公开(公告)号：US20220190135A1

公开(公告)日：2022-06-16

申请号：US17117337

申请日：2020-12-10

申请人： Roza Kotlyar ,  Stephanie A. Bojarski ,  Hubert C. George ,  Payam Amin ,  Patrick H. Keys ,  Ravi Pillarisetty ,  Roman Caudillo ,  Florian Luethi ,  James S. Clarke

发明人： Roza Kotlyar ,  Stephanie A. Bojarski ,  Hubert C. George ,  Payam Amin ,  Patrick H. Keys ,  Ravi Pillarisetty ,  Roman Caudillo ,  Florian Luethi ,  James S. Clarke

IPC分类号： H01L29/49 ,  H01L29/06 ,  H01L29/423 ,  H01L29/15 ,  G06N10/00

摘要： Disclosed herein are lateral gate material arrangements for quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; and a gate above the quantum well stack, wherein the gate includes a gate electrode, the gate electrode includes a first material proximate to side faces of the gate and a second material proximate to a center of the gate, and the first material has a different material composition than the second material.