公开(公告)号：US08476659B2

公开(公告)日：2013-07-02

申请号：US12837227

申请日：2010-07-15

申请人： Hsing-Kuo Hsia ,  Hung-Weng Huang ,  Ching-Hua Chiu ,  Gordon Kuo

发明人： Hsing-Kuo Hsia ,  Hung-Weng Huang ,  Ching-Hua Chiu ,  Gordon Kuo

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/0095 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44

摘要： The present disclosure relates to methods for performing wafer-level measurement and wafer-level binning of LED devices. The present disclosure also relates to methods for reducing thermal resistance of LED devices. The methods include growing epitaxial layers consisting of an n-doped layer, an active layer, and a p-doped layer on a wafer of a growth substrate. The method further includes forming p-contact and n-contact to the p-doped layer and the n-doped layer, respectively. The method further includes performing a wafer-level measurement of the LED by supplying power to the LED through the n-contact and the p-contact. The method further includes dicing the wafer to generate diced LED dies, bonding the diced LED dies to a chip substrate, and removing the growth substrate from the diced LED dies.

摘要翻译： 本公开涉及用于执行LED器件的晶片级测量和晶片级合并的方法。 本公开还涉及降低LED器件热阻的方法。 所述方法包括在生长衬底的晶片上生长由n掺杂层，有源层和p掺杂层组成的外延层。 该方法还包括分别与p掺杂层和n掺杂层形成p-接触和n-接触。 该方法还包括通过n接触和p接触向LED提供电力来执行LED的晶片级测量。 该方法还包括切割晶片以产生切割的LED管芯，将切割的LED管芯结合到芯片衬底，以及从切割的LED管芯移除生长衬底。