公开(公告)号：US6037588A

公开(公告)日：2000-03-14

申请号：US20505

申请日：1998-02-09

Applicant: Guo-Lin Liu ,  Hidetsugu Uchida ,  Izumi Aikawa ,  Naokatsu Ikegami ,  Norio Hirashita

Inventor： Guo-Lin Liu ,  Hidetsugu Uchida ,  Izumi Aikawa ,  Naokatsu Ikegami ,  Norio Hirashita

IPC: G01N23/225 ,  G01N27/62 ,  H01L21/66 ,  H01J37/29

CPC classification number: G01N23/2258 ,  H01J2237/2527

Abstract: In order to achieve a method for analyzing the compositional distribution of deposited film adhering to the internal surface of a contact hole having a diameter in the deep submicron order, primary ions 18 are radiated into the surface 12a of an insulating film 12 where the contact hole 14 is formed to generate secondary ions 20. The primary ions are radiated into the surface of the insulating film from a constant diagonal direction. Then, mass spectrometry is performed on the resulting secondary ions to detect the compositional distribution of the deposited film 16 formed at the internal surface of the contact hole. Thus, the compositional distribution of the deposited film is ascertained over the depth-wise direction of the contact hole.

Abstract translation: 为了实现分析附着在深亚微米级直径的接触孔的内表面的沉积膜的组成分布的方法，将一次离子18照射到绝缘膜12的表面12a中，其中接触孔 14形成以产生二次离子20.初级离子从恒定的对角线方向辐射到绝缘膜的表面中。 然后，对得到的二次离子进行质谱分析，以检测形成在接触孔的内表面的沉积膜16的组成分布。 因此，在接触孔的深度方向上确定沉积膜的组成分布。