分类号： C30B11/006 ,  C30B28/06 ,  Y10T117/108

摘要： The present invention relates to a gas flow guiding device for use in a crystal-growing furnace. The gas flow guiding device has an insulation layer enclosing a crucible, a gas inlet mounted in the upper insulation layer, and a gas exit formed in the lateral insulation layer. A plurality of guide plates are radially arranged around the opening of the gas inlet, so that the free surface of the melt is blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality.

摘要翻译： 本发明涉及一种用于晶体生长炉的气流引导装置。 气体流动引导装置具有包围坩埚的绝缘层，安装在上部绝缘层中的气体入口和形成在侧面绝缘层中的气体出口。 多个引导板围绕气体入口的开口径向布置，使得熔体的自由表面被引导气流吹送，使得气流使杂质从自由表面高效地离开。 结果，通过使熔体固化而获得的晶锭将显示出降低的杂质浓度和改善的晶体质量。

公开(公告)号：US20120137975A1

公开(公告)日：2012-06-07

申请号：US12958469

申请日：2010-12-02

申请人： Jyh-Chen Chen ,  Ying-Yang Teng ,  Chung-Wei Lu ,  Hsueh-I Chen

发明人： Jyh-Chen Chen ,  Ying-Yang Teng ,  Chung-Wei Lu ,  Hsueh-I Chen

IPC分类号： C23C16/455

CPC分类号： C30B11/006 ,  C30B28/06 ,  Y10T117/108

摘要： The present invention relates to a gas flow guiding device for use in a crystal-growing furnace. The gas flow guiding device has an insulation layer enclosing a crucible, a gas inlet mounted in the upper insulation layer, and a gas exit formed in the lateral insulation layer. A plurality of guide plates are radially arranged around the opening of the gas inlet, so that the free surface of the melt is blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality.

摘要翻译： 本发明涉及一种用于晶体生长炉的气流引导装置。 气体流动引导装置具有包围坩埚的绝缘层，安装在上部绝缘层中的气体入口和形成在侧面绝缘层中的气体出口。 多个引导板围绕气体入口的开口径向布置，使得熔体的自由表面被引导气流吹送，使得气流使杂质从自由表面高效地离开。 结果，通过使熔体固化而获得的晶锭将显示出降低的杂质浓度和改善的晶体质量。

公开(公告)号：US20120137976A1

公开(公告)日：2012-06-07

申请号：US12958475

申请日：2010-12-02

申请人： Jyh-Chen Chen ,  Ying-Yang Teng ,  Chung-Wei Lu ,  Hsueh-I Chen

发明人： Jyh-Chen Chen ,  Ying-Yang Teng ,  Chung-Wei Lu ,  Hsueh-I Chen

IPC分类号： C23C16/455

CPC分类号： C30B28/06 ,  C30B11/006

摘要： The present invention relates to a hot zone device for use in a crystal-growing furnace. The hot zone device has a gas inlet. The gas inlet is mounted in an insulation layer at a position above the crucible in a manner protruding into an interior of the crucible. The insulation layer is formed with a gas exit. The gas inlet is positioned such that the opening thereof is spaced apart from the free surface of the melt contained in the crucible by a distance substantially equal to or shorter than 10 cm, so as to allow the free surface of the melt to be blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality.

摘要翻译： 本发明涉及一种用于晶体生长炉的热区装置。 热区装置具有气体入口。 气体入口以突出到坩埚内部的方式安装在坩埚上方位置的绝缘层中。 绝缘层形成有气体出口。 气体入口被定位成使得其开口与坩埚中包含的熔体的自由表面间隔开大致等于或小于10cm的距离，从而允许熔体的自由表面被 引导气体流以这样一种方式使气流有效地将杂质从自由表面离开。 结果，通过使熔体固化而获得的晶锭将显示出降低的杂质浓度和改善的晶体质量。