公开(公告)号：US08652274B2

公开(公告)日：2014-02-18

申请号：US13580954

申请日：2010-12-07

申请人： Dae Hyun Kim ,  Dong Woo Lee ,  In Dal Kim ,  Sang Young Choi ,  Ji Hoon Lee ,  Bo Min Jeon

发明人： Dae Hyun Kim ,  Dong Woo Lee ,  In Dal Kim ,  Sang Young Choi ,  Ji Hoon Lee ,  Bo Min Jeon

IPC分类号： C22C9/02 ,  C22F1/08

CPC分类号： C22C9/00 ,  C22C1/02 ,  C22F1/08

摘要： A copper alloy includes Si to facilitate deoxidation, and can be easily manufactured even when including elements such as Cr or Sn. The copper alloy has high conductivity and high workability without negatively affecting the tensile strength. The copper alloy contains 0.2 to 0.4 wt % of Cr, 0.05 to 0.15 wt % of Sn, 0.05 to 0.15 wt % of Zn, 0.01 to 0.30 wt % of Mg, 0.03 to 0.07 wt % of Si, with the remainder being Cu and inevitable impurities. A method for manufacturing the copper alloy includes obtaining a molten metal having the described composition; obtaining an ingot; heating the ingot at a temperature of 900-1000° C. to perform a hot rolling process; cold rolling; performing a first aging process at a temperature of 400-500° C. for 2 to 8 hours; cold rolling; and performing a second aging process at a temperature of 370-450° C. for 2 to 8 hours.

摘要翻译： 铜合金包括Si以促进脱氧，并且即使当包括诸如Cr或Sn的元素时也可以容易地制造。 铜合金具有高导电性和高加工性，而不会对拉伸强度产生不利影响。 铜合金含有0.2〜0.4重量％的Cr，0.05〜0.15重量％的Sn，0.05〜0.15重量％的Zn，0.01〜0.30重量％的Mg，0.03〜0.07重量％的Si，余量为Cu， 不可避免的杂质。 制造铜合金的方法包括获得具有所述组成的熔融金属; 获得锭; 在900-1000℃的温度下加热锭以进行热轧过程; 冷轧 在400-500℃的温度下进行第一次老化处理2至8小时; 冷轧 并在370-450℃的温度下进行2至8小时的第二时效处理。

公开(公告)号：US20120312431A1

公开(公告)日：2012-12-13

申请号：US13580954

申请日：2010-12-07

申请人： Dae Hyun Kim ,  Dong Woo Lee ,  In Dal Kim ,  Sang Young Choi ,  Ji Hoon Lee ,  Bo Min Jeon

发明人： Dae Hyun Kim ,  Dong Woo Lee ,  In Dal Kim ,  Sang Young Choi ,  Ji Hoon Lee ,  Bo Min Jeon

IPC分类号： C22F1/08 ,  C22C9/00 ,  C22C9/05 ,  C22C9/02 ,  C22C9/04

CPC分类号： C22C9/00 ,  C22C1/02 ,  C22F1/08

摘要： A copper alloy includes Si to facilitate deoxidation, and can be easily manufactured even when including elements such as Cr or Sn. The copper alloy has high conductivity and high workability without negatively affecting the tensile strength. The copper alloy consists of 0.2 to 0.4 wt % of Cr, 0.05 to 0.15 wt % of Sn, 0.05 to 0.15 wt % of Zn, 0.01 to 0.30 wt % of Mg, 0.03 to 0.07 wt % of Si, with the remainder being Cu and inevitable impurities. A method for manufacturing the copper alloy includes obtaining a molten metal having the described composition; obtaining an ingot; heating the ingot at a temperature of 900-1000° C. to perform a hot rolling process; cold rolling; performing a first aging process at a temperature of 400-500° C. for 2 to 8 hours; cold rolling; and performing a second aging process at a temperature of 370-450° C. for 2 to 8 hours.

