公开(公告)号：US20220076932A1

公开(公告)日：2022-03-10

申请号：US17285558

申请日：2019-09-17

申请人： JSW AFTY Corporation

发明人： Masaru Shimada ,  Hironori Torii ,  Kozue Tanaka

IPC分类号： H01J37/32 ,  C23C14/50 ,  C23C14/35 ,  C23C14/54 ,  C23C14/34

摘要： A plasma film forming apparatus 1 includes: a vacuum chamber 2 in which a film forming process is performed to a substrate 4; a substrate holder 3 provided so as to be rotatable along a film forming surface 4a of the substrate 4; a rotating shaft 5 connected to the substrate holder 3; and a plasma generation unit 10 configured to generate a plasma 6 and provided such that an irradiation angle of the plasma 6 with respect to the rotating shaft 5 forms an acute angle. The apparatus further includes: a first driving unit 7 configured to move the substrate holder 3 in a vertical direction 11 parallel to the rotating shaft 5; a second driving unit 8 configured to move the substrate holder 3 in a horizontal direction 12 orthogonal to the rotating shaft 5; and a third driving unit 9 configured to rotate the rotating shaft 5, and the substrate holder 3 is moved independently in the vertical direction 11 and the horizontal direction 12.

公开(公告)号：US20230369034A1

公开(公告)日：2023-11-16

申请号：US18044887

申请日：2021-07-06

申请人： JSW AFTY Corporation

发明人： Hironori TORII

IPC分类号： H01J37/34 ,  C23C14/04 ,  C23C14/34

CPC分类号： H01J37/3441 ,  H01J37/3423 ,  C23C14/042 ,  C23C14/34 ,  H01J2237/332

摘要： A film forming apparatus 1 includes a target TA, a ring-shaped shield member 30 provided between the target TA and a plasma generation unit, and a ring-shaped shield member 40 provided between the target TA and a workpiece holding unit. The target TA includes a cylindrical target member 21 and a backing tube (supporting member) 20 configured to support the target member 21. Each of the shield member 30, the shield member 40, and the target member 21 is stacked in a Z direction around an axis VL1 as a central axis extending in the Z direction, each of the shield member 30, the target member 21, and the shield member 40 is arranged so as to be separated from each other in the Z direction, and an inner diameter D1 of the shield member 30 is smaller than an inner diameter D2 of the target member 21.

公开(公告)号：US12125690B2

公开(公告)日：2024-10-22

申请号：US17426881

申请日：2019-12-25

申请人： JSW AFTY Corporation

发明人： Hironori Torii ,  Kouji Kageyama

IPC分类号： H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3435 ,  C23C14/3407 ,  H01J37/3423

摘要： An object is to extend the life of the target member. The target (TA2) is designed to have a symmetrical structure so as to realize an invertible configuration. According to this, even if the consumption of the target member (71) is large on the side closer to the plasma generation unit where the plasma density is high, the portion of the target member (71) which has been located on the side closer to the film formation object where the plasma density is low and is thus consumed less can be rearranged on the side closer to the plasma generation unit where the plasma density is high, by inverting the target (TA2).

公开(公告)号：US20220102124A1

公开(公告)日：2022-03-31

申请号：US17426881

申请日：2019-12-25

申请人： JSW AFTY Corporation

发明人： Hironori Torii ,  Kouji Kageyama

IPC分类号： H01J37/34 ,  C23C14/34

摘要： An object is to extend the life of the target member. The target (TA2) is designed to have a symmetrical structure so as to realize an invertible configuration. According to this, even if the consumption of the target member (71) is large on the side closer to the plasma generation unit where the plasma density is high, the portion of the target member (71) which has been located on the side closer to the film formation object where the plasma density is low and is thus consumed less can be rearranged on the side closer to the plasma generation unit where the plasma density is high, by inverting the target (TA2).

公开(公告)号：US20160258063A1

公开(公告)日：2016-09-08

申请号：US15026942

申请日：2014-10-01

申请人： JSW AFTY CORPORATION

发明人： Keisuke WASHIO

IPC分类号： C23C16/455 ,  C23C16/52 ,  C23C16/44

CPC分类号： C23C16/45544 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/52 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/26

摘要： An atomic layer deposition apparatus that uniformly controls film thickness throughout an entire area of a substrate includes: a film formation container in which the substrate is disposed inside, the film formation container provided with a plurality of exhaust ports for discharging an internal gas, the plurality of exhaust ports arranged at intervals and arranged parallel to a surface of the substrate on which the thin film is formed; a source gas supply unit that supplies a source gas of the thin film into the film formation container; a reactive gas supply unit that supplies, into the film formation container, a reactive gas for forming the thin film in reaction with a component of the source gas adsorbed to the substrate; exhaust valves connected to the exhaust ports; and a control unit that controls the plurality of exhaust valves to control an exhaust volume from each of the exhaust ports.

摘要翻译： 在基板的整个区域上均匀地控制膜厚度的原子层沉积装置包括：成膜容器，其中基板设置在内部，成膜容器设置有用于排出内部气体的多个排气口，多个 的排气口间隔布置并且平行于形成有所述薄膜的所述基板的表面布置; 源气体供给单元，其将薄膜的源气体供给到成膜容器中; 反应性气体供给单元，其将与形成所述薄膜的反应性气体反应成与所述基板吸附的所述原料气成分反应的所述成膜容器; 排气阀连接到排气口; 以及控制单元，其控制所述多个排气门以从每个排气口控制排气量。