Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments
    3.
    发明授权
    Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments 失效
    结构实现热稳定的高灵敏度和线性范围的桥梁GMR传感器使用SAF磁性对准

    公开(公告)号:US06771472B1

    公开(公告)日:2004-08-03

    申请号:US10314458

    申请日:2002-12-06

    CPC classification number: B82Y25/00 G01R33/093 G11B5/3906

    Abstract: The invention provides a magnetic sensor having a first opposing pair and a second opposing pair of resistive elements configured in a Wheatstone bridge, wherein the resistive elements are a synthetic antiferromagnetic giant magnetoresistive sensor having a reference layer and a pinned layer of different thicknesses, wherein the first opposing pair has a net magnetic moment that is opposite to that of the second opposing pair, and wherein the first opposing pair has a thicker reference layer than pinned layer, and the second opposing pair has a thicker pinned layer than reference layer. Other embodiments of the invention have resistive elements that are opposingly bilayer and trilayer synthetic antiferromagnetic giant magnetoresistive sensors, or opposingly synthetic and standard antiferromagnetic giant magnetoresistive sensors.

    Abstract translation: 本发明提供一种磁传感器,其具有配置在惠斯通电桥中的第一相对对和第二相对对的电阻元件,其中电阻元件是具有参考层和不同厚度的钉扎层的合成反铁磁巨磁阻传感器,其中, 第一相对对具有与第二相对对相反的净磁矩,并且其中第一相对对具有比被钉扎层更厚的参考层,并且第二相对对具有比参考层更厚的钉扎层。 本发明的其它实施例具有相反的双层和三层合成反铁磁巨磁阻传感器或相反的合成和标准反铁磁巨磁阻传感器的电阻元件。

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