摘要翻译： 铜合金包括Si以促进脱氧，并且即使当包括诸如Cr或Sn的元素时也可以容易地制造。 铜合金具有高导电性和高加工性，而不会对拉伸强度产生不利影响。 铜合金由0.2-0.4重量％的Cr，0.05〜0.15重量％的Sn，0.05〜0.15重量％的Zn，0.01〜0.30重量％的Mg，0.03〜0.07重量％的Si组成，余量为Cu 和不可避免的杂质。 制造铜合金的方法包括获得具有所述组成的熔融金属; 获得锭子 在900-1000℃的温度下加热锭以进行热轧过程; 冷轧 在400-500℃的温度下进行第一次老化处理2至8小时; 冷轧 并在370-450℃的温度下进行2至8小时的第二时效处理。

公开(公告)号：US20120240726A1

公开(公告)日：2012-09-27

申请号：US13513712

申请日：2010-07-20

申请人： Dae Hyun Kim ,  Dong Woo Lee ,  In Dal Kim ,  Sang Young Choi ,  Ji Hoon Lee ,  Bo Min Jeon

发明人： Dae Hyun Kim ,  Dong Woo Lee ,  In Dal Kim ,  Sang Young Choi ,  Ji Hoon Lee ,  Bo Min Jeon

IPC分类号： B22F1/00

CPC分类号： B22F9/12 ,  B22F1/0048 ,  B22F2998/10 ,  B22F2999/00 ,  C23C14/3414 ,  B22F9/04 ,  B22F2202/13

摘要： The present invention relates to a method of manufacturing a high purity copper (Cu) powder material useable in fabricating a sputtering target material for electronic industrial applications, for example a penetrator liner. The foregoing method has a configuration of using an apparatus composed of a raw material feeder, a plasma torch and a reactor to prepare a metal powder, and includes steps of passing a Cu powder having an average particle diameter of 30 to 450 μm through the thermal plasma torch at an introduction rate of 2 to 30 kg/hr. to thereby fabricate a Cu powder having an average particle diameter of 5 to 300 μm.

摘要翻译： 本发明涉及制造用于制造用于电子工业应用的溅射靶材料的高纯度铜（Cu）粉末材料的方法，例如穿透衬套。 上述方法具有使用由原料供给器，等离子体焰炬和反应器构成的装置来制备金属粉末的结构，并且包括使平均粒径为30〜450μm的Cu粉末通过热 等离子体焰炬，导入速率为2〜30 kg / hr。 从而制造平均粒径为5〜300μm的Cu粉末。

公开(公告)号：US5846346A

公开(公告)日：1998-12-08

申请号：US756358

申请日：1996-11-26

申请人： Dong Woo Lee ,  In Dal Kim

发明人： Dong Woo Lee ,  In Dal Kim

IPC分类号： B21B3/00 ,  C22C9/06 ,  C22F1/08 ,  H01B1/02 ,  C22C9/02

CPC分类号： H01B1/026 ,  C22C9/06 ,  B21B2003/005

摘要： This invention relates to a high strength, high electrical conductivity copper alloy having excellent mechanical and physical properties, including thermal softening resistance, in which precipitate particles are finely dispersed (growth of the precipitate is suppressed), and the production process. The alloy is the precipitation suppressed copper alloy consisted of 0.5.about.4.0 wt % nickel, 0.1.about.1.0 wt % silicon, 0.05.about.0.8 wt % tin (Sn) and balance copper and inevitable impurities, wherein sizes of precipitate particles are below 0.5 .mu.m. The production process includes the steps of melting and casting raw materials, surface machining and cold rolling of the ingot, subjecting the cold rolled ingot to a precipitation process at a temperature ranging 450.about.520 deg. C. for 5.about.12 hours, cold rolling the precipitation processed material, and subjecting the cold rolled material to a tension annealing process at a temperature ranging 350.about.550 deg. C. for below 90 seconds.

摘要翻译： 本发明涉及一种高精度，高导电性的铜合金，其具有优异的机械和物理性能，包括热稳定性，其中沉淀颗粒细分散（沉淀物的生长被抑制））和制备方法。 该合金是沉淀抑制铜合金，由0.5％的差异为4.0％的镍，0.1％的1.0％的硅，0.05％的0.8wt％的锡（Sn）和余量的铜和不可避免的杂质组成，其中沉淀颗粒的尺寸低于0.5μm 。 生产过程包括熔炼和铸造原料的步骤，锭的表面加工和冷轧，在450°F的温度下对冷轧锭进行沉淀过程。 C.对于5差12小时，冷沉淀处理的材料，并在350分贝550度的温度下对冷轧材料进行拉伸退火处理。 C.低于90秒。

