RADIATION BARRIER FOR CRYOGENIC WAFER TEST SYSTEM

    公开(公告)号:US20230003791A1

    公开(公告)日:2023-01-05

    申请号:US17366337

    申请日:2021-07-02

    IPC分类号: G01R31/28

    摘要: One example includes a cryogenic wafer test system. The system includes a first chamber that is cooled to a cryogenic temperature and a wafer chuck confined within the first chamber. The wafer chuck can be configured to accommodate a wafer device-under-test (DUT) comprising a plurality of superconducting die. The system also includes a second chamber that is held at a non-cryogenic temperature and which comprises a wafer chuck actuator system configured to provide at least one of translational and rotational motion of the wafer chuck via mechanical linkage interconnecting the wafer chuck and the wafer chuck actuator system. The system further includes a radiation barrier arranged between the first chamber and the second chamber and through which the mechanical linkage extends, the radiation barrier being configured to provide a thermal gradient between the cryogenic temperature of the first chamber and the non-cryogenic temperature of the second chamber.