公开(公告)号：US06759714B2

公开(公告)日：2004-07-06

申请号：US10322232

申请日：2002-12-17

申请人： Sang Gi Kim ,  Dae Woo Lee ,  Tae Moon Roh ,  Yil Suk Yang ,  II-Young Park ,  Byoung-Gon Yu ,  Jong Dae Kim

发明人： Sang Gi Kim ,  Dae Woo Lee ,  Tae Moon Roh ,  Yil Suk Yang ,  II-Young Park ,  Byoung-Gon Yu ,  Jong Dae Kim

IPC分类号： H01L2972

CPC分类号： H01L21/76289 ,  H01L21/84 ,  H01L23/367 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor fabrication technology; and, more particularly, to a semiconductor device having a heat release structure that uses a silicon-on-insulator (SOI) substrate, and a method for fabricating the semiconductor device. The device and method of the present research provides a semiconductor device having a high heat-release structure and high heat-release structure, and a fabrication method thereof. In the research, the heat and high-frequency noises that are generated in the integrated circuit are released outside of the substrate through the tunneling region quickly by forming an integrated circuit on a silicon-on-insulator (SOI) substrate, aiid removing a buried insulation layer under the integrated circuit to form a tunneling region. The heat-release efficiency can be enhanced much more, when unevenness is formed on the surfaces of the upper and lower parts of the tunneling region, or when the air or other gases having excellent heat conductivity is flown into the tunneling region.

摘要翻译： 提供半导体制造技术; 更具体地说，涉及具有使用绝缘体上硅（SOI）衬底的散热结构的半导体器件，以及制造半导体器件的方法。 本研究的装置和方法提供了具有高散热结构和高放热结构的半导体器件及其制造方法。 在研究中，通过在绝缘体上硅（SOI）衬底上形成集成电路，快速地通过隧道区域在衬底外部释放集成电路中产生的热和高频噪声，除去埋入 集成电路下的绝缘层形成隧道区。 当在隧道区域的上部和下部的表面上形成不均匀时，或者当具有优良导热性的空气或其它气体流入隧道区域时，可以进一步提高散热效率。