公开(公告)号：US09061353B2

公开(公告)日：2015-06-23

申请号：US13513712

申请日：2010-07-20

申请人： Dae Hyun Kim ,  Dong Woo Lee ,  In Dal Kim ,  Sang Young Choi ,  Ji Hoon Lee ,  Bo Min Jeon

发明人： Dae Hyun Kim ,  Dong Woo Lee ,  In Dal Kim ,  Sang Young Choi ,  Ji Hoon Lee ,  Bo Min Jeon

IPC分类号： B22F9/14 ,  B22F9/12 ,  B22F1/00 ,  C23C14/34

CPC分类号： B22F9/12 ,  B22F1/0048 ,  B22F2998/10 ,  B22F2999/00 ,  C23C14/3414 ,  B22F9/04 ,  B22F2202/13

摘要： The present invention relates to a method of manufacturing a high purity copper (Cu) powder material useable in fabricating a sputtering target material for electronic industrial applications, for example a penetrator liner. The foregoing method has a configuration of using an apparatus composed of a raw material feeder, a plasma torch and a reactor to prepare a metal powder, and includes steps of passing a Cu powder having an average particle diameter of 30 to 450 μm through the thermal plasma torch at an introduction rate of 2 to 30 kg/hr, to thereby fabricate a Cu powder having an average particle diameter of 5 to 300 μm.

摘要翻译： 本发明涉及制造用于制造用于电子工业应用的溅射靶材料的高纯度铜（Cu）粉末材料的方法，例如穿透衬套。 上述方法具有使用由原料供给器，等离子体焰炬和反应器构成的装置来制备金属粉末的结构，并且包括使平均粒径为30〜450μm的Cu粉末通过热 等离子体焰炬，导入速度为2〜30kg / hr，由此制造平均粒径为5〜300μm的Cu粉末。

公开(公告)号：US20120312430A1

公开(公告)日：2012-12-13

申请号：US13577512

申请日：2010-10-28

申请人： Dae Hyun Kim ,  Dong Woo Lee ,  In Dal Kim ,  Sang Young Choi ,  Ji Hoon Lee ,  Bo Min Jeon

发明人： Dae Hyun Kim ,  Dong Woo Lee ,  In Dal Kim ,  Sang Young Choi ,  Ji Hoon Lee ,  Bo Min Jeon

IPC分类号： C22C9/00 ,  C22C9/01 ,  C22C9/04 ,  C22C9/06 ,  C22F1/08 ,  C22C9/02

CPC分类号： C22C9/00 ,  C22C9/10 ,  C22F1/08 ,  H01L23/49579 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a copper alloy having particular benefits for electronic parts and a method for making the same. The alloy having the composition of 0.05 wt % of Fe, 0.025˜0.15 wt % P, 0.01˜0.25 wt % Cr, 0.01˜0.15 wt %, Si 0.01˜0.25 wt % Mg, and the balance of Cu and minor impurities. The method of making the copper alloy includes: forming the molten alloy, casting to obtain an ingot, hot rolling the ingot at 850˜1,000° C., cooling, cold rolling the hot rolled product (after cooling the same), annealing the cold rolled product at 400˜600° C. for 1˜10 hours, intermediate rolling the annealed product with a reduction ratio of 30˜70%, heat treating the intermediate rolled product at 500˜800° C. for 30˜600 seconds, and finishing rolling the heat treated product with a reduction ratio of 20˜40%.

摘要翻译： 本发明涉及对电子部件具有特别益处的铜合金及其制造方法。 合金的组成为Fe的0.05重量％，P：0.025〜0.15重量％，Cr：0.01〜0.25重量％，0.01〜0.15重量％，Si：0.01〜0.25重量％的Mg，余量的Cu和微量的杂质。 制造铜合金的方法包括：形成熔融合金，铸造以获得锭，在850〜1000℃下热轧锭，冷却，冷轧热轧产品（冷却后），退火冷 轧制产品在400〜600℃下进行1〜10小时，对退火产物进行中间轧制，减压比为30〜70％，在500〜800℃下热处理30〜600秒， 以20〜40％的压下率对热处理产品进行精轧。