Multilingual character input device

    公开(公告)号:US10990192B2

    公开(公告)日:2021-04-27

    申请号:US16663103

    申请日:2019-10-24

    摘要: Disclosed is a multilingual character input device. The multilingual character input device comprising a keyboard unit for displaying character phonemes converted from characters per language in a software-selected country on a key and selectively receiving the input of the displayed character phonemes; a display unit for displaying the received input character on a display; a storage unit for storing character phonemes, a list of data and a program; and, a control unit for controlling the keyboard unit and the display unit, wherein, the keyboard unit comprises: a numeric/symbol keys section for displaying numbers and symbols disposed at an upper part; an F keys section disposed below the numeric/symbol keys section for displaying functions, characters or preset functions and plurality of F keys are addible; a character keys section disposed below the F keys section for displaying basic phonemes of each language, and; a plurality of additional keys in the character keys section for displaying variant phonemes or preset symbols, wherein if language conversion is performed through a language conversion key of the keyboard unit, a language exceeding the phoneme number of the character keys section is assigned to the F keys section and the plurality of additional keys so as to display all character phonemes, so that the input of the characters for each language is received by one key stroke.

    Character input apparatus
    4.
    发明授权

    公开(公告)号:US10739867B2

    公开(公告)日:2020-08-11

    申请号:US16332335

    申请日:2017-08-25

    摘要: The present invention relates to a character input apparatus comprising: a character input unit for inputting of a character and a character display unit for displaying the inputted character on a display. The character input apparatus consists of one or more character input units assembled by a unit of a character input, is divided into a language input unit for inputting an input of a language character and a miscellaneous input unit in terms of a function and divided into a right character input part, a left character input part, an upper character input part, a lower character input part, and a central character input part in terms of a layout allowing a simultaneous inputting of characters of two or more languages, and two or more language input units and one or more miscellaneous input units are at all times arranged in the character input unit and characters of a plurality of languages are at all times displayed in the character input unit to simultaneously input the characters of two or more languages without an operation of language conversion.

    Edge type dipole antenna structure and PCB including the same

    公开(公告)号:US10186781B2

    公开(公告)日:2019-01-22

    申请号:US14113042

    申请日:2012-05-29

    申请人: Gun-Hong Lee

    发明人: Gun-Hong Lee

    摘要: The present invention relates to printed circuit board (PCB) tracking technology, specifically to a dipole antenna structure for a radio frequency identification (RFID) tag. More specifically, the present invention relates to an edge type dipole antenna structure is implemented on an extremely small area on the edge of a ground plane provided on the PCB for various kinds of electronic products, and a PCB including the same.

    Non-volatile memory device and method for fabricating the same
    8.
    发明授权
    Non-volatile memory device and method for fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号:US09287283B2

    公开(公告)日:2016-03-15

    申请号:US13462082

    申请日:2012-05-02

    IPC分类号: H01L27/115

    摘要: A method for fabricating a non-volatile memory device includes alternately stacking a plurality of interlayer dielectric layers and a plurality of conductive layers over a substrate, etching the interlayer dielectric layers and the conductive layers to form a trench which exposes a surface of the substrate forming a first material layer over a resulting structure in which the trench is formed, forming a second material layer over the first material layer, removing portions of the second material layer and the first material layer formed on a bottom of the trench to expose the surface of the substrate, removing the second material layer, and burying a channel layer within the trench in which the second material layer is removed.

    摘要翻译: 一种用于制造非易失性存储器件的方法包括在衬底上交替堆叠多个层间电介质层和多个导电层,蚀刻层间电介质层和导电层以形成暴露衬底形成表面的沟槽 在其中形成沟槽的结果结构上的第一材料层,在第一材料层上形成第二材料层,去除第二材料层的部分和形成在沟槽的底部上的第一材料层,以暴露出 衬底,去除第二材料层,以及在去除第二材料层的沟槽内掩埋沟道层。

    Static random access memories having carbon nanotube thin films
    10.
    发明授权
    Static random access memories having carbon nanotube thin films 有权
    具有碳纳米管薄膜的静态随机存取存储器

    公开(公告)号:US08796667B2

    公开(公告)日:2014-08-05

    申请号:US12591773

    申请日:2009-12-01

    IPC分类号: H01L29/06

    摘要: A static random access memory (SRAM) includes: a first carbon nanotube (CNT) inverter, a second CNT inverter, a first switching transistor, and a second switching transistor. The first CNT inverter includes at least a first CNT transistor. The second CNT inverter is connected to the first CNT inverter and includes at least one second CNT transistor. The first switching transistor is connected to the first CNT inverter. The second switching transistor is connected to the second CNT inverter.

    摘要翻译: 静态随机存取存储器(SRAM)包括:第一碳纳米管(CNT)反相器,第二CNT反相器,第一开关晶体管和第二开关晶体管。 第一CNT反相器至少包括第一CNT晶体管。 第二CNT反相器连接到第一CNT反相器并且包括至少一个第二CNT晶体管。 第一开关晶体管连接到第一CNT逆变器。 第二开关晶体管连接到第二CNT反相器。