公开(公告)号：US4411755A

公开(公告)日：1983-10-25

申请号：US210716

申请日：1980-11-28

申请人： Irving P. Herman ,  Jack B. Marling

发明人： Irving P. Herman ,  Jack B. Marling

IPC分类号： B01D59/50 ,  G21C19/307 ,  B01D59/00

CPC分类号： G21C19/307 ,  B01D59/50

摘要： Methods for laser-assisted isotope separation of tritium, using infrared multiple photon dissociation of tritium-bearing products in the gas phase. One such process involves the steps of (1) catalytic exchange of a deuterium-bearing molecule XYD with tritiated water DTO from sources such as a heavy water fission reactor, to produce the tritium-bearing working molecules XYT and (2) photoselective dissociation of XYT to form a tritium-rich product. By an analogous procedure, tritium is separated from tritium-bearing materials that contain predominately hydrogen such as a light water coolant from fission or fusion reactors.

摘要翻译： 氚的激光辅助同位素分离方法，采用氚负离子产物在气相中的红外多光子解离。 一种这样的方法包括以下步骤：（1）从氚水裂解反应器等来源的氚化水DTO催化交换含氘分子XYD，以产生含氚的工作分子XYT和（2）XYT的光选离解 以形成富含氚的产物。 通过类似的方法，将氚与主要含有氢的氚承载材料分离，例如来自裂变或聚变反应堆的轻水冷却剂。

公开(公告)号：US20130228364A1

公开(公告)日：2013-09-05

申请号：US12198654

申请日：2008-08-26

申请人： Sarbajit Banerjee ,  Irving P. Herman

发明人： Sarbajit Banerjee ,  Irving P. Herman

IPC分类号： H05K1/02 ,  H05K1/03 ,  C25D13/00

CPC分类号： H05K1/02 ,  B81C3/007 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C25D13/00 ,  H01L51/0003 ,  H01L51/0012 ,  H01L51/0026 ,  H01L51/0048 ,  H01L51/0508 ,  H01L51/052 ,  H05K1/03

摘要： A method for positioning carbon nanotubes on a substrate, the substrate including a first electrode and a second electrode thereon, the second electrode being positioned oppositely from the first electrode; the method includes: applying a first AC voltage across the first and second electrodes; providing a first resistance in series with the first AC voltage; and introducing a solution including at least one carbon nanotube; wherein, when the first AC voltage is applied through the first resistance across the first and second electrodes, the at least one carbon nanotube attaches to the first and second electrodes. Another aspect of the invention includes providing a metallic area between the first and second electrodes. In an additional aspect of the invention, the substrate includes a third electrode and a fourth electrode thereon, the fourth electrode being positioned oppositely from the third electrode, the third electrode being positioned adjacent to the first electrode; the method further includes: removing the first AC voltage; applying a second AC voltage to the third and fourth electrodes, the second AC voltage causing the first and second electrodes to have a floating potential; and providing a second resistance in series with the second AC voltage; wherein when the first AC voltage is applied across the first and second electrodes, the first AC voltage causes the third and fourth electrodes to have a floating potential, and wherein, when the second AC voltage is applied through the second resistance across the third and fourth electrodes, a second carbon nanotube attaches to the third and fourth electrodes.

摘要翻译： 一种在基板上定位碳纳米管的方法，所述基板包括第一电极和第二电极，所述第二电极与所述第一电极相对设置; 该方法包括：跨第一和第二电极施加第一AC电压; 提供与第一AC电压串联的第一电阻; 并引入包含至少一种碳纳米管的溶液; 其中，当所述第一AC电压通过所述第一和第二电极穿过所述第一电阻施加时，所述至少一个碳纳米管附接到所述第一和第二电极。 本发明的另一方面包括在第一和第二电极之间提供金属区域。 在本发明的另一方面中，所述基板包括第三电极和第四电极，所述第四电极与所述第三电极相对地定位，所述第三电极邻近所述第一电极定位; 该方法还包括：去除第一AC电压; 对第三和第四电极施加第二AC电压，使得第一和第二电极具有浮置电位的第二AC电压; 并提供与所述第二AC电压串联的第二电阻; 其中当第一AC电压跨越第一和第二电极施加时，第一AC电压使得第三和第四电极具有浮置电位，并且其中当第二AC电压通过跨越第三和第四电极的第二电阻施加时 电极，第二碳纳米管附接到第三和第四电极。

