公开(公告)号：US08965751B2

公开(公告)日：2015-02-24

申请号：US12916892

申请日：2010-11-01

申请人： Burra Gopal ,  Gaurav Doshi ,  Huy Q. Nguyen ,  Ovais Khan

发明人： Burra Gopal ,  Gaurav Doshi ,  Huy Q. Nguyen ,  Ovais Khan

IPC分类号： G06F17/28 ,  G10L15/00

CPC分类号： G06F17/289 ,  G06F17/3089

摘要： Multi-lingual translation for third party content feed applications is provided in social network and similar environments in an independent manner from the content feed. A copy of a content feed may be distributed to consumers via content feed channels of a social network or similar service with language specific views. Translation is performed post-content feed based on tagged format of the content feed translating language dependent text into a selected (or detected) language for a user and leaving language independent text in its original form. Support for new languages may be added or existing languages removed independent of the content feed.

摘要翻译： 用于第三方内容提要应用程序的多语言翻译在社交网络和类似环境中以独立的方式从内容提供中提供。 可以通过社交网络或具有语言特定视图的类似服务的内容馈送频道将内容馈送的副本分发给消费者。 基于内容馈送的标记格式，将语言相关文本转换为用户的选定（或检测）语言并且以其原始形式留下与语言无关的文本，进行翻译。 可以添加对新语言的支持，或删除独立于内容Feed的现有语言。

公开(公告)号：US08101906B2

公开(公告)日：2012-01-24

申请号：US12247468

申请日：2008-10-08

申请人： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

发明人： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

IPC分类号： G12B13/00

CPC分类号： H01J37/32972 ,  G01J3/28 ,  G01J3/443 ,  G01N21/274 ,  G01N21/66 ,  H01J37/32935 ,  H01J2237/2482

摘要： Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.

摘要翻译： 公开了使用校准光谱仪来匹配半导体处理室的方法。 在一个实施例中，测量参考室中的过程和老化室中的过程的等离子体属性。 通过使用校准光源，可以通过确定校正因子来比较与参考室中的光路相当的光路和老化室中的光路。 应用校正因子来调节通过老化室中的光路的等离子体辐射的测量强度。 将参考室中的等离子体辐射的测量强度与老化室中调整的测量强度进行比较，提供改变的室条件的指示。 可以使用两个强度之间的变化幅度来调整工艺参数，以从老化室产生与参考室相匹配的处理过的衬底。

公开(公告)号：US20100084544A1

公开(公告)日：2010-04-08

申请号：US12247468

申请日：2008-10-08

申请人： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

发明人： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

IPC分类号： G12B13/00

CPC分类号： H01J37/32972 ,  G01J3/28 ,  G01J3/443 ,  G01N21/274 ,  G01N21/66 ,  H01J37/32935 ,  H01J2237/2482

摘要： Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.

摘要翻译： 公开了使用校准光谱仪来匹配半导体处理室的方法。 在一个实施例中，测量参考室中的过程和老化室中的过程的等离子体属性。 通过使用校准光源，可以通过确定校正因子来比较与参考室中的光路相当的光路和老化室中的光路。 应用校正因子来调节通过老化室中的光路的等离子体辐射的测量强度。 将参考室中的等离子体辐射的测量强度与老化室中调整的测量强度进行比较，提供改变的室条件的指示。 可以使用两个强度之间的变化幅度来调整工艺参数，以从老化室产生与参考室相匹配的处理过的衬底。

公开(公告)号：US20120109631A1

公开(公告)日：2012-05-03

申请号：US12916892

申请日：2010-11-01

申请人： Burra Gopal ,  Gaurav Doshi ,  Huy Q. Nguyen ,  Ovais Khan

发明人： Burra Gopal ,  Gaurav Doshi ,  Huy Q. Nguyen ,  Ovais Khan

IPC分类号： G06F17/28 ,  G06F17/20

CPC分类号： G06F17/289 ,  G06F17/3089

摘要： Multi-lingual translation for third party content feed applications is provided in social network and similar environments in an independent manner from the content feed. A copy of a content feed may be distributed to consumers via content feed channels of a social network or similar service with language specific views. Translation is performed post-content feed based on tagged format of the content feed translating language dependent text into a selected (or detected) language for a user and leaving language independent text in its original form. Support for new languages may be added or existing languages removed independent of the content feed.

