公开(公告)号：US20070022943A1

公开(公告)日：2007-02-01

申请号：US11460408

申请日：2006-07-27

申请人： Young Ho Hong ,  Man Kwak ,  III-Soo Choi ,  Hyon-Jong Cho ,  Hong Lee

发明人： Young Ho Hong ,  Man Kwak ,  III-Soo Choi ,  Hyon-Jong Cho ,  Hong Lee

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B30/04 ,  C30B15/305 ,  C30B29/06 ,  Y10S117/917

摘要： A silicon single crystal ingot growing apparatus for growing a silicon single crystal ingot based on a Czochralski method The silicon single crystal ingot growing apparatus includes a chamber; a crucible provided in the chamber, and for containing a silicon melt; a heater provided at the outside of the crucible and for heating the silicon melt; a pulling unit for ascending a silicon single crystal grown from the silicon melt; and a plurality of magnetic members provided at the outside of the chamber and for asymmetrically applying a magnetic field to the silicon melt Such a structure can uniformly controls an oxygen concentration at a rear portion of a silicon single crystal ingot using asymmetric upper/lower magnetic fields without replacing a hot zone In addition, such a structure can controls a flower phenomenon generated on the growth of the single crystal by the asymmetric magnetic fields without a loss such as the additional hot zone (H/Z) replacement, P/S down, and SR variance.

摘要翻译： 一种用于生长基于切克劳斯基法的硅单晶锭的硅单晶锭生长装置。硅单晶锭生长装置包括：室; 设置在所述室中并用于容纳硅熔体的坩埚; 设置在坩埚外侧并用于加热硅熔体的加热器; 用于使从硅熔体生长的硅单晶上升的拉伸单元; 以及设置在室外的多个磁性部件，用于对硅熔体非对称地施加磁场。这种结构可以使用不对称的上/下磁场均匀地控制硅单晶锭后部的氧浓度 另外，这种结构也可以通过非对称磁场来控制单晶生长产生的花朵现象，而不会有额外的热区（H / Z）替换，P / S下降等损失， 和SR方差。