公开(公告)号：US06500766B2

公开(公告)日：2002-12-31

申请号：US09832267

申请日：2001-04-11

申请人： Hungyueh Lu ,  Hong-Long Chang ,  Fang-Fei Liu

发明人： Hungyueh Lu ,  Hong-Long Chang ,  Fang-Fei Liu

IPC分类号： H01L21302

CPC分类号： H01L21/02054 ,  H01L21/02046 ,  Y10S438/906

摘要： A post-cleaning method of a via etching process for cleaning a wafer, the wafer having a tungsten (W) layer, an oxide layer covered on the tungsten layer, a photoresist layer patterned on the oxide layer, and a via passing through the photoresist layer and the oxide layer until a predetermined area of the tungsten layer is exposed, the cleaning method has the steps of: (a) performing a photoresist strip process to remove the photoresist layer; (b) performing a dry cleaning process which uses CF4 and N2H2 as the main reactive gas; and (c) performing a water-rinsing process.

公开(公告)号：US06526996B1

公开(公告)日：2003-03-04

申请号：US09591848

申请日：2000-06-12

申请人： Hong-Long Chang ,  Ming-Li Kung ,  Hungyueh Lu ,  Fang-Fei Liu

发明人： Hong-Long Chang ,  Ming-Li Kung ,  Hungyueh Lu ,  Fang-Fei Liu

IPC分类号： C25F500

CPC分类号： H01L21/02071 ,  H01L21/32136 ,  Y10S134/902 ,  Y10S438/906

摘要： A dry cleaning method for use in semiconductor fabrication, including the following steps. An etched metallization structure is provided and placed in a processing chamber. The etched metallization structure is cleaned by introducing a fluorine containing gas/oxygen containing gas mixture into the processing chamber proximate the etched metallization structure without the use of a downstream microwave while applying a magnetic field proximate the etched metallization structure and maintaining a pressure of less than about 50 millitorr within the processing chamber for a predetermined time.