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    Light emitting device
    1.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08476659B2

    公开(公告)日：2013-07-02

    申请号：US12837227

    申请日：2010-07-15

    申请人： Hsing-Kuo Hsia ,  Hung-Weng Huang ,  Ching-Hua Chiu ,  Gordon Kuo

    发明人： Hsing-Kuo Hsia ,  Hung-Weng Huang ,  Ching-Hua Chiu ,  Gordon Kuo

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/0095 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44

    摘要： The present disclosure relates to methods for performing wafer-level measurement and wafer-level binning of LED devices. The present disclosure also relates to methods for reducing thermal resistance of LED devices. The methods include growing epitaxial layers consisting of an n-doped layer, an active layer, and a p-doped layer on a wafer of a growth substrate. The method further includes forming p-contact and n-contact to the p-doped layer and the n-doped layer, respectively. The method further includes performing a wafer-level measurement of the LED by supplying power to the LED through the n-contact and the p-contact. The method further includes dicing the wafer to generate diced LED dies, bonding the diced LED dies to a chip substrate, and removing the growth substrate from the diced LED dies.

    摘要翻译： 本公开涉及用于执行LED器件的晶片级测量和晶片级合并的方法。 本公开还涉及降低LED器件热阻的方法。 所述方法包括在生长衬底的晶片上生长由n掺杂层，有源层和p掺杂层组成的外延层。 该方法还包括分别与p掺杂层和n掺杂层形成p-接触和n-接触。 该方法还包括通过n接触和p接触向LED提供电力来执行LED的晶片级测量。 该方法还包括切割晶片以产生切割的LED管芯，将切割的LED管芯结合到芯片衬底，以及从切割的LED管芯移除生长衬底。

    LIGHT EMITTING DEVICE
    2.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20120012871A1

    公开(公告)日：2012-01-19

    申请号：US12837227

    申请日：2010-07-15

    申请人： Hsing-Kuo Hsia ,  Hung-Wen Huang ,  Ching-Hua Chiu ,  Gordon Kuo

    发明人： Hsing-Kuo Hsia ,  Hung-Wen Huang ,  Ching-Hua Chiu ,  Gordon Kuo

    IPC分类号： H01L33/10 ,  H01L21/66 ,  H01L21/50

    CPC分类号： H01L33/0095 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44

    摘要： The present disclosure relates to methods for performing wafer-level measurement and wafer-level binning of LED devices. The present disclosure also relates to methods for reducing thermal resistance of LED devices. The methods include growing epitaxial layers consisting of an n-doped layer, an active layer, and a p-doped layer on a wafer of a growth substrate. The method further includes forming p-contact and n-contact to the p-doped layer and the n-doped layer, respectively. The method further includes performing a wafer-level measurement of the LED by supplying power to the LED through the n-contact and the p-contact. The method further includes dicing the wafer to generate diced LED dies, bonding the diced LED dies to a chip substrate, and removing the growth substrate from the diced LED dies.

    摘要翻译： 本公开涉及用于执行LED器件的晶片级测量和晶片级合并的方法。 本公开还涉及降低LED器件热阻的方法。 所述方法包括在生长衬底的晶片上生长由n掺杂层，有源层和p掺杂层组成的外延层。 该方法还包括分别与p掺杂层和n掺杂层形成p-接触和n-接触。 该方法还包括通过n接触和p接触向LED提供电力来执行LED的晶片级测量。 该方法还包括切割晶片以产生切割的LED管芯，将切割的LED管芯结合到芯片衬底，以及从切割的LED管芯移除生长衬底。

    High efficiency light emitting diodes
    6.
    发明授权
    High efficiency light emitting diodes 有权
    高效率发光二极管

    公开(公告)号：US08618564B2

    公开(公告)日：2013-12-31

    申请号：US12898500

    申请日：2010-10-05

    申请人： Jung-Tang Chu ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    发明人： Jung-Tang Chu ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    IPC分类号： H01L33/20 ,  H01L33/46

    CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/46

    摘要： The present disclosure relates to high efficiency light emitting diode devices and methods for fabricating the same. In accordance with one or more embodiments, a light emitting diode device includes a substrate having one or more recessed features formed on a surface thereof and one or more omni-directional reflectors formed to overlie the one or more recessed features. A light emitting diode layer is formed on the surface of the substrate to overlie the omni-directional reflector. The one or more omni-directional reflectors are adapted to efficiently reflect light.

    摘要翻译： 本公开涉及高效率发光二极管器件及其制造方法。 根据一个或多个实施例，发光二极管器件包括具有形成在其表面上的一个或多个凹陷特征的基底和形成为覆盖一个或多个凹陷特征的一个或多个全向反射器。 在基板的表面上形成发光二极管层以覆盖全向反射器。 一个或多个全向反射器适于有效地反射光。

    Etching growth layers of light emitting devices to reduce leakage current
    7.
    发明授权
    Etching growth layers of light emitting devices to reduce leakage current 有权
    蚀刻生长层的发光器件，以减少漏电流

    公开(公告)号：US08592242B2

    公开(公告)日：2013-11-26

    申请号：US12949316

    申请日：2010-11-18

    申请人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    发明人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    IPC分类号： H01L21/00

    CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/20

    摘要： The present disclosure relates to methods for fabricating LEDs by patterning and etching an n-doped epitaxial layer to form regions of roughened surface of the n-doped layer and mesa structures adjacent to the roughened surface regions before depositing an active layer and the rest of the epitaxial layers on the mesa structures. The method includes growing epitaxial layers of an LED including an un-doped layer and an n-doped layer on a wafer of growth substrate. The method also includes patterning the n-doped layer to form a first region of the n-doped layer and a mesa region of the n-doped layer adjacent to the first region. The method further includes etching the first region of the n-doped layer to create a roughened surface. The method further includes growing additional epitaxial layers of the LED including an active layer and a p-doped layer on the mesa region of the n-doped layer.

    摘要翻译： 本公开涉及通过图案化和蚀刻n掺杂外延层来形成LED的方法，以在沉积有源层之前形成n掺杂层和邻近粗糙化表面区域的台面结构的粗糙表面的区域，并且其余部分 外延层在台面结构上。 该方法包括在生长衬底的晶片上生长包括未掺杂层和n掺杂层的LED的外延层。 该方法还包括图案化n掺杂层以形成n掺杂层的第一区域和与第一区域相邻的n掺杂层的台面区域。 该方法还包括蚀刻n掺杂层的第一区域以产生粗糙表面。 该方法还包括增加LED的附加外延层，其包括n掺杂层的台面区域上的有源层和p掺杂层。

    Method to remove sapphire substrate
    8.
    发明授权
    Method to remove sapphire substrate 有权
    去除蓝宝石衬底的方法

    公开(公告)号：US08563334B2

    公开(公告)日：2013-10-22

    申请号：US12881457

    申请日：2010-09-14

    申请人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    发明人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    IPC分类号： H01L21/3065 ,  H01L21/66 ,  H01L21/306

    CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/405

    摘要： A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first specified thickness using a single abrasive or multiple abrasives. The remaining sapphire substrate is removed by dry etching or wet etching.

    摘要翻译： 发光二极管（LED）形成在通过研磨然后蚀刻蓝宝石衬底而从LED除去的蓝宝石衬底上。 使用单一研磨剂或多个研磨剂将蓝宝石衬底首先研磨至第一指定厚度。 通过干蚀刻或湿法蚀刻去除剩余的蓝宝石衬底。