公开(公告)号：US4257860A

公开(公告)日：1981-03-24

申请号：US943833

申请日：1978-09-19

申请人： John B. Marling ,  Irving P. Herman

发明人： John B. Marling ,  Irving P. Herman

IPC分类号： B01D59/34 ,  C01B4/00 ,  B01D59/00

CPC分类号： C01B4/00 ,  B01D59/34

摘要： A method for deuterium enrichment by photoinduced dissociation which uses as the deuterium source a multihalogenated organic compound selected from the group consisting of a dihalomethane, a trihalomethane, a 1,2-dihaloethene, a trihaloethene, a tetrahaloethane and a pentahaloethane. The multihalogenated organic compound is subjected to intense infrared radiation at a preselected wavelength to selectively excite and thereby induce dissociation of substantially only those molecules containing deuterium to provide a deuterium enriched dissociation product. The deuterium enriched product may be combusted with oxygen to provide deuterium enriched water. The deuterium depleted undissociated molecules may be redeuterated by treatment with a deuterium source such as water.

摘要翻译： 用于通过光诱导解离进行氘浓缩的方法，其使用选自二卤代甲烷，三卤代甲烷，1,2-二卤代乙烯，三卤代乙烯，四卤乙烷和五卤乙烷作为氘源的多卤化有机化合物。 多卤化有机化合物经受预选波长的强红外辐射以选择性地激发，从而基本上仅诱导含有氘的分子，从而提供富含氘的解离产物。 富氘产物可以与氧燃烧以提供富氘水。 通过用氘源（例如水）进行处理，氘缺乏的未解离的分子可以被重新氘化。

公开(公告)号：US07510638B2

公开(公告)日：2009-03-31

申请号：US10974406

申请日：2004-10-27

申请人： Irving P. Herman ,  Mohammad A. Islam

发明人： Irving P. Herman ,  Mohammad A. Islam

IPC分类号： C25D13/02

CPC分类号： B82Y30/00 ,  C25D5/18 ,  C25D15/00 ,  C25D21/12

摘要： The present invention is directed to a method for depositing unpatterned or selectively patterned nanoparticle films of controlled thickness on the respective film deposition surface of each of a pair of electrodes. In the present method, a pair of electrodes, each having a conducting film deposition surface, are immersed in a non-conducting nonpolar solvent in which nanoparticles, each having ligands attached thereto, are suspended. A voltage is applied to the pair of electrodes thereby causing films of the nanoparticles to deposit on the respective film deposition surface of each of the pair of electrodes. The nanoparticle films formed by the present method may be unpatterned or they may be patterned by patterning the conducting film deposition surface of at least one electrode of the pair of electrodes. The nanoparticle films formed according to the method of the present invention are useful as layers in electronic devices.

摘要翻译： 本发明涉及一种用于在一对电极中的每一个的各自的膜沉积表面上沉积受控厚度的未图案化或选择性图案化的纳米颗粒膜的方法。 在本方法中，将一对具有导电膜沉积表面的电极浸入其中悬浮有各自具有配体的纳米颗粒的非导电非极性溶剂中。 对一对电极施加电压，由此使纳米颗粒的膜沉积在该对电极中的每一个的各个成膜表面上。 通过本方法形成的纳米颗粒膜可以是未图案化的，或者可以通过图案化该对电极中的至少一个电极的导电膜沉积表面来图案化。 根据本发明的方法形成的纳米颗粒膜可用作电子器件中的层。