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    Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from one or more previous metal etch steps
    1.
    发明授权
    Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from one or more previous metal etch steps 失效
    用于去除金属上的光致抗蚀剂的方法，其还去除或钝化从一个或多个先前的金属蚀刻步骤残留的腐蚀形成材料

    公开(公告)号：US5200031A

    公开(公告)日：1993-04-06

    申请号：US749764

    申请日：1991-08-26

    申请人： Ian S. Latchford ,  James Dillard

    发明人： Ian S. Latchford ,  James Dillard

    IPC分类号： G03F7/42 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

    CPC分类号： H01L21/02071 ,  G03F7/427 ,  H01L21/02046 ,  H01L21/31138

    摘要： A process is described for removing, from an integrated circuit structure, photoresist remaining after one or more metal etch steps which also removes or inactivates a sufficient amount of remaining chlorine-containing residues from the previous metal etch steps to inhibit corrosion of remaining metal for at least 24 hours. The process includes a first stripping step which comprises flowing NH.sub.3 gas through a microwave plasma generator into a stripping chamber which contains the integrated circuit structure while maintaining a plasma in the plasma generator. O.sub.2 gas (and optionally NH.sub.3 gas) is flowed through the plasma generator into the stripping chamber during a second step while maintaining the plasma in the plasma generator.

    摘要翻译： 描述了从集成电路结构去除在一个或多个金属蚀刻步骤之后残留的光致抗蚀剂的过程，其还去除或消除了来自先前的金属蚀刻步骤的足够量的剩余含氯残余物，以抑制剩余金属在 至少24小时。 该方法包括第一汽提步骤，其包括使NH 3气体通过微波等离子体发生器流入包含集成电路结构的汽提室，同时维持等离子体发生器中的等离子体。 在第二步骤期间，将气体（和任选的NH 3气体）流过等离子体发生器进入汽提室，同时保持等离子体在等离子体发生器中。