摘要翻译： 用于第三方内容提要应用程序的多语言翻译在社交网络和类似环境中以独立的方式从内容提供中提供。 可以通过社交网络或具有语言特定视图的类似服务的内容馈送频道将内容馈送的副本分发给消费者。 基于内容馈送的标记格式，将语言相关文本转换为用户的选定（或检测）语言并且以其原始形式留下与语言无关的文本，进行翻译。 可以添加对新语言的支持，或删除独立于内容Feed的现有语言。

公开(公告)号：US20120015455A1

公开(公告)日：2012-01-19

申请号：US13188866

申请日：2011-07-22

申请人： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

发明人： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

IPC分类号： H01L21/66 ,  H01L21/3065 ,  B05C11/00

CPC分类号： H01J37/32972 ,  G01J3/28 ,  G01J3/443 ,  G01N21/274 ,  G01N21/66 ,  H01J37/32935 ,  H01J2237/2482

摘要： Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.

摘要翻译： 公开了使用校准光谱仪来匹配半导体处理室的方法。 在一个实施例中，测量参考室中的过程和老化室中的过程的等离子体属性。 通过使用校准光源，可以通过确定校正因子来比较与参考室中的光路相当的光路和老化室中的光路。 应用校正因子来调节通过老化室中的光路的等离子体辐射的测量强度。 将参考室中的等离子体辐射的测量强度与老化室中调整的测量强度进行比较，提供改变的室条件的指示。 可以使用两个强度之间的变化幅度来调整工艺参数，以从老化室产生与参考室相匹配的处理过的衬底。

公开(公告)号：US09865438B2

公开(公告)日：2018-01-09

申请号：US13188866

申请日：2011-07-22

申请人： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

发明人： Sairaju Tallavarjula ,  Kailash Pradhan ,  Huy Q. Nguyen ,  Jian Li

IPC分类号： G12B13/00 ,  H01J37/32 ,  G01J3/28 ,  G01J3/443 ,  G01N21/27 ,  G01N21/66

CPC分类号： H01J37/32972 ,  G01J3/28 ,  G01J3/443 ,  G01N21/274 ,  G01N21/66 ,  H01J37/32935 ,  H01J2237/2482

摘要： Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.

公开(公告)号：US20110053336A1

公开(公告)日：2011-03-03

申请号：US12553261

申请日：2009-09-03

申请人： Kiuchul Hwang ,  David W. Bennett ,  Huy Q. Nguyen

发明人： Kiuchul Hwang ,  David W. Bennett ,  Huy Q. Nguyen

IPC分类号： H01L21/02

CPC分类号： H01L27/0629 ,  H01L21/8252 ,  H01L27/0605 ,  H01L28/40

摘要： A method for forming a capacitor and a transistor device on different surface portions of a semiconductor structure includes forming a passivation dielectric layer for the device; forming a bottom electrode for the capacitor; forming a removable layer extending over the bottom electrode and over the passivation dielectric layer with a window therein, such window exposing said bottom electrode; depositing a capacitor dielectric layer of the same or different material as the passivation dielectric layer over the removable layer with first portions passing through the window onto the exposed bottom electrode and second portions being over the removable layer, the thickness of the deposited layer being different from the thickness of the passivation layer; removing the removable layer with the second portions thereon while leaving said first portions on the bottom electrode; and forming a top electrode for the capacitor on the second portions remaining on the bottom electrode.

摘要翻译： 一种用于在半导体结构的不同表面部分上形成电容器和晶体管器件的方法包括形成用于器件的钝化介质层; 形成电容器的底部电极; 形成在所述底部电极上延伸并且在所述钝化介电层上方具有窗口的可移除层，所述窗口暴露所述底部电极; 在可移除层上沉积与钝化介电层相同或不同的材料的电容器电介质层，其中第一部分通过窗口穿过暴露的底部电极，第二部分在可移除层之上，沉积层的厚度不同于 钝化层的厚度; 在其上留下所述第一部分在底部电极上去除其上的第二部分的可移除层; 并且在残留在底部电极上的第二部分上形成用于电容器的顶部电极。