公开(公告)号：US06399509B1

公开(公告)日：2002-06-04

申请号：US09664426

申请日：2000-09-18

申请人： Hung-Yueh Lu ,  Ray C. Lee ,  Hong-Long Chang

发明人： Hung-Yueh Lu ,  Ray C. Lee ,  Hong-Long Chang

IPC分类号： H01L21302

CPC分类号： H01L21/02071 ,  H01L21/32136

摘要： A method of patterning a metal line and removing the polymer layer that forms on the metal lines sidewalls in an important post etch-polymer removal step (e.g., step 4). A semiconductor structure and an overlying dielectric layer, a first barrier layer, a metal layer; a second barrier layer and resist pattern are provided. A four step etch process is performed in sequence in the same etch chamber. In a first etch step (A), we etch through the second barrier layer using a B and Cl containing gas and a Cl containing gas in a reactive ion etch to form a first polymer layer over the sidewall of the second barrier layer. In a second etch step (B), the metal layer is etched exposing the first barrier layer to form a second polymer over the first polymer and the sidewall of the metal layer; the second etch step performed using a B and Cl containing gas and a Cl containing gas. In a third etch step (C), the first barrier layer is etched to form a third polymer layer over the first and second polymer layers. The third etch step is performed using a B and Cl containing gas and a Cl containing gas. In an important fourth etch step (D), we remove the first, second and third polymers; the fourth etch step performed using only chlorine containing gas (Cl2) gas and a fluorocarbon containing gas.

摘要翻译： 图案化金属线并去除在重要的后蚀刻 - 聚合物去除步骤（例如，步骤4）中在金属线侧壁上形成的聚合物层的方法。 半导体结构和上覆电介质层，第一阻挡层，金属层; 提供第二阻挡层和抗蚀剂图案。 在相同的蚀刻室中依次执行四步蚀刻工艺。 在第一蚀刻步骤（A）中，我们在反应离子蚀刻中使用含有B和Cl的气体和含Cl的气体蚀刻穿过第二阻挡层，以在第二阻挡层的侧壁上形成第一聚合物层。 在第二蚀刻步骤（B）中，金属层被蚀刻，暴露第一阻挡层以在第一聚合物和金属层的侧壁上形成第二聚合物; 使用含有B和Cl的气体和含Cl的气体进行第二蚀刻步骤。 在第三蚀刻步骤（C）中，蚀刻第一阻挡层以在第一和第二聚合物层上形成第三聚合物层。 使用含有B和Cl的气体和含Cl的气体进行第三蚀刻步骤。 在重要的第四蚀刻步骤（D）中，我们除去第一，第二和第三聚合物; 仅使用含氯气体（Cl2）气体和含碳氟化合物的气体进行第四蚀刻步骤。

公开(公告)号：US07344995B2

公开(公告)日：2008-03-18

申请号：US11078435

申请日：2005-03-14

申请人： Hung Yueh Lu ,  Hong Long Chang ,  Yung Kai Lee ,  Chih Hao Chang

发明人： Hung Yueh Lu ,  Hong Long Chang ,  Yung Kai Lee ,  Chih Hao Chang

IPC分类号： H01L21/302

CPC分类号： H01L21/32139 ,  H01L21/3086

摘要： The present invention discloses a method for preparing a structure with high aspect ratio, which can be a trench or a conductor. A first mask is formed on a substrate, and a first etching process is performed to remove the substrate uncovered by the first mask to form at least one concavity. A second mask is formed on the surface of the prepared structure, a second etching process is then performed to remove the second mask on the concavity, and a third etching process is performed subsequently to extend the depth of the concavity into the substrate. To prepare a conductor with high aspect ratio in the substrate, the first mask and the second mask are preferably made of dielectric material or metal. In addition, to prepare a trench with high aspect ratio in a silicon substrate, the first mask and the second mask are preferably made of dielectric material.

摘要翻译： 本发明公开了一种制备具有高纵横比的结构的方法，其可以是沟槽或导体。 在衬底上形成第一掩模，并且执行第一蚀刻工艺以移除由第一掩模未覆盖的衬底以形成至少一个凹部。 在制备的结构的表面上形成第二掩模，然后执行第二蚀刻工艺以去除凹部上的第二掩模，并且随后执行第三蚀刻工艺以将凹部的深度延伸到衬底中。 为了在衬底中制备具有高纵横比的导体，第一掩模和第二掩模优选由介电材料或金属制成。 此外，为了在硅衬底中制备具有高纵横比的沟槽，第一掩模和第二掩模优选由电介质材料制成。