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1.发明授权Integrated circuit, intermediate structure and a method of fabricating a semiconductor structure 有权集成电路，中间结构和半导体结构的制造方法公开(公告)号：US07858514B2
公开(公告)日：2010-12-28
申请号：US11771558
申请日：2007-06-29
申请人： Ulrike Roessner , Daniel Koehler , Ilona Juergensen , Mirko Vogt
发明人： Ulrike Roessner , Daniel Koehler , Ilona Juergensen , Mirko Vogt
IPC分类号： H01L21/4763
CPC分类号： H01L23/485 , H01L21/31116 , H01L21/31144 , H01L21/76897 , H01L2924/0002 , H01L2924/00
摘要： In a method of fabricating a semiconductor structure, a carbon containing mask is fabricated over a dielectric layer. The mask exposes the surface of the dielectric layer at least partly in a region between two adjacent conducting lines. A contact hole is etched into the dielectric layer in the region between the two adjacent conducting lines.
摘要翻译： 在制造半导体结构的方法中，在电介质层上制造含碳掩模。 该掩模至少部分地在两个相邻的导线之间的区域中暴露介电层的表面。 在两个相邻的导线之间的区域中的介电层中蚀刻接触孔。
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2.发明申请Integrated Circuit, Intermediate Structure and a Method of Fabricating a Semiconductor Structure 有权集成电路，中间结构和制造半导体结构的方法公开(公告)号：US20090001595A1
公开(公告)日：2009-01-01
申请号：US11771558
申请日：2007-06-29
申请人： Ulrike Roessner , Daniel Koehler , Ilona Juergensen , Mirko Vogt
发明人： Ulrike Roessner , Daniel Koehler , Ilona Juergensen , Mirko Vogt
IPC分类号： H01L23/52 , H01L21/311 , H01L21/4763
CPC分类号： H01L23/485 , H01L21/31116 , H01L21/31144 , H01L21/76897 , H01L2924/0002 , H01L2924/00
摘要： In a method of fabricating a semiconductor structure, a carbon containing mask is fabricated over a dielectric layer. The mask exposes the surface of the dielectric layer at least partly in a region between two adjacent conducting lines. A contact hole is etched into the dielectric layer in the region between the two adjacent conducting lines.
摘要翻译： 在制造半导体结构的方法中，在电介质层上制造含碳掩模。 该掩模至少部分地在两个相邻的导线之间的区域中暴露介电层的表面。 在两个相邻的导线之间的区域中的介电层中蚀刻接触孔。
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